• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.16-19
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• 1976

InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.

• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.25-29
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• 2002

We have fabricated a vertical trench Hall device which is sensitive to the magnetic field parallel to the sensor surface. The vertical trench Hall device has been built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT has been measured.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1890-1896
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• 2008

In this paper, the Si vertical Hall devices ale fabricated by using standard bipolar process and investigated in terms of the opeating and noise properties. The sensitivity of device with P+ isolation dam(type B) has been increased up to about 1.2 times compared to that device without the dam also noise has been increased. With the condition of f=I[KHz], band-width 1[Hz], the resolution of magnetic-field detection were about $0.97[{\mu}T]$/ type B and $1.25[{\mu}T]$/ type A, respectively, thus we must consider correlation the low noise or good resolution and high sensitivity in the situation for device geometry design or even for the materials.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.72-78
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• 1992

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2023-2025
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• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.251-253
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• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.13-21
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• 1992

We have constructed the magneto-operational amplifier(MOP) using the advantages of Hall device and an operational amplifier. The MOP necessarily requires a high impedance circuit, a differential-to-single-ended convert-sion circuit and feedback-input-element for operational amplifier characteristics. We have presented a new differential-to-single-ended conversion operational amplifier(DSCOP) having such characteristics. We have designed the MOP using the DSCOP and Hall device and simulated its characteristics, and finally we have constructed the system with discrete elements, and measured its magnetic characteristics.