• 열처리공학회지
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• 제34권5호
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• 대한기계학회논문집B
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• 제22권5호
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• pp.563-572
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• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• 한국세라믹학회지
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• 제28권10호
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• 한국진공학회지
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• 제7권2호
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• pp.94-103
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• 1998

HFCVD(Hot Filament Chemical Vapor Deposition)방법을 이용한 다이아몬드의 핵 생성과 성장에 있어서, 인가한 직류 bias를 변수로 하여 핵생성 밀도와 증착율의 변화를 조 사하였다. 반응압력 20torr, 메탄농도 1.0%, Filament 온도 $2100^{\circ}C$ 그리고 Substrate 온도 $980^{\circ}C$에서 증착 단계를 핵생성기와 성장기로 구분하고 각 단계마다 bias의 방향과 크기를 다르게 인가하면서 다이아몬드 박막을 증착시켰다. Negative bias는 핵생성기에는 핵생성을 촉진시키지만 성장기에도 계속 인가하면 결정입자의 지속적인 성장을 방해하고 결정 구조를 비다이아몬드 성분으로 변화시키는 작용을 하여 박막의 morphology에 좋지 않은 영향을 주 었다. Positive bias는 핵생성기와 성장기에서 모두 $CH_4$의 분해를 촉진시킨 결과 증착율의 향상을 가져왔다. 따라서 다이아몬드 박막의 증착시 핵생성기에서는 negative bias를 인가하 고 성장기에는 positive bias를 인가하는 것이 핵생성 밀도와 증착율의 향상에 효과적인 것 으로 조사되었다.

• 열처리공학회지
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• 제33권1호
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.54-54
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• 2018

To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in the hot filament chemical vapor deposition (HFCVD) system. In this study the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16 and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software, ANSYS-FLUENT. To account for radiative heat-transfer in the HFCVD reactor, the discrete ordinate (DO) model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512 ~ 2802 K, and 1076 ~ 1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with experimental temperatures measured using a 2-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

• 한국세라믹학회지
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• 제56권3호
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• 한국재료학회지
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• 제11권12호
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• pp.1014-1019
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• 2001

The diamond thin film was deposited on Si(100) substrate from$CH_3OH/H_2O$mixtured gas using a hot filament chemical vapor deposition(HFCVD) method. The deposition condition for samples has been varried with the$CH_3OH/H_2O$composition. Scanning electron microscopy(SEM) and Raman spectroscopy has been employed for the sample analysis. The diamond sample has been obtained below 20Pa with$CH_3OH/H_2O$mixtured gas. The crystallinity of diamond film improved as the composition $CH_3OH$decreases from 60Vol% to 52Vol%, and the sample structure changed from the cauliflower to the diamond structure. But the sample structure was becomes cauliflower at 50Vol% of in$CH_3OH$ in the $CH_3OH/H_2O$. It was shown that the$CH_3OH$ has threshold composition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.168-168
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• 2016

BDD(Boron Doped Diamond) 전극은 전위창이 넓고, 다른 불용성 전극에 비해 산소발생과전압이 높아 물을 전기화학적인 방법으로 처리하는 영역에 있어 매우 효과적일 뿐만 아니라, 전통적인 불용성 전극에 비해 전극 표면에서 수산화 라디칼(-OH)과 오존(O3)의 발생량이 월등히 높아 수처리용 전극으로서의 유용성이 매우 높다. 따라서 BDD 전극을 수처리용 전극에 사용하는 경우 수산화 라디칼(-OH)과 오존(O3), 과산화수소(H2O2) 등과 같은 산화제의 생성은 물론이고, 염소(Cl2)가 포함되어 있는 전해액에서는 차아염소산(HOCl)이나 차아염소산이온(OCl-)과 같은 강력한 산화제가 발생되어 전기화학적 폐수처리, 전기화학적 정수처리, 선박평형수 처리 등의 분야에 널리 활용될 수 있다. 본 연구에서는 상온 및 상압에서 운전이 가능하고 난분해성 오염물질 제거 효과가 뛰어난 전기화학적 고도산화공정(Electrochemical Advanced Oxidation Process, EAOP)에 적합한 대면적의 BDD 전극을 개발하고 자 하였다. 이러한 BDD 전극의 성막 방법으로는 필라멘트 가열 CVD, 마이크로파 플라즈마 CVD, DC 플라즈마 CVD 등이 널리 알려져 있는데 최근에는 설비의 투자비가 비교적 저렴하고, 대면적의 기판처리가 용의한 필라멘트 가열 화학기상증착법(Hot Filament Chemical Vapor Deposition, HFCVD)이 상업적으로 각광을 받고 있다. 따라서 본 연구에서는 HFCVD 방법을 이용하여 반응 가스의 투입비율, BDD 박막의 두께, 기판의 재질 등에 따른 여러 가지 성막 조건들을 검토하여 $100{\times}100mm$ 이상의 대면적 BDD 전극을 개발하였다. Fig. 1은 본 연구를 통하여 얻어진 BDD 전극의 표면 및 단면 SEM이다.

• 한국재료학회지
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• 제14권12호
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.