1 |
S. E. Kim and M. Oliver, "Structural, Electrical, and Optical Properties of Reactively Sputtered Thin Films," Met. Mater. Int., 16 [3] 441-46 (2010).
DOI
|
2 |
S. P. Kim, Y. Kim, S. D. Kim, and S. E. Kim, "The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering," J. Kor. Ceram. Soc., 48 [4] 316-22 (2011).
과학기술학회마을
DOI
|
3 |
H. D. Kim, J. S. Choi, and D. W. Shin, "Fabrication of the Conductive Fiber Coated Sb-doped Layer," J. Kor. Ceram. Soc., 39 [4] 386-93 (2002).
과학기술학회마을
DOI
|
4 |
W. Guo, L. Fu,Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, and H. T. Cao, "Microstructure, Optical, and Electrical Properties of p-type SnO Thin Films," Appl. Phys. Lett., 96 042113:1-3 (2010).
|
5 |
H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, "P-type Electrical Conduction in Transparent Thin Films of ," Nature, 389 [6654] 939-42 (1997).
DOI
ScienceOn
|
6 |
A. Kudo, H. Yanagi, H. Hosono, and H. Kawazoe, " : A p-type Conductive Oxide with Wide Band Gap," Appl. Phys. Lett., 73 [2] 220-22 (1998).
DOI
ScienceOn
|
7 |
B. G. Lewis and D.C. Paine, "Applications and Processing of Transparent Conducting Oxides," MRS Bull., 25 [8] 22-7 (2000).
DOI
|
8 |
J. Kim, B. Kim, S. Choi, J. Park, and J. Park, " Semiconducting Nanowires Network and Its Gas Sensor Application (in Korean)," Kor. J. Mater. Res., 20 [4] 223-27 (2010).
과학기술학회마을
DOI
|
9 |
M. Batzill and U. Diebold, "The Surface and Materials Science of Tin Oxide," Prog. Surf. Sci., 79 47-154 (2005).
DOI
ScienceOn
|
10 |
E. Marquezy, J. M. Gonzalez-Lealy, R. Jimenez-Garayy, S. R Lukicz, and D. M. Petrovicz, "Refractive-Index Dispersion and the Optical-Absorption Edge of Wedge-Shaped Thin Films of Metal-Chalcogenide Glasses," J. Phys. D: Appl. Phys., 30 690-702 (1997).
|
11 |
Y. Kim, J. H. Jang, J. S. Kim, S. D. Kim, and S. E. Kim, "Nitrogen Doped p-type SnO Thin Films Deposited via Sputtering," Mater. Sci. Eng. B, 177 1470-75 (2012).
DOI
|
12 |
W. Rzodkiewicz and A. Pana, "Determination of the Analytical Relationship between Refractive Index and Density of Layers," Acta Phys. Pol., 116 S92-S94 (2009).
DOI
|
13 |
Hamzaoui and M. Adnane, "Effects of Temperature and r.f. Power Sputtering on Electrical and Optical Properties of ," Appl. Energ., 65 19-28 (2000).
DOI
|
14 |
C. Suryanaraynara and M. G. Norton, X-ray diffraction -A Practical Approach; p.212, Plenum Press, New York, 1998.
|
15 |
D. Hwang, K. Bang, M. Jeong, and J. Myoung, "Effects of RF Power Variation on Properties of ZnO Thin Films and Electrical Properties of p-n Homojunction," J. Cryst. Growth, 254 449-55 (2003).
DOI
ScienceOn
|
16 |
L. Y. Liang, Z. M. Liu, H. T. Cao, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, "Phase and Optical Characterizations of Annealed SnO Thin Films and Their p-Type TFT Application," J. Electrochem. Soc., 157 [6] H598-H602 (2010).
DOI
ScienceOn
|
17 |
V. V. Kissine, S. A. Voroshilov, and V. V. Sysoev, "Oxygen Flow Effect on Gas Sensitivity Properties of Tin Oxide Film Prepared by R.F. Sputtering," Sens. Actuat. B, 55 55-9 (1999).
DOI
|
18 |
I. H. Kim, J. H. Ko, D. Kim, K. S. Lee, T. S. Lee, J. Jeong, B. Cheong, Y. J. Baik, and W. M. Kim, "Scattering Mechanism of Transparent Conducting Tin Oxide Films Prepared by Magnetron Sputtering," Thin Solid Films, 515 2475-80 (2006).
DOI
|
19 |
K. Vedam and P. Limsuwan, "Piezo- and Elasto-Optic Properties of Liquids under High Pressure. II. Refractive Index vs Density," J. Chem. Phys., 69 [11] 4772-78 (1978).
DOI
|
20 |
L.Y. Liang, Z.M. Liu, H.T. Cao, and X.Q. Pan, "Microstructural, Optical, and Electrical Properties of SnO Thin Films Prepared on Quartz via a Two-Step Method," Appl. Mater. Int., 2 [4] 1060-65 (2010).
DOI
|
21 |
K. Ellmer, "Magnetron Sputtering of Transparent Conductive Zinc Oxide: Relation between the Sputtering Parameters and the Electronic Properties," J. Phys. D: Appl. Phys., 33 [4] R17-R32 (2000).
DOI
ScienceOn
|
22 |
S. H. Park, J. H. Kang, and K. S. Yoo, "Fabrication of the Thin Film Gas Sensors using an RF Magnetron Sputtering Method and Their Alcohol Gas-Sensing Characterization," J. Kor. Sens. Soc., 14 [2] 63-8 (2005).
|
23 |
Y.M. Lu, W.S. Hwang, W.Y. Liu, and J.S. Yang, "Effect of RF Power on Optical and Electrical Properties of ZnO Thin Film by Magnetron Sputtering," Mater. Chem. Phys., 72 269-72S (2001).
DOI
ScienceOn
|
24 |
A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated Temperature Modulation Epitaxy for p-type Doping and Light- Emitting Diode Based on ZnO," Nat. Mater. 4 [1] 42-6 (2005).
DOI
ScienceOn
|
25 |
J. Zhao X.J. Zhao, J.M. Ni, and H.Z. Tao, "Structural, Electrical and Optical Properties of p-type Transparent Conducting :Al Film Derived from Thermal Diffusion of Al/ /Al Multilayer Thin Films," Acta Mater., 58 6243- 48 (2010).
DOI
|
26 |
X.Q. Pan and L. Fu, "Oxidation and Phase Transitions of Epitaxial Tin Oxide Thin Films on (1012) Sapphire," J. Appl. Phys., 89 [11] 6048-55 (2001).
DOI
|
27 |
Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, "p-channel Thin-Film Transistor using p-type Oxide Semiconductor, SnO," Appl. Phys. Lett., 93 032113:1-3 (2008).
|
28 |
J. Ni, X. Zhao, X. Zheng, J. Zhao, and B. Liu, "Electrical, Structural, Photoluminescence and Optical Properties of ptype Conducting, Antimony-doped Thin Films," Acta. Mater., 57 278-85 (2009).
DOI
|
29 |
Z. Ji, Z. He, Y. Song, K. Liu, and Z. Ye, "Fabrication and Characterization of Indium-doped p-type Thin Films," J. Cryst. Growth, 259 282-85 (2005).
|
30 |
C. H. Lee, B. A. Nam, W. K. Choi, J. K. Lee, D. J. Choi, and Y. J. Oh, "Mn: Ceramics as p-type Oxide Semiconductor," Mater. Lett., 65 722-25 (2011).
DOI
ScienceOn
|
31 |
J. Ni, X. Zhao, and J. Zhao, "P-type Transparent Conducting :Zn Film Derived from Thermal Diffusion of Zn/ /Zn Multilayer Thin Films," Surf. Coat. Tech., 206 [21] 4356-61 (2012).
DOI
|