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Effect of RF Power on SnO Thin Films Obtained by Sputtering

스퍼터링에 의해 제조된 SnO 박막의 RF 파워에 따른 특성 연구

  • Um, Joseph (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology) ;
  • Roh, Byeong-Min (Department of Industrial and Information Systems Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sungdong (Department of Mechanical System and Design Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sarah Eunkyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 엄요셉 (서울과학기술대학교 NID융합기술대학원) ;
  • 노병민 (서울과학기술대학교 글로벌융합산업공학과) ;
  • 김성동 (서울과학기술대학교 기계시스템디자인공학과) ;
  • 김사라은경 (서울과학기술대학교 NID융합기술대학원)
  • Received : 2012.07.12
  • Accepted : 2012.09.28
  • Published : 2012.09.30

Abstract

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.

Keywords

References

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