• 제목/요약/키워드: Ha partial pressure

검색결과 63건 처리시간 0.027초

포집량에 따른 p-DPF의 정화효율 및 BPT 특성에 관한 실험적 연구 (An Experimental Study on Filtration Efficiency and BPT Characteristics by Soot Loading in Partial-diesel Particulate Filter)

  • 김태권;김영조;하지수;이춘범;오광철
    • 한국자동차공학회논문집
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    • 제19권6호
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    • pp.10-16
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    • 2011
  • Diesel particulate filter is being recognized that it is the most effective technologies to reduce particulate matter. In this study, to determine the characteristics of the cell-open-type pDPF, we employed p-DPF to exhaust gas tunnel of diesel engine and surveyed filtration efficiency and BPT on the basis of PM which is exhausted from engine. In this paper the soot loading mass in DPF can be predicted from increase of differential pressure of DPF so that we can measure filtration efficiency and Balance Point Temperature (BPT) by soot loading mass. The result of the research showed that the filtration efficiency is 65% in ESC mode with 0.7mm hole diameter. For the results of the characteristics of filtration efficiency and BPT according to mass_exh, we found that if mass_exh increases, filtration efficiency increases and BPT decreases.

차륜-레일 구름접촉 시 슬립율에 따른 접촉응력의 변화 해석 (Analysis of Contact Stress with Partial Slip in Wheel-rail Rolling Contact)

  • 이동형;서정원;권석진;최하영;김재철
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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    • pp.643-648
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    • 2011
  • Fatigue crack in most rails take place by rolling contact between wheel and rail in railway industry. Therefore, it is critical to understand the rolling contact phenomena, especially for the three-dimensional situation. In this paper the steady-state rolling contact problem of KTX wheel and rail (UIC60) has been studied with three-dimensional finite element analysis. The variation of contact pressure and contact stresses on rolling contact surface were obtained using the finite element method. The three-dimensional distribution of contact stresses on the contact surface are investigated. Results show that the distribution of shear stress and contact stress (von Mises) on the contact surface varies rapidly as a result of the variation of stick-slip region. The contact stress at the leading edge is greater than at the trailing edge because of stick and slip phenomena.

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수소환원법에 의한 수용액 중 Cu-Al$_2$O$_3$ 복합분말제조 (Preparation of Cu-Al$_2$O$_3$ Composite Powder in the Aqueous Solution by Ha Gas Reduction)

  • 이종현
    • 한국분말재료학회지
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    • 제4권2호
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    • pp.106-112
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    • 1997
  • $Cu-Al_20_3 $ composite powders were prepared by hydrogen reduction of $Cu^{2+}$ from ammoniacal copper sulfate solution on alumina core using autoclave. The copper reduction rate and the properties of copper layer were investigated using Scanning Electron Microscope(SEM), X-ray diffractometer, size and chemical analyzers. The reduction rate of $Cu^{2+}$ showed the maximum value when the molar ratio of [$NH_3$]/[$Cu^{2+}$] was 2. In order to prevent the agglomeration of Cu powder and ethane reduction rate, $Fe^{2+}$ and anthraquinone which act as catalysis were added in the solution. Catalysis was effectively chanced with the addition of two elemerts at a time. Optimum conditions obtained in this study were hydrogen reduction temperature of 205$^{\cire}C$, stirring speed of 500 rpm and hydrogen partial pressure of 300 psi. Obtained $Cu-Al_20_3 $ composite Powders were found to have the uniform and continuous copper coating layer of nodule shape with 3~5 $\mu$m thickness.

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100m 급 batch-type co-evaporation 증착장치를 이용한 SmBCO 초전도테이프 제조 (Fabrication of SmBCO superconducting coated conductor using 100m class batch-type co-evaporation method)

  • 김호섭;오상수;하홍수;양주생;김태형;이남진;정예현;고락길;송규정;하동우;염도준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.24-25
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    • 2006
  • SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

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중소기업에서 기술융복합 지능형 로봇 도입을 통한 혁신성과에 미치는 영향 (Impacts of Innovative Performance Through Adoption of Technology Convergence Intelligent Robot Among Medium-Sized Manufacturing Firms)

  • 최문종;이동하;김상현;박현선;안현숙
    • 디지털융복합연구
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    • 제13권8호
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    • pp.301-313
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    • 2015
  • 현대의 기업경영에서 생산성과 효율성을 높이기 위해 제조 현장에 로봇기술의 도입은 핵심적인 기업경영사항 중에 하나이다. 이에 본 연구는 국내 중소 제조기업을 대상으로 지능형 로봇 기술 도입이 기술, 조직, 환경특성의 총 6개 변수(인지된 직접적 유익성, 인지된 간접적 유익성, 혁신성, 위험감수성, 인지된 산업압력, 인지된 정부압력)가 기업의 프로세스 혁신에 어떤 영향을 미치는지 검증하고자 하였다. 총 77개의 중소 제조기업의 자료로 Partial Least Square(PLS) 접근방법을 사용하여 연구모형의 변수간 인과관계를 분석하였다. 연구결과, 인지된 정부압력을 제외한 총 5가지 요소들이 기업 프로세스 혁신에 중요한 영향을 미치는 것으로 나타났다. 이러한 연구결과를 바탕으로 지능형 로봇을 도입하여 기업 프로세스 혁신을 위한 이론적, 실무적 시사점을 제시하였다.

Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy

  • Lee, Daejang;Cha, An-Na;Park, Junseong;Noh, Hogyun;Moon, Youngboo;Ha, Jun-Seok
    • 마이크로전자및패키징학회지
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    • 제26권4호
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    • pp.113-118
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    • 2019
  • In this study, we investigated the growth of single-crystallinity α-Ga2O3 thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga2O3. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga2O3 thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 104 cm-2.

대기압 플라즈마의 선택적 도핑 공정에서 온도에 의한 인(Phosphorus)의 확산연구 (Study of the Diffusion of Phosphorus Dependent on Temperatures for Selective Emitter Doping Process of Atmospheric Pressure Plasma)

  • 김상훈;윤명수;박종인;구제환;김인태;최은하;조광섭;권기청
    • 한국표면공학회지
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    • 제47권5호
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    • pp.227-232
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    • 2014
  • In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

고온초전도테이프 제작을 위한 YSZ 박막의 고속증착방법 (High speed deposition technique of YSZ film for the superconducting tape)

  • 김호섭;석동기;정준기;고락길;하홍수;송규정;염도준;박찬
    • 한국초전도ㆍ저온공학회논문지
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    • 제6권3호
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    • pp.27-32
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    • 2004
  • High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

CO Fermentation of Eubacterium limosum KIST612

  • Chang, In-Seop;Kim, Do-Hee;Kim, Byung-Hong;Shin, Pyong-Kyun;Sung, Ha-Chin;Lovitt, Robert W.
    • Journal of Microbiology and Biotechnology
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    • 제8권2호
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    • pp.134-140
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    • 1998
  • Eubacterium limosum KIST612 was cultured on phosphate-buffered basal medium (PBBM) with carbon monoxide (CO) as the sole energy and carbon source. The initial growth rate of this strain was approximately 0.17~0.25 $h^-1$/ and the $K_s$ value for dissolved substrate was 0.14 mM. CO was limiting during the growth of the bacterium when the CO partial pressure was less than 0.6 atm (0.5 mM dissolved CO). The bacterial growth rate was reduced in the presence of acetate. When sufficient CO was supplied using a gas-lift reactor, the acetate concentration went up to 90 mM in 116 h. Based on these findings, it is suggested that a pressurized reactor be used to develop a process to convert CO-rich gases into multi-carbon compounds.

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Effects of Substrate Temperature and the $O_2$/Ar Ratio on the Characteristics of RF Magnetron Sputtered $RuO_2$ Thin Films

  • Park, Jae-Yong;Shim, Kyu-Ha;Park, Duck-Kyun
    • The Korean Journal of Ceramics
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    • 제2권1호
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    • pp.43-47
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    • 1996
  • $RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

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