• 한국세라믹학회지
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• 제49권5호
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• pp.399-403
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• 2012

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• 한국분말재료학회지
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• 제19권4호
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• pp.285-290
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• 2012

The present study was focused on the analysis of the electric and thermal properties of spark plasma sintered $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric material. The crystal structure, microstructure, electric and thermal properties of the sintered body were evaluated by measuring XRD, SEM, electric resistivity, Hall effect and thermal conductivity. The $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic crystal structure. The c-axis of the $Bi_{0.5}Sb_{1.5}Te_3$ crystal aligned in a parallel direction with applied pressure during spark plasma sintering. The degree of the crystal alignment increased with increasing sintering temperature and sintering time. The electric resistivity and thermal conductivity of the $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic characteristics result from crystal alignment.

• 한국결정학회지
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• 제7권1호
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• pp.44-56
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• 1996

CuInTe2 다결정은 수평전기로에서 합성하고, CuInTe2 단결정은 수직 Bridgman 방법으로 성장하여 결정구조를 조사하고, Hall 효과를 30K에서 293K의 온도영역에서 측정하였다. CuInTe2 다결정 및 단결정은 정방정계였다. 다결정의 격자상수는 a=6.168Å, c=12.499Å 그리고 c/a=2.026이었고, 단결정의 격자상수는 a=6.186Å, c=12.453Å, 그리고 c/a=2.013이었다. CuInTe2 단결정의 성장면은 Laue 배면반사 사진으로부터 구하였으며 (112)면이었다. CuInTe2 단결정의 Hall 효과는 van der Pauw 방법으로 측정하였다. 상온에서 측정된 c축에 수직한 시료의 운반자농도 p는 2.14×1023holes/m3, 전기전도도 δ는 739.58Ω-1m-1 그리고 이동도 μ는 2.16×10 m2/V·s 이었다. c축에 평행한 시료의 운반자농도 p는 1.51×1023holes/m3, 전기전도도 σ는 717.55Ω-1m-1 그리고 이동도 μ는 2.97×10-2 m2/V·s이었다. c축에 수직 및 평행한 시료의 Hall계수가 양의 값이어서 CuInTe2 단결정은 p형 반도체임을 알 수 있었다.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.114-119
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• 2016

본 연구에서는 박테리아 셀룰로오스(BC)와 같은 천연고분자에 전도성 고분자 PEDOT:PEG와 graphene, 은나노와이어(AgNW)를 코팅하여 전도성을 부여하고자 하였다. 미리 PEDOT:PEG와 황산을 10~20%를 혼합하여 그 용액을 전자 스핀 코팅으로 BC 기판에 코팅하였다. 그 후, 전도성을 향상시키고자 graphene과 AgNW로 코팅하여 hall effect로 측정하였다. 그 결과, 대조군 PEDOT:PEG로 코팅한 BC 막의 전자농도($2.487{\times}10^{10}/cm^3$)에 비해 PEDOT:PEG에 황산을 10%로 혼합하여 코팅시킨 BC막($8.093{\times}10^{15}/cm^3$) 쪽이 $3.25{\times}10^5$배 높은 값을 나타내는 것으로 전도도가 대폭 향상되었음을 알 수 있었다. 또한, SEM분석으로 PEDOT:PEG가 황산처리에 의해 폴리머 형상으로 변화된 것을 확인 할 수 있었다. 분자구조의 변화를 FTIR분석결과 $1200cm^{-1}$ 파장의 S-O그룹이 황산처리 전에 비해 황산 혼합한 쪽에서 크게 상승된 것이 확인되었다. 이 방법을 이용하여 소량의 PEDOT:PEG사용으로 투명성을 확보할 수 있으며 미리 황산을 처리하는 것으로 제조공정을 단순하게 할 것으로 사료된다.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.138-139
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• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• 한국재료학회지
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• 제14권8호
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• pp.595-599
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• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

• Advances in materials Research
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• 제1권2호
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.