• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.59-65
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• 2008

We have proposed a UHF/HF multi-band RFID reader, and have implemented it into a system in a package(SiP). The proposed SiP RFID reader has been designed to support both for EPCgloabal Class1 Generation2 protocol of UHF band, and 13.56MHz RFID protocols of ISO14443 A/B type, and ISO15693 standards. The operating mode is controlled by embedded RISC core, and the mode can be selected by users. The area of implemented SiP is $40mm{\times}40mm$ with 4 metal layers. The implemented reader SiP operates at single supply voltage of 3.3V. The maximum current consumption is 210mA. The operating distances are 5cm for 13.56MHz modes, and 20cm for UHF mode.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.29-33
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• 2002

Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

• Nuclear Engineering and Technology
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• v.45 no.2
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• pp.165-178
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• 2013

A comprehensive review on the technical standards about human factors (HF) design and software reliability maintenance for digital instrumentation and control (I&C) and human-machine interface technology (HMIT) in Japanese light water reactor nuclear power plants (NPPs) was given in this paper mainly by introducing the relevant activities at the Japan Electric Association to set up many industrial standards within the traditional framework of nuclear safety regulation in Japan. In Japan, the Fukushima Daiichi accident that occurred on March 11, 2011 has great impact on nuclear regulation and nuclear industries where concerns by the general public about safety have heightened significantly. However for the part of HF design and software reliability maintenance of digital I&C and HMIT for NPP, the author believes that the past practice of Japanese activities with the related technical standards can be successfully inherited in the future, by reinforcing the technical preparedness for the prevention and mitigation against any types of severe accident occurrence.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.219.2-219.2
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• 2007

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.373-377
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• 2015

이 연구에서는 원자 궤도 함수 기반 DFT 전자구조 계산을 이용해서 최근 각광받고 있는 이차원 물질인 MoS2 monolayer의 S 자리와 Mo 자리에 각각 전자가가 다른 원자를 치환하였을 때의 도핑 특성을 Density of States (DOSs)와 밴드구조 등의 전자구조를 통해 분석해 보았다. S자리에 Cl, Si, I, B, C, Mo 자리에는 Hf, Ta, 그리고 Re을 치환해 보았으며 계산 결과 S자리에 Cl을 치환했을 때 가장 얕은 acceptor level (VBM으로부터 0.08 eV)이 형성되었으며, Mo자리에 Re를 치환했을 때에는 resonant state를 형성하였다. 또한 Mo자리에 Ta를 치환했을 ? 가장 얕은 donor level (CBM으로부터 0.02 eV)가 형성되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.20.2-20.2
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• 2009

최근 무전해 식각법을 이용한 실리콘 나노와이어 합성이 다양한 각도에서 이루어지고 있다. 무전해 식각법을 통한 나노와이어 합성은, 단결정 실리콘 기판에 촉매를 올려 기판을 식각할 수 있는데, 이 방법을 이용하여 넓은 면적의 수직방향으로 배열된 10 ~ 300nm 지름의 단결정 실리콘 나노와이어를 합성할 수 있다. 본 연구에서는 무전해 식각법으로 boron이 도핑된 p-type실리콘 기판을 식각하여 실리콘 나노와이어를 합성하였고, 단일 나노와이어의 field-effect transistor(FET) 소자가 가지는 전기적 특성에 대하여 분석하였다. 특히 무전해 식각법을 이용하여 나노와이어를 합성할 때, 촉매로 사용되는 Ag particle이 나노와이어에 미치는 영향에 대해서 분석해 보았다. FET 소자의 게이트 절연막은 가장 일반적으로 사용되는 SiO2 (300nm)와 고유전체로 잘 알려진HfO2(80nm)를 사용하여 전기적 특성을 비교하여 보았다. 한편, HfO2 박막은 atomiclayer deposition(ALD)장비를 이용하여 증착하였다. 합성된 실리콘 나노와이어의 경우 X-ray diffraction(XRD)로 결정성을 확인하였으며, high-resolution transmission electron microscopy(HRTEM)으로 결정성 및 나노와이어의 표면 형태를 확인하였다. 전기적 특성은 I-V 측정을 통하여 Ion/Ioff ratio, 이동도, subthreshold swing, subthreshold voltage값을 평가하였다.

• Journal of Technologic Dentistry
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• v.23 no.1
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• pp.55-64
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• 2001

This study is focusing on the improvement of problems of Ti-6Al-4V alloy. A new Ti based alloy, Ti-15Sn-4Nb, have designed to examine any possibility of improving the mechanical properties and biocompatibility. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at $100^{\circ}C$ for 24h. All specimens were solution treated at $812^{\circ}C$ and aged at $500^{\circ}C$ for 10h. The corrosion resistance of Ti alloys was evaluated by potentiodynamic polarization test and immersion test inl%Lactic acid solutions. Ti-15Sn-4Nb system alloys showed Widmanstatten microstructure after solution treatment which is typical microstructure of ${\alpha}+{\beta}$ type Ti alloys. Analysing the corrosion resistance of Ti alloys, it was concluded that the passive films of Ti-15Sn-4Nb system alloys are more stable than that of Ti-6Al-4V alloys. Also, the corrosion resistance of Ti-15Sn-4Nb system alloys was improved with adding elements, Hf. It was analysed that the passive film of the Ti-15Sn-4Nb alloy which was formed in air atmosphere was consisted of TiO2, SnO and NbO through X-ray photoelectron spectroscopy(XPS) analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.