• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Journal of Powder Materials
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• v.15 no.3
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• pp.214-220
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• 2008

In this study, consolidation behavior and hardness of commercially available molybdenum powder were investigated. In order to analyze compaction response of the powders, the elastoplastic constitutive equation based on the yield function by Shima and Oyane was applied to predict the compact density under uniaxial pressure from 100MPa to 700MPa. The compacts were sintered at $1400-1600^{\circ}C$ for 20-60 min. The sintered density and grain size of molybdenum were increased with increasing the compacting pressure and processing temperature and time. The constitutive equation, proposed by Kwon and Kim, was applied to simulate the creep densification rate and grain growth of molybdenum powder compacts. The calculated results were compared with experimental data for the powders. The effects of the porosity and grain size on the hardness of the specimens were explained based on the modified plasticity theory of porous material and Hall-Petch type equation.

• Journal of the Korean Society of Safety
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• v.17 no.2
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• pp.76-84
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• 2002

The seismic behaviors of steel moment connections with different structural characteristics are investigated. The rupture index, which represents the fracture potential, is adopted to study the effect of concrete slab and the relative strength between the coin the beam, and Panel zone on the ductility of connections. The results show that the presence of slab increases the beam strength, imposes constraint near the beam top flange, and consequently, induces concentrated deformation near the beam access hall, which reduces the ductility of the connection. The total deformation capacity of the connection depends not only on the beam but also on the column and panel zone. Therefore, the detrimental slab effects and the relative strength should be considered in the seismic design of the connection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.181-187
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• 1998

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• International Journal of Highway Engineering
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• v.8 no.2 s.28
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• pp.49-54
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• 2006

The purpose of this study was to determine the effect of expansion joint spacing (slab size) on the life cycle costs of owning Portland Cement Concrete (PCC) airfield pavements. Previous research has shown that slab size has a statistically significant impact on pavement performance. A probabilistic life cycle cost analysis was performed to determine if the effect of slab size on pavement performance would affect the total cost of ownership of PCC pavements. Data from 48 Pavement Condition Index (PCI) inspections of military and civilian airfields were used to develop probability-of-distress-by-condition curves, which were then used to develop probabilistic cost-of-repair-by-condition curves. A present worth life cycle cost analysis was then performed for various slab sizes, using construction costs, rehabilitation costs, and maintenance costs. Maintenance costs were determined by assuming a condition deterioration rate appropriate for each slab size and applying the cost-by-condition curves. The probabilistic cost-of-repair-by-condition curves indicated that smaller slabs are more expensive to repair on a unit cost basis. Life cycle cost analysis showed that larger slabs have a higher total cost of ownership than smaller slabs due to a faster rate of deterioration.

• KIEAE Journal
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• v.16 no.2
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• pp.5-10
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• 2016

Purpose: Recently, many public office buildings which were built by curtain wall increased rapidly, but the results of the investigation of the government, these buildings have been found that the heating and cooling thermal load is high, and showed low energy efficiency. Method: To evaluate the effects by applying outdoor louver and indoor blind, which can control solar radiation in order to reduce the heating and cooling load of public office building which was built by glass curtain wall. The heating and cooling load was calculated via Energyplus, building and outdoor louver, indoor blind were modeled by Google sketchup connected to Energyplus. Result: The results of this study were as follows; the case of applying various outdoor louver, the heating and cooling load all decreased as compared to the case without applying outdoor louver, the case of applying indoor blind, the heating and cooling load decreased as compared to the case without applying indoor blind, but indoor blind showed low energy performance comparing outdoor louver.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.