• 한국주조공학회지
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• 제41권3호
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• pp.235-240
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• 2021

진공 가스분사법으로 제조된 Fe₇₅B₁₃P₅Nb₂Hf₁C₄ 합금의 응고중 액상의 크기와 이에 따른 냉각속도의 변화가 정출상의 형성에 미치는 영향에 대한 고찰을 하였다. 고온 액상에서 동일한 조건으로 응고된 서로 다른 크기의 액상이 구형의 분말형태로 응고될 때 크기에 따른 임계냉각속도의 차이를 계산하였으며, 액상의 평균 반지름이 3배정도 크기 차이가 날 경우 고상으로 변태할 때 임계냉각속도가 13.5배까지 차이가 나는 것을 알 수 있었다. 이러한 임계냉각 속도의 차이에 따른 정출상의 형성과 정출상의 형태와 크기에 따른 탄화물의 형성 거동을 조사하여 열역학 계산으로 예측된 결과와 비교 분석하였으며, 분말입자의 크기가 20~45 마이크론일 경우 Hf과 Nb이 포함된 MC타입의 탄화물이 초정으로 형성 되는 것을 알 수 있었으며 이때 Hf과 Nb의 비율은 합금의 조성 및 냉각속도에 따라 변화됨을 관찰 할 수 있었다.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.448-454
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• 2009

Hydrogen was produced from water plasma excited in high frequency (HF) inductively coupled tubular reactor. Mass spectrometry was used to monitor gas phase species at various process conditions, Water dissociation rate depend on the process parameters such as ICP power, $H_{2}O$ flow-rate and process pressure, Water dissociation percent in ICP reactor decrease with increase of chamber pressure, while increase with increase of ICP power and $H_{2}O$ flow rate. The effect of $CH_4$ gas addition to a water plasma on the hydrogen production has been studied in a HF ICP tubular reactor. The main roles of $CH_4$ additive gas in $H_{2}O$ plasma are to react with 0 radical for forming $CO_x$ and CHO and resulting additional $H_2$ production. Furthermore, $CH_4$ additives in $H_{2}O$ plasma is to suppress reverse-reaction by scavenging 0 radical. But, process optimization is needed because $CH_4$ addition has some negative effects such as cost increase and $CO_x$ emission.

• 한국세라믹학회지
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• 제53권5호
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• pp.563-567
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• 2016

The structural properties of $HfO_2$ films could be improved by thermal treatment owing to their crystallization. We deposited $HfO_2$ films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than $4.5{\times}10^{-6}$ Pa, RF power was 100 W, working temperature was $200^{\circ}C$, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the $HfO_2$ films, the samples were thermally treated by rapid thermal annealing (RTA) in $O_2$ ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an $HfO_2$ film thermally treated at $800^{\circ}C$ in $O_2$ ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

• 청정기술
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• 제8권3호
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• pp.119-128
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• 2002

분획분자량이 50,000인 acrylonitrile과 vinyl chloride의 공중합체 재질의 한외여과막(KOCH Membrane System, HF1-45-CM50)과 분획분자량이 100,000인 polysulfone 한외여과막(KOCH Membrane System, HF1-43-CM100)을 사용하여 순수에 3% 농도로 희석한 수용성 합성 절삭유의 투과특성을 연구하였다. 친수성 분리막인 HF1-45-CM50은 합성 절삭유의 투과실험에서 높은 투과유속과 오일성분 투과율을 보였으나 소수성 분리막인 HF1-43-CM100의 경우에는 오일 투과율은 HF1-45-CM50과 유사하였으나 투과유속은 훨씬 저하되었는데 이는 합성 절삭유가 소수성 막의 표면을 쉽게 적셔서 친수성 막에 비해 더 심한 막오염을 유발시킨다는 것을 의미한다. 또한 분리막 재질의 특성이 합성 절삭유의 투과특성에 미치는 영향이 분리막의 평균 기공크기의 영향보다 훨씬 더 크다는 사실을 알 수 있었다. 막오염을 감소시키기 위해 질소에 의한 역세척 실험을 수행한 결과 역세척 효과가 친수성 분리막에서는 뚜렷이 나타났으나 소수성 분리막의 경우에는 오히려 투과유속의 감소를 초래하였다. 폐합성 절삭유에 의해 오염된 분리막의 세척실험에서는 세척용액에 분리막을 72시간 이상 침지시킨 후 역세척을 수행할때 가장 높은 투과유속의 회복율을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.924-928
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• 2010

In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.

• 전기학회논문지
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• 제56권2호
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Nuclear Engineering and Technology
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• 제51권3호
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• pp.792-799
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• 2019

The present study aims to investigate the fluorination of thorium oxide ($ThO_2$) by ammonium hydrogen difluoride ($NH_4HF_2$). Fluorination was performed at room temperature by mixing $ThO_2$ and $NH_4HF_2$ at different molar ratios, which was then left to react for 20 days. Next, the mixtures were analyzed using X-ray diffraction (XRD) at the intervals of 5, 10, 15, and 20 days, followed by the heating of the mixtures at $450-750^{\circ}C$ with argon gas flow. The characterization of $ThF_4$ was established using X-ray diffraction (XRD) and scanning electron microscopy-dispersion X-ray spectroscopy (SEM-EDX). In this study, ammonium thorium fluoride was synthesized through the fluorination of $ThO_2$ at room temperature. The optimum molar ratio in synthesizing ammonium thorium fluoride was 1.0:5.5 ($ThO_2:NH_4HF_2$) with 5 days reaction time. In addition, the heating of ammonium thorium fluoride at $450^{\circ}C$ was sufficient to produce $ThF_4$. Overall, this study proved that $NH_4HF_2$ is one of the fluorination agents that is capable of synthesizing $ThF_4$.

• 분석과학
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• 제21권2호
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• pp.84-92
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• 2008

속빈 섬유-액상 미량추출법(hollow fiber-liquid phase microextraction, HF-LPME)과 기체 크로마토그래프/질소-인 검출기(GC-NPD)를 사용하여 사람의 뇨와 여러 가지 음료 중에서 극미량의 카페인을 분석하는 방법을 확립하였다. 수용액 시료로부터 카페인의 양을 측정하기 위해서 속빈 섬유의 길이, 추출용매의 종류, 교반효과, pH 및 염석효과 등 여러 가지 실험적인 파라미터를 변화시켜서 최적의 조건을 확립하고자 하였다. 검정곡선의 회귀계수($r^2$)는 0.9994이상이었으며, 평균 상대 회수율은 102%(n=3)이었으며, 기기검출한계는 2.5 ng/mL, 정량한계는 10 ng/mL이었다. 확립된 HF-LPME 방법은 생물학적 시료, 음식물, 환경시료 중에서 카페인의 농도를 측정하기에 편리하고 정확한 방법이 될 것이다.