Gated Hall Effect in a Hybrid Ferromagnet-Semiconductor Device

  • Kim W. Y. (Nano Device Research Center, Korean Institute of Science and Technology, Department of Materials Science and Engineering, Yonsei University) ;
  • Chang J. Y. (Nano Device Research Center, Korean Institute of Science and Technology) ;
  • Han S.H. (Nano Device Research Center, Korean Institute of Science and Technology) ;
  • Chang S. G. (Epixon Co., Ltd) ;
  • Lee W. Y. (Department of Materials Science and Engineering, Yonsei University)
  • 발행 : 2004.06.01