• 센서학회지
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• 제32권2호
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• pp.82-87
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• 2023

This study proposes a pH-dissolved-oxygen monitoring system using 8-HydroxyPyrene-1,3,6-trisulfonic acid Trisodium Salt (HPTS) and tris(4,7-diphenyl-1,10-phenanthroline)Ruthenium(II) chloride (Ru_dpp). Commercial water-quality sensors are electrochemical devices that require frequent calibration and cleaning, are subject to high maintenance costs, and have difficulties conducting measurements in real-time. The proposed pH-dissolved-oxygen monitoring system selects a thin-film sensing layer to measure the change in fluorescence intensity. This change in fluorescence intensity is based on reactions with hydrogen ions in an aqueous solution at a given pH and specific amount of dissolved oxygen. The change in fluorescence intensity is then measured using light-emitting diodes and photodiodes in response to HPTS and Ru_dpp. This method enables the development of a relatively small, inexpensive, and real-time measureable water-quality measurement system.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.9-12
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• 2000

InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2005년도 생물공학의 동향(XVI)
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• pp.478-481
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• 2005

In this study optical sensing membrane was developed for the queantification of dissolved carbon dioxide in micro-bioreactor using an immobilized 8-hydroxypyrene-1,3,6-trisulfonic acid trisodium salt (HPTS). For the immobilization of HPTS sol-gel was synthesied by using 3-glycidoxypropyl-dimethoxymethylsiline and tetraethyl orthosilicate.

• KSBB Journal
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• 제24권1호
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• pp.106-112
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• 2009

An optical sensing membrane has been fabricated to measure the concentration of dissolved oxygen(DO) and pH value simultaneously. It has employed HPTS as a pH sensitive dye and a ruthenium(II) complex as a DO sensitive dye. The sensing membrane has been applied to wells in a 24-well microtiter plate. Using the 24-well microtiter plate the concentrations of dissolved oxygen and pH values have been on-line monitored during the cultivations of E.coli DH5${\alpha}$, B.cereus 318 and P.pastoris X-33. On-line monitoring of DO and pH in microorganism cultivation processes showed good performance of the sensing membrane containing 5 mM HPTS and 2 or 5 mg/mL Rudpp.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.213-216
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• 2001

The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• 대한화학회지
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• 제29권5호
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• pp.510-515
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• 1985

진한 메탄설폰산(약10M)에서 초록색의 $MoO_{(aq)}^{3+}$는 진한 초록색의 이합체인$Mo_2O_2(OH)_{2(aq)}^{4+}$를 생성한다. 또한 이러한 진한 초록색은 15-16M의 메탄설폰산에서 존재하는 $MoO_{(aq)}^{3+}$용액에 물을 가하면 나타나며 15M의 메탄설폰산에서 단위체의 몰흡광계수는 415nm에서 약 20이다. 속도 상수는 이 실험조건하에서 아쿠오몰리브덴(V)와 수소이온농도에 의존하지 않는다. $Mo_2O_2(OH)_{2(aq)}^{4+}$의 수산화이온은 HPTS 약 6M, $CH_3SO_3H$는 10M이하에서 탈수소화반응이 일어난다. 마지막 생성물의 말단산소와 다리산소의 구조는 (*image) 단위를 가진 것으로 확인되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.546-550
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• 2002

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.5-8
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• 2000

This paper shows the high performance as a photodetector of InGaP/GaAs HPT with 3-terminal caused by its inherent good electrical properties compared with AIGaAs/GaAs HPT. InGaP/GaAs HPT produced the high optical gain of about 61 where HPT is biased at Vc=3V, Iв=2${\mu}\textrm{A}$ with an input optical power of 1.23㎼. This is 2.5 times higher than that of AIGaAs/GaAs HPT. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. for a given base current of 2${\mu}\textrm{A}$, the optical gain is enhanced about 18% in the InGaP/GaAs HPT and about 27% in the AIGaAs/GaAs HPT over that of the 2-terminal device.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.229-232
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• 2000

InP/lnGaAs HPT's were fabricated by employing Indium Tin Oxide(ITO) transparent emitter contact. The device showed the current gaing 70 was obtained but the emitter series resistance was significantly increased. the electrical charateristics of the device were similar to HBT's. However Vceoff was shifted the positive direction. Such a shift ma be resulted from the formation of the shottky barrier rather than the ohmic contact between ITO and n+ InP emitter.