• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.866-870
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• 1993

For VO2-based sensors applicable to temperature measurements and optical disk materials by the nature of semiconductor to metal transition, the crystallinity and temperature vs. resistance characteristics were investigated as a function of the heat treatment temperature. The bead-type sensors were prepared through typical sensor fabrication processing and heat-treated at 40$0^{\circ}C$, 50$0^{\circ}C$, and $600^{\circ}C$, respectively, for 30 minutes in H2 gas atmosphere. As results of the temperature vs. resistance measurements, the electrical resistance in the phase transition range was decreased by 102 order for the VO2 sensor and by 103 order for the V71P11Sra18 system. It was estimated that the hysteresis, temperature vs. resistance, and current vs. voltage characteristics of the V71P11Sr18 system could be utilized for commericialization as a temperature sensor.

• Journal of Power System Engineering
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• v.17 no.5
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• pp.44-51
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• 2013

This paper proposes and analyzes recycling of optical phonons emitted by nonradiative decay, which is a major thermal management concern for high-power light emitting diodes (LED), by introducing an integrated, heterogeneous barrier cooling layer. The cooling is proportional to the number of phonons absorbed per electron overcoming the potential barrier, while the multi-phonon absorption rate is inversely proportional to this number. We address the theoretical treatment of photon-electron-phonon interaction/transport kinetics for optimal number of phonons (i.e., barrier height). We consider a GaN/InGaN LED with a metal/AlGaAs/GaAs/metal potential barrier and discuss the energy conversion rates. We find that significant amount of heat can be recycled by the barrier transition cooling layer.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.222.2-222.2
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• 2005

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.333-339
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• 1983

Semiconducting glaxe of iron system for the recent use as high Voltage porcelain insulators often showed the tendancy of unstable thermal properties. Thus the development of frit including magnetite was studied to cover the defect. In the experimental process melted and quenched frits were ground pelletized and heat-treated at various temperatures in the range of 800-1 $300^{\circ}C$ for various soaking time within 4 hours and then crystallized specimens were obtained. The speciment were studied with optical and electron microscope DTA x-ray diffractometer and electrometer The results obtained were as follows : 1) The optimum condition for the crystal growth of magnetite in the frite was the heat-treatment of $1300^{\circ}C$ for 3hrs and in this case the range of crystal size was $10-11\mu\textrm{m}$ 2) The activation energy for the crystal growth of magnetite was 21.1 kcal/mole. 3) The heat-treament at $1, 250^{\circ}C$ and $1, 300^{\circ}C$ resulted in the good thermal stability and the range of surface resistivity was $3.5{\times}10^4-4.0{\times}10^7$, /TEX> $\Omega$/$cm^2$ which was adguate to semiconducting frit. 4) The conduction mechanism seems to be due to the electron mobility rather than ion mobility and the activa-tion energy for the conduction was 0.07-0.15eV/mole for the heat-treated specimes in the range of 1, 250-1, 300C

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.6
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• pp.319-326
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• 2022

Direct extrusions of an aluminum 7075 alloy were carried out using 1500 ton machine with and without die cooling system. Cooling of extrusion die has been performed by the flow of liquid nitrogen and controlled by laser thermometer. Billet was 180 mm in diameter and 500 mm in length. The preheating temperatures of billet, container and die were 390℃, 400℃ and 450℃, respectively. Ram speed was kept with 1.25 mm/sec first. The change of ram speed was carried out during extrusion according to the observation of surface defects such as crack or tearing. Extrudates of 8.3 m in length, 100 mm in width and 15 mm in thickness were obtained to observe and analyze surface defects by optical microscopy and EBSD (Electron BackScattered Diffraction). In case of extrusion without die cooling cracks on the surface and tearing in the corner of extrudate occurred in the middle stage and developed in size and frequency during the late stage of extrusion. At the extrusion with die cooling the occurrence of defects could be suppressed on the most part of extrudate. EBSD micrographs showed that cracks and tearings have been resulted from the same origin. Surface defects were generated at the boundaries of grains formed by secondary recrystallization due to surface overheating during extrusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Nuclear Engineering and Technology
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• v.48 no.1
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• pp.259-267
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• 2016

Most manufacturing processes, including welding, create residual stresses. Residual stresses can reduce material strength and cause fractures. For estimating the reliability and aging of a welded structure, residual stresses should be evaluated as precisely as possible. Optical techniques such as holographic interferometry, electronic speckle pattern interferometry (ESPI), Moire interferometry, and shearography are noncontact means of measuring residual stresses. Among optical techniques, ESPI is typically used as a nondestructive measurement technique of in-plane displacement, such as stress and strain, and out-of-plane displacement, such as vibration and bending. In this study, ESPI was used to measure the residual stress on the welded part of butt-welded American Society for Testing and Materials (ASTM) A36 specimens with $CO_2$ welding. Four types of specimens, base metal specimen (BSP), tensile specimen including welded part (TSP), compression specimen including welded part (CSP), and annealed tensile specimen including welded part (ATSP), were tested. BSP was used to obtain the elastic modulus of a base metal. TSP and CSP were used to compare residual stresses under tensile and compressive loading conditions. ATSP was used to confirm the effect of heat treatment. Residual stresses on the welded parts of specimens were obtained from the phase map images obtained by ESPI. The results confirmed that residual stresses of welded parts can be measured by ESPI.

• Journal of the Korean Society for Precision Engineering
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• v.5 no.4
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• pp.48-58
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• 1988

This study was undertaken to observe the formation behavior of ferro- magnetic phase in Mn-Al-Cu Alloys. The alloy selected for this investigation was 70% Mn-29% Al-1% Cu. This pre-allyed pig was prepared to the cylinderical castings using an Induction furnace after homogenizing at $1100^{\circ}C$ for 2hr, the specimens were cooled by cooling methods. Subwequent isothermal heat treatments were followed at $550^{\circ}C$ for various periods of time at predetermined(1-1000min). The formation behavior of ferromagnetic phase was investigated by measurements of magnetic properties of the specimens at each stage of heat treatment, and optical microscopic esamination and X-Ray diffraction analyses were also employed. By this basic experimental results, the conclusions are as follows 1) In order to obtain much amount of ferromagnetic phase, the optimum average cooling rate was about 7.35-$16.4^{\circ}C$/sec($1100^{\circ}C$-$600^{\circ}C$). 2) We verified the decomposition of {\tau} phase to {\beta} -Mn and {\gamma} , as the specimens were homogenized at $1100^{\circ}C$ for 12hr, then heat-treased at $550^{\circ}C$ for 1-1000min. 3) A condition of optimum heat treatments in Mn-Al-Cu permanent mag-netic alloys showed that after homogenizing at $1100^{\circ}C$ for 2hr, the speciments were cooled in air or furnace(A) and subsequent heat treatments at $550^{\circ}C$ for 1-30min. The maximum magnetic properties were measured as follows: Air cooling; Br=1200(Gause), bHc=100(oe), (BH)max=0.07(MGOe) Furnace cooling(A);Br=950(Gauss), bhe=80(Oe), (BH)max=0.05(MGOe)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.