• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.5
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• pp.563-572
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• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.54-54
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• 2018

To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in the hot filament chemical vapor deposition (HFCVD) system. In this study the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16 and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software, ANSYS-FLUENT. To account for radiative heat-transfer in the HFCVD reactor, the discrete ordinate (DO) model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512 ~ 2802 K, and 1076 ~ 1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with experimental temperatures measured using a 2-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1014-1019
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• 2001

The diamond thin film was deposited on Si(100) substrate from$CH_3OH/H_2O$mixtured gas using a hot filament chemical vapor deposition(HFCVD) method. The deposition condition for samples has been varried with the$CH_3OH/H_2O$composition. Scanning electron microscopy(SEM) and Raman spectroscopy has been employed for the sample analysis. The diamond sample has been obtained below 20Pa with$CH_3OH/H_2O$mixtured gas. The crystallinity of diamond film improved as the composition $CH_3OH$decreases from 60Vol% to 52Vol%, and the sample structure changed from the cauliflower to the diamond structure. But the sample structure was becomes cauliflower at 50Vol% of in$CH_3OH$ in the $CH_3OH/H_2O$. It was shown that the$CH_3OH$ has threshold composition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.168-168
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• 2016

BDD(Boron Doped Diamond) 전극은 전위창이 넓고, 다른 불용성 전극에 비해 산소발생과전압이 높아 물을 전기화학적인 방법으로 처리하는 영역에 있어 매우 효과적일 뿐만 아니라, 전통적인 불용성 전극에 비해 전극 표면에서 수산화 라디칼(-OH)과 오존(O3)의 발생량이 월등히 높아 수처리용 전극으로서의 유용성이 매우 높다. 따라서 BDD 전극을 수처리용 전극에 사용하는 경우 수산화 라디칼(-OH)과 오존(O3), 과산화수소(H2O2) 등과 같은 산화제의 생성은 물론이고, 염소(Cl2)가 포함되어 있는 전해액에서는 차아염소산(HOCl)이나 차아염소산이온(OCl-)과 같은 강력한 산화제가 발생되어 전기화학적 폐수처리, 전기화학적 정수처리, 선박평형수 처리 등의 분야에 널리 활용될 수 있다. 본 연구에서는 상온 및 상압에서 운전이 가능하고 난분해성 오염물질 제거 효과가 뛰어난 전기화학적 고도산화공정(Electrochemical Advanced Oxidation Process, EAOP)에 적합한 대면적의 BDD 전극을 개발하고 자 하였다. 이러한 BDD 전극의 성막 방법으로는 필라멘트 가열 CVD, 마이크로파 플라즈마 CVD, DC 플라즈마 CVD 등이 널리 알려져 있는데 최근에는 설비의 투자비가 비교적 저렴하고, 대면적의 기판처리가 용의한 필라멘트 가열 화학기상증착법(Hot Filament Chemical Vapor Deposition, HFCVD)이 상업적으로 각광을 받고 있다. 따라서 본 연구에서는 HFCVD 방법을 이용하여 반응 가스의 투입비율, BDD 박막의 두께, 기판의 재질 등에 따른 여러 가지 성막 조건들을 검토하여 $100{\times}100mm$ 이상의 대면적 BDD 전극을 개발하였다. Fig. 1은 본 연구를 통하여 얻어진 BDD 전극의 표면 및 단면 SEM이다.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.