• Title/Summary/Keyword: Hall Device

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Analysis of Both Hands' Two Pulse Waveforms using a Clip-type Pulsimeter Equipped with Magnetic Sensing Hall Device

  • Rhee, Jin-Kyu;Lee, Sang-Suk
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.183-187
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    • 2013
  • Two concurrent signals of the pulse wave measured from both hands' radial artery in un-pressurization condition using the prototype model of two clip-type pulsimeters with a permanent magnet and Hall device are investigated. The phase differences of two pulse waves from 22 subjects have some distinct points according to the handedness. Thus, the propagation of the pulse wave calculated from phase difference is both fast and slow to each other. It is confirmed that this phenomenon comes from the difference of blood vessel hardness between right- and left-hand of each subject rather than a quantity of muscle.

Integer and fractional quantum Hall effect in graphene heterostructure

  • Youngwook Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.1
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    • pp.1-5
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    • 2023
  • The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

A Three-dimensional Magnetic Field Mapping System for Deflection Yoke of Cathode-Ray Tube

  • Park, K.H.;Yoon, M.;Kim, D.E.;Lee, S.M.;Joo, H.D.;Lee, S.D.;Yang, W.Y.
    • Journal of Information Display
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    • v.3 no.4
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    • pp.19-22
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    • 2002
  • In this paper, we introduce an efficient three-dimensional magnetic field mapping system for a Deflection Yoke (DY) in Cathode-Ray Tube (CRT). A three-axis Hall probe mounted in a small cylindrical bar and three-stepping motors placed in a non-magnetic frame were utilized for the mapping. Prior to the mapping starts, the inner contour of DY was measured by a laser sensor to make a look-up table for inner shape of DY. Three-axis magnetic fields are then digitized by a three-dimensional Hall probe. The results of the mapping can be transformed into various output formats such as multi pole harmonics of magnetic fields. Field shape in one, two and three- dimensional spaces can also be displayed. In this paper, we present the features of this mapping device and some analysis results.

The quality evaluation of SmBCO CC by non-contact R2R Hall sensor array system (R2R Hall Sensor 측정 장치를 이용한 비접촉식 성능평가)

  • Oh, Jae-Geun;Oh, Sang-Soo;Ha, Dong-Woo;Ha, Hong-Soo;Ko, Rock-Kil;Kim, Ho-Sub;Song, Kyu-Jeong;Lee, Nam-Jin;Moon, Seong-Hyun
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.3
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    • pp.1-4
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    • 2008
  • For the effective evaluation of superconducting properties of a coated conductor, with a long length, a non destructive characterization technique including a reel-to-reel (R2R) Hall measuring system have been developed. A non-contact R2R Hall sensor array system was particularly designed to measure the superconducting property of coated conductors. The superconducting properties of long length coated conductors were measured by using this device. It was demonstrated that this system was convenient to measure the intensity and distribution of the magnet field applied perpendicular to the surfaces of the coated conductors. Using this device, the defect and low critical current density(Jc) area of coated conductors could be detected in real-time measurement.

A Three-dimensional Magnetic Field Mapping System for Deflection Yoke of Cathode-Ray Tube

  • Park, K.H.;Yoon, M.;Lee, S.M.;Joo, H.D.;Lee, S.D.;Yang, W.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.868-871
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    • 2002
  • In this paper, we introduce an efficient three-dimensional magnetic field mapping system for a Deflection Yoke (DY) in Cathode-Ray Tube (CRT). A three-axis Hall probe mounted in a small cylindrical bar and three stepping motors placed in a nonmagnetic frame are utilized for the mapping. Prior to the mapping starts, the inner contour of DY is measured by a laser sensor to make a look-up table for inner shape of DY. Three-axis magnetic fields are then digitized by a three-dimensional Hall probe. The results of the mapping can be transformed to various output formats such as multipole harmonics of magnetic fields. Field shape in one, two and three-dimensional spaces can also be displayed. In this paper, we present the features of this mapping device and show some analysis results.

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Spin Hall effect in Au films

  • Kim, Seong-Hoon;Eom, Jong-Hwa;Chang, Joon-Yeon;Han, Suk-Hee
    • Proceedings of the Korean Magnestics Society Conference
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    • 2006.11a
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    • pp.74-75
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    • 2006
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Fabrication of High-Temperature Si Hall Sensors Using Direct Bonding Technology (직접접합기술을 이용한 고온용 Si 홀 센서의 제작)

  • Chung, G.S.;Kim, Y.J.;Shin, H.K.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1431-1433
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    • 1995
  • This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

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