• Journal of Magnetics
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• v.9 no.4
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• pp.97-100
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• 2004

In the present work exchange coupling between ultrathin Fe ($8{\AA}$) and Tb ($12{\AA}$) layers separated by Au spacer of varied thickness ($3-20{\AA}$) was studied. Anomalous Hall effect measurements showed weakly damped oscillating dependence of the Hall conductivity as a function of Au spacer thickness. Disagreement of the observed damping with the RKKY model of interlayer exchange coupling was explained by the influence of external magnetic field on the behaviour of exchange coupling oscillations. It was confirmed by Hall-like effect measurements at zero applied magnetic field and also illustrated by corresponding estimations.

• The Journal of the Acoustical Society of Korea
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• v.25 no.3E
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• pp.95-100
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• 2006

The present study presents the design procedures and the acoustic properties of the main hall of Ansan Cultural Arts Center in Korea which has opened in 2004. The acoustic design values are compared with the measured acoustic properties of the completed multi-purpose hall. Acoustic design criteria were suggested in the design stage through the 3-dimentional computer simulations. The acoustic parameters including SPL, RT, C80, $D_{50}$M, RASTI were measured in the hall after completed. Acoustic measurements were carried out in the 40 measurement points using MLS sound source signal in 4 different sound source points. The results show the even distribution of sound levels within the 2.0dB of difference among all seats. The reverberation time of 1.66sec was measured which is similar to the objective value of 1.65 sec in empty states. It was also found that average C80 values lie in the objective extents of C80 from -1 to 3dB and average D50 value of 54 was measured. Thus, it is concluded that the hall can be used as a multi-purpose hall with a suitable acoustic conditions.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• KIEAE Journal
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• v.10 no.3
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• pp.51-56
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• 2010

The sound insulation performance is one of the important factor that determined the amenity of housing life in residential building. Especially, Apartment house represents a korea habitation. So the importance of privacy and noise problems between habitable rooms are emphasized in these habitation. This study investigates and find a problem of sound insulation performance of partition wall of the apartment house in current state. The measurements were carried out in apartment house with and without a stair hall. And the measurements also carried out in current state and installing a sound absorbing material in receiving room and changing a front door and installing a inner door. In spite of the same partition wall, difference results were showed according to the stair hall. It is appeared that sound insulation performance without stair hall is 6-7dB(Dw) higher than that with stair hall. In case of without stair hall, sound insulation performance is Dw 49 for single number quantity for airbone sound. And In case of changing a front door and installing a inner door sound insulation performance is Dw 57 for single number quantity for airbone sound. The Results of measuring on the changes a front door and installed a inner door indicated that the flanking sound through front door influenced the sound insulation performance.

• KIEAE Journal
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• v.4 no.3
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• pp.179-186
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• 2004

The evaluation of the indoor environment of the Assembly Hall in the University, which is designed to be a large space, requires efficient design of its heating system that takes into consideration natural convection and the characteristics of the occupant's spaces. Indoor thermal environment was measured in the field and simulated with CFD code. The estimations of temperature distribution and indoor airflow distribution must be carried out simultaneously, as the thermal stratification is induced by natural convection flows. In order to simulate the even distribution of factors affecting the indoor environment, including temperature and airflow, Phoenics is used. The turbulent flow model adopted is the RNG k- model. The inlets and outlets of the air-conditioning systems, material and thermal properties, and the size of the test room ($35m{\times}18m{\times}10m$) are used for the simulation. Since the Assembly Hall is symmetric, half of the space is simulated. A Cartesian grid is used for calculation and the number of grids are respectively $60{\times}45{\times}35$. The results of the computer simulation during winter conditions are compared with the measurements at the typical points in the assembly hall with the heating system. After evaluating the results of the computer simulations, the methods of the heating system and layout are suggested.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1294-1303
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• 1988

Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

• Journal of Power Electronics
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• v.10 no.3
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• pp.300-305
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• 2010

This paper presents a two Hall sensor method for rotor angle detection in permanent magnet synchronous motors (PMSM). To minimize the implementation complexity, the system is designed to measure the edge field of permanent magnet pieces. However, there are nonlinearities in the measured values of the edge field. In this work, an angle correction algorithm is proposed, and the improvements in accuracy are verified through experiments. Finally, a field orientation controller is constructed with the proposed angle detection algorithm.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.44-47
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• 1994

High $T_{c}$ superconducting $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ thin film was grown up for c-axis orientation by epitaxial growth method on $LaAlO_{3}$ single crystal substrate. The crystal structures of this thin film were found to be c-axis orientation by X-ray diffraction patterns. Hall effect and resistivity measurements were made by van der Pauw method. Hall resistivity was calculated from the magnetoresistivity by considering thermomagnetic effect. The relation was $pH=p_{s}tan{\alpha}_{n}-QBT\frac{S_s}{K_s}$ The measured Hall resistivity and the calculated one are in good agreement each other.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.52-55
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• 1988

Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.453-456
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• 1998

The electrical properties of $Si_{1-x}Ge_{x}$ samples have been investigated. The sample structures were grown by MBE (molecular geam epitaxy) with Ge mole-fraction of x=0.0, x=0.05, x=0.1, and x=0.2. To examine the influence of the thermal processing, the $O_{2}$ and N$_{2}$ process were performed at 800[.deg. C] and 900[.deg. C], respectively. After this thermal process, hall measurements have been done over a wide range of the ambient temperature between 320[.deg. K] and 10[.deg. K] to find the temperature dependence using the comparessed-He gas system. The Ge-rich layer has been formed at the $SiO_{2}$/SiGe interface and it has an effect on the hall mobility. And it has been found that hall mobility was increased by the $N_{2}$ annealing process comparing with dry oxidation process at both 800[.deg.C] and900[.deg. C].