• Title/Summary/Keyword: Half splitting

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성)

  • 박창선;홍광준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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Properties of Photocurrent and Growth of $CuInSe_2$ single crystal thin film ($CuInSe_2$ 단결정 박막 성장과 광전류 특성)

  • S.H. You;K.J. Hong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.83-83
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    • 2003
  • The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

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Growth and optical characterization of $CuInSe_2$ single crystal thin film for solar cell application (태양전지용 $CuInSe_2$단결정 박막 성장과 광학적 특성)

  • 백승남;홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.4
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    • pp.202-209
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    • 2002
  • The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

First-principles Study on the Half-metallicity and Magnetism of the (001) Surfaces of (AlP)1/(CrP)1 Superlattice ((AlP)1/(CrP)1 초격자계에서 (001) 표면의 자성과 반쪽금속성에 대한 제일원리 연구)

  • Bialek, Beata;Lee, Jae Il
    • Journal of the Korean Magnetics Society
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    • v.25 no.6
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    • pp.175-179
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    • 2015
  • The half-metallicity and magnetism of the (001) surfaces of $(AlP)_1/(CrP)_1$ superlattice were investigated by means of FLAPW (Full-potential Liniarized Augmented Plane Wave) method. We considered four types of (001) surface termination, i.e., Al(S)-, Cr(S)-, P(S)Al(S-1)- and P(S)Cr(S-1)-term systems. We found that only Cr(S)-term system maintains the half-metallicity at the surface as only this system has the calculated magnetic moment of integer number of bohr magnetons. The magnetic moment of Cr(S) atom in the system was $3.02{\mu}_B$ which was increased from the bulk value by the effects of band narrowing and increased spin-splitting at the surface. The electronic density of states of the P(S) atom in the P(S)Al(S-1)-term showed very sharp surface states due to the broken $p_z$ bonds at the surface. We found there is still a strong p-d hybridization between the P(S) and Cr(S-1) layers in the P(S)Cr(S-1)-term which causes a considerable increase of magnetic moment of P(S) atom.

Growth and Characterization of AgGa$Se_2$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 AgGa$Se_2$ 단결정 박막 성장과 특성)

  • Hong, Gwang-Jun;Lee, Gwan-Gyo;Park, Jin-Seong
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.419-426
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    • 2001
  • The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

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Fast Quadtree Structure Decision for HEVC Intra Coding Using Histogram Statistics

  • Li, Yuchen;Liu, Yitong;Yang, Hongwen;Yang, Dacheng
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.9 no.5
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    • pp.1825-1839
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    • 2015
  • The final draft of the latest video coding standard, High Efficiency Video Coding (HEVC), was approved in January 2013. The coding efficiency of HEVC surpasses its predecessor, H.264/MPEG-4 Advanced Video Coding (AVC), by using only half of the bitrate to encode the same sequence with similar quality. However, the complexity of HEVC is sharply increased compared to H.264/AVC. In this paper, a method is proposed to decrease the complexity of intra coding in HEVC. Early pruning and an early splitting strategy are applied to the quadtree structure of coding tree units (CTU) and residual quadtree (RQT). According to our experiment, when our method is applied to sequences from Class A to Class E, the coding time is decreased by 44% at the cost of a 1.08% Bjontegaard delta rate (BD-rate) increase on average.

B20 Crystal Structure and Electromagnetic Property of MnGe and MnSi (B20 결정구조와 MnGe와 MnSi의 전자구조 및 자기적 특성)

  • Jeong, Tae Seong
    • Korean Journal of Materials Research
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    • v.29 no.8
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    • pp.477-482
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    • 2019
  • The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

Strength and permeability of fiber-reinforced concrete incorporating waste materials

  • Xu, Yun;Xu, Yin;Almuaythir, Sultan;Marzouki, Riadh
    • Advances in concrete construction
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    • v.13 no.2
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    • pp.133-152
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    • 2022
  • Ecological issues such as natural resource reduction and enormous waste disposals are increasingly leading in developing civilization toward sustainable construction. The two primary environmental issues are the depletion of natural resources and the disposal of trash in open landfills. Waste steel fiber (WSF) was investigated for usage as a cement-based concrete (CBC) constituent in this research. Recycling waste fibers both makes cement composites more long and cost-effective, also aids in pollution reduction. The objective of this study is to analyze the impacts of waste fiber on the fresh and mechanical features of concrete using recycled additives. A comparative research on the durability and mechanical qualities of fiber-reinforced concrete (FRC) constructed with natural aggregates was conducted for this aim. The obstacles to successful WSF recycling methods application in the building industry have been investigated, resulting that CBCs with these fibers make an economic and long lasting choice to deal with waste materials. The workability of fiber enhanced concrete was found to be comparable to that of normal concrete. Fibers have a considerable impact on the splitting tensile strength, flexural and compressive strength of recycled concrete. Fiber may enhance the water permeability. When the WSF content is 0.6 kg/m3, the water absorption is nearly half. Fibers would have no effect on its permeability.

Effects of the Methods for Generating and Selecting Multiple Preliminary Prices on Budget Prices in Bidding Processes (복수예비가격 생성 및 추첨방법이 예정가격에 미치는 영향)

  • Kang, Minseok;Riew, Moon Charn
    • Journal of the Korea Institute of Building Construction
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    • v.15 no.1
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    • pp.89-97
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    • 2015
  • In bidding processes conducted by government agencies, local governments or public agencies, budget prices are critical to both ordering bodies and bidders since budget prices are bases for selecting a successful bidder. Since a high budget price goes against ordering bodies and a low one goes against bidders, most ordering bodies adopt a system using multiple preliminary prices for determining a budget price to ensure fair and transparent manners. Discussed are how budget prices change depending on the methods of sampling 15 preliminary prices and the methods of sampling 4 out of 15 prices. Computer simulation is conducted to analyze budget prices for various methods to determine multiple preliminary prices. It is more likely for budget prices to be close to base prices when splitting a range of generating preliminary prices into 15 intervals and taking 4 preliminary prices from 15 intervals than when taking 4 preliminary prices from a whole range. In cases when splitting a range of generating preliminary prices, if we take 2 preliminary prices out of intervals above 100% and take 2 out of intervals below 100%, the expected budget prices are equal to a base price and the standard deviations are about half in comparison with those when taking 4 out of 15 intervals.

Analysis of Surface Plasmon Resonance on Periodic Metal Hole Array by Diffraction Orders

  • Hwang, Jeong-U;Yun, Su-Jin;Gang, Sang-U;No, Sam-Gyu;Lee, Sang-Jun;Urbas, Augustine;Ku, Zahyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.176-177
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    • 2013
  • Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

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