• Journal of Dental Rehabilitation and Applied Science
• /
• v.23 no.4
• /
• pp.269-281
• /
• 2007

Fluoric acid etching is an essential procedure in cementation of reinforced ceramics to tooth surface. But there have been few studies about the changes of surface structure and flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to the etching time. The objectives of this study were to examine the surface structure changes and the difference in biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic according to various etching times. Sixty one disk-shaped specimens of IPS $Empress^{(R)}$ 2 ceramic($14mm{\times}1.2mm$) were fabricated for the biaxial flexural strength test and SEM analysis according to the manufacturer's recommendations. Sixty specimens were divided into 6 groups(n=10) according to the time of HF acid etching(0, 20, 180 and 300s)and silane/resin cement application. Each disk was loaded using a piston-on-3 ball biaxial configuration in a universal testing machine. The failure loads(N) were recorded, and the biaxial flexural strength for each disk was calculated. A one-way analysis of variance and independent t-test on transformed fracture strength data were used to determine significant differences between groups. The groups of no cementation showed a trend toward progressive weakening with increasing the etching time. However, this was not statistically significant at p=0.05 level. The groups of resin cementation exhibited no apparent trend in their mean strength values. SEM photomicrographs showed very different results of etching. Within the conditions of this study, alteration of surface topography by acid etching does not have a deleterious effect on the biaxial flexural strength of IPS $Empress^{(R)}$ 2 ceramic.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.404-404
• /
• 2016

태양전지 제작 시 표면에 피라미드 구조를 형성하면 입사되는 광의 흡수를 높여 광 생성 전류의 향상에 기여한다. 일반적인 KOH를 이용한 습식 표면조직화 공정은 평균 10%의 반사율을 보였으며, 유도 결합 플라즈마를 이용한 RIE 공정은 평균 5.4%의 더 낮은 반사율을 보였다. 그러나 RIE 공정을 이용한 표면조직화는 낮은 반사율과 서브 마이크론 크기의 표면 구조를 만들 수 있지만 플라즈마 조사에 의한 표면 손상이 많이 발생하게 된다. 이러한 표면 손상은 태양전지 제작 시 표면에서 높은 재결합 영역으로 작용하게 되어 포화 전류(saturation currents, $J_0$)를 증가시키고 캐리어 수명(carrier lifetime, ${\tau}$)을 낮추는 결함 요소로 작용한다. 이러한 플라즈마에 의한 표면 손상을 제거하기 위해 HF, HNO3, DI-water를 이용하여 DRE(Damage Remove Etching) 공정을 진행하였다. DRE 공정은 HF : DI-water 솔루션과 HNO3 : HF : DI-water 솔루션의 두 가지 공정을 이용하여 공정 시간을 가변하며 진행하였다. 포화전류($J_0$), 캐리어 수명(${\tau}$), 벌크 캐리어 수명(Bulk ${\tau}$)을 비교를 하기위해 KOH, RIE, RIE + DRE 공정을 진행한 세 가지 샘플로 실험을 진행하였다. DRE 공정을 적용할 경우 공정 시간이 지날수록 반사도가 높아지는 경향을 보였지만, 두 번째의 최적화된 솔루션 공정에서 $2.36E-13A/cm^2$, $42{\mu}s$의 $J_0$, Bulk ${\tau}$값과 가장 높은 $26.4{\mu}s$의 ${\tau}$를 얻을 수 있었다. 이러한 결과는 오제 재결합(auger recombination)이 가장 많이 발생하는 지역인 표면과 불균일한 도핑 영역에서 DRE 공정을 통해 나아진 표면 특성과 균일한 도핑 프로파일을 형성하게 되어 재결합 영역과 $J_0$가 감소 된 것으로 판단된다. 높아진 반사도의 경우 $SiN_x$를 이용한 반사방지막을 통해 표면 반사율을 1% 이내로 내릴 수 있어 보완이 가능하였다. 본 연구에서는 RIE 공정 중 플라즈마에 의해 발생하는 표면 손상 제거를 통하여 캐리어 라이프 타임의 향상된 조건을 찾기 위한 연구를 진행하였으며, 기존 RIE 공정에 비해 반사도의 상승은 있지만 플라즈마로 인한 표면 손상을 제거하여 오제 재결합에 의한 발생하는 $J_0$를 낮출 수 있었고 높은 ${\tau}$값인 $26.4{\mu}s$의 결과를 얻어 추후 태양전지 제작에 향상된 효율을 기대할 수 있을 것으로 기대된다.

• The Journal of Korean Academy of Prosthodontics
• /
• v.37 no.5
• /
• pp.658-671
• /
• 1999

The major influencing factors on the strength of all-ceramic crowns are types of dental ceramics, fabrication techniques, methods of abutment preparation and cementation modes of all-ceramic restorations. Zinc phosphate cement and glass-ionomer cement were used as an early lot-ing media for all-ceramic crowns. Recently many studies have reported that resin cements have more advantages in increasing the fracture strength of restorations comparing with zincphosphate cement and glass-ionomer cement. The purpose of this study is to investigate the effect of etching, silane treatment, sandblasting and dentin bonding agents on fracture strengths of dental ceramics. 40 flat dentin specimens and 40 ceramic discs of 1.5mm thickness and 8mm diameter were fabricated, and divided into 4 groups according to surface treatments. Surface treatments before cementation were as follows Group I : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : application of dentin bonding agent Group II : (ceramic) : sandblasting - application of bonding resin (dentin) : application of dentin bonding agent Group III : (ceramic) : application of bonding resin (dentin) : application of dentin bonding agent Group IV : (ceramic) : HF etching - silane treatment - application of bonding resin (dentin) : no dentin bonding procedure Dentin specimens and ceramic discs were cemented with dual cure resin cement, and went through thermocycling. Compressive stress es were loaded on the centers of ceramic discs with Instron test-ing machine, and fracture strengths resistance for catastrophic fracture were measured The results were as follows. 1. The group I showed the highest fracture resistance. The next was group II And group III, IV followed. 2. There was a significant difference in the mean value of fracture strengths between group I and group III (p<0.05), but no significant differences between group I and group II, and group II and group III (p>0.05). 3. There was a significant difference in the mean value of fracture strengths between group I and group IV (p<0.05).

• Korean Chemical Engineering Research
• /
• v.45 no.2
• /
• pp.203-207
• /
• 2007

In this paper efficient method for particle removal from silicon wafers by usage of HF and ozone was studied. It was found that at least 0.3 vol% concentration of HF was required for particle removal and removal efficiency increased with the application of megasonic in ozonated water. Additional cleaning with minute amount of ammonia (0.01 vol%) after HF/Ozone step showed over 99% in removal efficiency. It is proposed that the superior cleaning efficiency of HF-Ozone-ammonia is due to micro-etching of silicon surface and impediment of particle re-adsorption in alkali environment. Compared to SC-1 cleaning method micro roughness has also been slightly improved. Therefore it is expected that HF-ozone-ammonia cleaning method is a viable alternative to the conventional wet cleaning methods.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.88.1-88.1
• /
• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.284-284
• /
• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.3
• /
• pp.138-143
• /
• 2007

The effects of texturing and anti-reflection coating on the reflection properties of multi-crystalline silicon solar cell have been investigated. The chemical solutions of alkaline and acidic etching solutions were used for texturing at the surface of multi-crystalline Si wafer. Experiments were performed with various temperature and time conditions in order to determine the optimized etching condition. Alkaline etching solution was found inadequate to the texturing of multi-crystalline Si due to its high reflectance of about 25%. The reflectance of Si wafer texturing with acidic etching solution showed a very low reflectance about 10%, which was attributed to the formation of homogeneous. Also, deposition of ITO anti-reflection coating reduced the reflectance of multi-crystalline si etched with acidic solution($HF+HNO_3$) to 2.6%.

• Journal of the Korean Vacuum Society
• /
• v.21 no.2
• /
• pp.99-105
• /
• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.4
• /
• pp.55-60
• /
• 2009

Porous silicon film is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. Effects of Si type, Si resistivity, ultrasonic frequency, current density and etching time on surface morphology of PS film were studied. Electrochemical etching in ultrasonic bath promotes the uniformity of porous layer of Si. Frequency of ultrasonic was increased from 40 kHz to 130 kHz to obtain uniform pores on the Si surface. When current density was higher, the sizes of pores were larger. The new etching cell using back contact metal and current shield help to overcome nonhomogeneity and current crowding effect, and then leads to fabricate uniform pores on the Si surface. The distribution of pore size shows no notable tendency with etching time.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.380-381
• /
• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.