• Proceedings of the Korean Magnestics Society Conference
• /
• 2009.12a
• /
• pp.150-150
• /
• 2009

• Proceedings of the Korean Magnestics Society Conference
• /
• 2015.11a
• /
• pp.23-23
• /
• 2015

• Communications for Statistical Applications and Methods
• /
• v.15 no.2
• /
• pp.283-292
• /
• 2008

Smoothing parameter or bandwidth plays a key role in nonparametric classification based on kernel density estimation. We consider choosing smoothing parameter in nonparametric classification, which optimize the Bayes risk. Hall and Kang (2005) clarified the theoretical properties of smoothing parameter in terms of minimizing Bayes risk and derived the optimal order of it. Bootstrap method was used in their exploring numerical properties. We compare cross-validation and bootstrap method numerically in terms of optimal order of bandwidth. Effects on misclassification rate are also examined. We confirm that bootstrap method is superior to cross-validation in both cases.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.1
• /
• pp.7-13
• /
• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.298-305
• /
• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.12
• /
• pp.46-53
• /
• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.% $Al_{2}$O$_{3}$, 1.0 wt.% TiO$_{2}$, and 0.2 wt% v$_{2}$O$_{5}$ showed the highest surface carrier concentration of 5.952 * 10$^{20}$ cm$^{-3}$ , hall electron mobility of 176.7 cm$^{2}$/V.s, lowest electrical resistivity of 6*10$^{-5}$ .ohm.cm and highest sensitivity of 12. These results were measured at a working temperature of 300.deg. C to 8 ppm TMA gas.

• Computational Structural Engineering : An International Journal
• /
• v.1 no.1
• /
• pp.1-9
• /
• 2001

Collapse behavior of Mission-Gothic Undercrossing under Northridge earthquake is studied by performing nonlinear time-history analysis and three-dimensional nonlinear finite element method for flared columns. Bridge structural model is characterized as three-dimensional with consideration of columns, superstructures, and abutment conditions. Three components of ground motion, corresponding to bridge's longitudinal, transverse, and vertical direction and their combinations are used to investigate bridge collapse. Studies indicate that bridge collapse is dominantly caused by transverse ground motion and the consideration of three-dimensional ground motion leads to a more accurate assessment. Failure mechanism of flared columns is analyzed applying nonlinear finite element method. Reduction of column capacity is observed due to orientation of flare. Further investigation demonstrates that the effects of flare play an important role in predicting of bridge failure mechanism. Suggestions are offered to improve the performance of bridges during severe earthquake.

• Korean Institute of Interior Design Journal
• /
• v.20 no.5
• /
• pp.114-124
• /
• 2011

The development in modern world media made information expansion and conversion much easier. These changes in media environment required a lot of companies to quickly respond to the overall environment and come up with new appropriate marketing strategies. Companies use experiential exhibition halls to enhance their images. The goal of the research is to set the basis for digital signage exhibition production characteristics as a spatial mechanism by presenting the need to use the digital signage as a tool. Digital signage expands senses and connects internal and external space. There are many types of digital signage (display, projection, special media, etc) and they are informative, aesthetic, inductive, and amusing. For research methods, Korean companies' exhibition halls sample analysis and surveys were executed to analyze the awareness, expression characteristics, effects, and usage status of digital signage. In conclusion, corporate exhibition halls should: 1. be an interesting and comfortable space that can be used as a communication tool between the company and consumers 2. increase corporate potentials and faith by expanding human senses and inducing new experiences 3. continue to capture the interest of spectators through diversity.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.4
• /
• pp.181-185
• /
• 2014

We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a room-temperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and $600^{\circ}C$ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at $600^{\circ}C$ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at $600^{\circ}C$. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.4
• /
• pp.176-179
• /
• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.