• 한국재료학회지
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• 제14권1호
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• 대한치과교정학회지
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• 제37권4호
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• pp.245-259
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• 2007

성장기 아동의 상악골 전방 견인을 이용한 치료 효과 중 하악골의 후하방 회전은 III급 골격관계를 개선시키지만 하안모의 길이가 길어져 face mask가 장안모 환자에게는 비적응증 이라는 것이 선학들의 일반적 견해였다. 그러나 실제로 하안모의 길이를 분류 기준으로 삼아 이에 따른 치료 효과를 비교한 연구는 부족한 실정이며 경조직 변화에 따른 연조직 변화의 연구 또한 미비하였다. 본 연구에서는 상악골 열성장을 보이는 성장기 골격성 III급 부정교합 환자 44명을 Ricketts의 lower facial height (LFH)기준에 따라 LFH가 정상 수치 이상인 군(1군)과 미만인 군(2군)으로 분류하여, 상악골 전방 견인 시 두 군간의 경조직, 연조직 치료 효과를 비교하고 경조직과 연조직의 상호 관계를 비교 분석하여 다음과 같은 결론을 얻었다. 상악의 경조직, 연조직 전방 이동량은 두 군간에 유의한 차이가 없었다. 하악의 경조직 후방이동량은 두 군간에 유의한 차이가 없었으나 연조직 후방이동량은 2군에서 더 크게 나타났다. 하안면의 경조직 수직 비율 변화는 두 군간에 유의한 차이가 없었으나 연조직 수직 비율 변화는 2군에서 더 크게 나타났다. 상악과 하악의 전후방적 경조직, 연조직 변화는 유의한 상관관계를 갖는 반면 수직적 하안면 비율 변화는 유의한 상관관계를 갖지 않았다. 위의 결과들을 고려해 볼 때 Face mask 사용 결과 상악골의 전방 이동과 하악골의 후하방회전이 일어났으며 하악의 연조직 후방 이동량은 단안모에서 더 크게 나타났다.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.44-47
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• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.48-52
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• 2019

Virtual metrology, which is one of APC techniques, is a method to predict characteristics of manufactured films using machine learning with saving time and resources. As the photoresist is no longer a mask material for use in high aspect ratios as the CD is reduced, hard mask is introduced to solve such problems. Among many types of hard mask materials, amorphous carbon layer(ACL) is widely investigated due to its advantages of high etch selectivity than conventional photoresist, high optical transmittance, easy deposition process, and removability by oxygen plasma. In this study, VM using different machine learning algorithms is applied to predict the thickness of ACL and trained models are evaluated which model shows best prediction performance. ACL specimens are deposited by plasma enhanced chemical vapor deposition(PECVD) with four different process parameters(Pressure, RF power, $C_3H_6$ gas flow, $N_2$ gas flow). Gradient boosting regression(GBR) algorithm, random forest regression(RFR) algorithm, and neural network(NN) are selected for modeling. The model using gradient boosting algorithm shows most proper performance with higher R-squared value. A model for predicting the thickness of the ACL film within the abovementioned conditions has been successfully constructed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.127-127
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• 2004

입자분사 가공(abrasive jet machining)은 과거에는 녹(rust) 도색(painting)의 제거 흑은 디버링(deburring), 표면 처리 등의 용도에 국한되어 사용되어졌다. 한편 최근 들어 반도체 제작공정이나 MEMS 공정 등에 적용되는 실리콘(silicon) 등의 세라믹 재료의 미세가공분야가 주목받고 있으며, 따라서 이와 관련된 많은 연구가 진행되고 있다. 한편, 세라믹 재료는 파괴인성이 매우 낮고 취성이 강하기 때문에 크랙발생 후 큰 응력이 연속적으로 주어지면 크랙은 음속으로 진행되어 파단 되는 특성이 있어서 일반적인 기계가공이 매우 어렵다.(중략)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• 한국염색가공학회지
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• 제29권1호
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• pp.45-54
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• 2017

Ultraviolet radiation have much influenced with a deep wrinkles, roughness, laxity of skin damage and pigmentation through oxidative stress and oxidative photo-damage. This study investigates the functional properties of hydrogel facial mask sheets made from agar, Styela clava tunics and Broussonetia papyrifera tunics. The skin of S. clava is covered with a hard cellulose containing glycoprotein, glycosaminoglycan and chondroitin sulfate. B. papyrifera is better known as Paper mulberry. It contains kazinol which serves as a tyrosinase inhibitor and skin whitening agent. The tensile strength of facial mask sheet was measured by universal testing machine, and the water absorption and moisture permeability of facial mask sheet were measured by dryer. Additionally, the DPPH assay and MTT assay were conducted for anti-oxidative activity and cytotoxicity of facial mask sheet. The whitening effect of the facial mask sheet was measured by tyrosinase inhibitor assay. These tests showed that the three ingredients are suitable cosmetic materials. The results reveal that they produce a high quality hydrogel facial mask sheet when the membrane contains 1%(W/V) of agar, 0.1%(W/V) of B. papyrifera tunics and 0.05%(W/V) of S. clava tunics.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.985-988
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• 2007

본 논문에서는 unsharp masking를 이용한 영상 개선 기법을 제안한다. 이 기법은 기존의 unsharp mask을 이용한 영상 개선을 어렵게 만드는 요인 중 하나인 인자를 자동으로 설정하여 이미지를 선명하게 만드는 기법이다. 기존의 세 인자인 Threshold, Amount, Radius를 자동으로 최적화하기 위해, 영상의 각 픽셀을 세 가지 그룹으로 분류하고, 그에 따라 unsharp mask의 적용 정도를 달리한다. 사람이 직접 인자를 입력하여 개선된 영상과 제안된 기법으로 개선된 영상의 비교를 통해 영상 개선 정도를 실험, 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.