• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.534-539
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• 2010

$HfB_2$-HfC composites were prepared by reactive hot pressing using Hf and $B_4C$ at temperatures of 1800 and $1900^{\circ}C$ for 60 min under 32 MPa in an Ar atmosphere. The reaction sequences of the $HfB_2$-HfC composite were studied through series of pressureless heat treatments ranging from 800 to $1600^{\circ}C$. The effect of size reduction of the starting powders on densification was investigated by vibration milling. Fully dense $HfB_2$-HfC composites were obtained by size reduction of the starting powders via vibration milling. The oxidation behaviour of the $HfB_2$-HfC composites at $1500^{\circ}C$ in air showed formation of a non-protective $HfO_2$ scale with linear mass gain. Examination of the mechanical properties showed that particle size reduction via vibration milling also led to improved flexural strength, hardness and fracture toughness.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.791-796
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• 1998

self-aligned silicide(salicide)제조시 CoSi2의 에피텍셜 성장을 돕기 위하여 Co와 Si 사이에 내열금속층을 넣은 Co/내열금속/Si의 실리사이드화가 관심을 끌고 있다. Hf 역시 Ti와 마찬가지로 이러한 용도로 사용될 수 있다. 한편, Co/Hf 이중층 salicide 트랜지스터가 성공적으로 만들어지기 위해서는 spacer oxide 위에 증착된 Co/Hf 이중층이 열적으로 안정해야 한다. 이러한 배경에서 본 연구에서는 SiO2기판 위에 증착한 Co 단일층과 Co/Hf 이중층을 급속열처리할 때 Co와 SiO2간의 계면과 Co/Hf와 SiO2간의 계면에서의 상호반응에 대하여 조사하였다. Co 단일층과 Co/Hf 이중층은 각각 $500^{\circ}C$와 $550^{\circ}C$에서 열처리한 후 면저항이 급격하게 증가하기 시작하였는데, 이것은 Co층이 SiO2와의 계면에너지를 줄이기 위하여 응집되기 때문이다. 이 때 Co/Hf의 경우 열처리후 Hf에 의하여 SiO2 기판이 일부 분해됨으로써 Hf 산화물이 형성되었으나, 전도성이 있는 HfSix 등의 화합물은 발견되지 않았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.11-14
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• 2003

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

• Corrosion Science and Technology
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• v.22 no.1
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• pp.30-35
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• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.138-138
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• 2017

차세대 CMOS 소자의 지속적인 고직접화를 위해서는 높은 gate capacitance와 낮은 gate leakage current를 확보를 위한, 적절한 metal gate electrode와 high-k dielectric 물질의 개발이 필수적으로 요구된다. 특히, gate dielectric으로 적용하기 위한 다양한 high-k dielectric 물질 후보군 중에서, 높은 dielectric constant와, 낮은 leakage current, 그리고 Si과의 우수한 열적 안정성을 가지는 Zr silicates 또는 Hf silicates(ZrSiO4와 HfSiO4) 물질이 높은 관심을 받고 있으며, 이를 원자층 증착법을 통해 구현하기 위한 노력들이 있어왔다. 그러나, 현재까지 보고된 원자층 증착법을 이용한 Zr silicates 및 Hf silicates 공정의 경우, 개별적인 Zr(또는 Hf)과 Si precursor를 이용하여 ZrO2(또는 HfO2)과 SiO2를 반복적으로 증착하는 방식으로 Zr silicates 또는 Hf silicates를 형성하고 있어, 전체 공정이 매우 복잡해지는 문제점 뿐 아니라, gate dielectric 내에서 Zr과 Si의 국부적인 조성 불균일성을 야기하여, 제작된 소자의 신뢰성을 떨어뜨리는 문제점을 나타내왔다. 따라서, 본 연구에서는 이러한 문제점을 개선하기 위하여, 하나의 precursor에 Zr (또는 Hf)과 Si 원소를 동시에 가지고 있는 DNS-Zr과 DNS-Hf bimetallic precursor를 이용하여 새로운 ZrSiO4와 HfSiO4 ALD 공정을 개발하고, 그 특성을 살펴보고자 하였다. H2O와 O3을 reactant로 사용한 원자층 증착법 공정을 통하여, Zr:Si 또는 Hf:Si의 화학양론적 비율이 항상 일정한 ZrSiO4와 HfSiO4 박막을 형성할 수 있었으며, 이들의 전기적 특성 평가를 진행하였으며, dielectric constant 및 leakage current 측면에서 우수한 특성을 나타냄을 확인할 수 있었다. 이러한 결과를 바탕으로, bimetallic 전구체를 이용한 ALD 공정은 차세대 고성능 논리회로의 게이트 유전물질에 응용이 가능할 것으로 판단된다.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.30-36
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• 2009

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.8
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• pp.965-974
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• 2007

This study was performed to investigate the effects of vegetable sprout powder on serum and adipose tissue lipid metabolism in rats fed high-fat diet for 4 weeks for induction hyperlipidemic model rat. Weight-matched male Sprague-Dawley rats were assigned to five groups according to dietary fat level (10% or 20% of diet wt.) and mixture of vegetable sprout powder levels (5% or 10% 10% or 20% of diet wt.). Vegetable sprout powder was the mixture of same amounts of dried barley, broccoli, rapeseed, alfalfa, radish, mustard, buckwheat and brussels sprouts. Experimental groups were normal fat diet with 5% cellulose (NF-C), high fat diet without fiber (HF-N), high fat diet with 5% cellulose (HF-C), HF-C diet with 5% vegetable sprout powder (HF-CSL), and HF-C diet with 10% vegetable sprout powder (HF-CSH). The body weight of HF-N group increased 16% compared with the NF-C group, while it was decreased by 15% and 22% for HF-CSL group and HF-CSH group, respectively. Fat mass and fat cell size of adipose tissue were lower in HF-CSL group and HF-CSH group compared with HF-C group, and lower in HF-CSH group compared with HF-CSL group. Serum triglyceride, total cholesterol and LDL-cholesterol contents were markedly decreased by vegetable sprout powder containing diet, while the serum HDL-cholesterol and phospholipid contents were higher in vegetable sprout powder containing diet in a dose-dependent manner. Leptin and insulin levels in serum showed a decrease in HF-CSH group. Significantly increased contents of triglyceride, total cholesterol, LDL-cholesterol, leptin and insulin in the serum of HF-N group were returned to normal or even below normal levels by feeding 10% vegetable sprout powder diet. The increased activities of NADP-malate dehydrogenase (ME), glucose-6-phosphate dehydrogenase (G6PDH) and 6-phosphogluconate dehydrogenase (6PGDH) and lipoprotein lipase (LPL) in adiposetissue by HF-N group were decreased to the activity of normal fat group by feeding vegetable sprout powder in a dose-dependant manner. These results indicate that lipid metabolism in rats fed high-fat diet was suppressed by feeding vegetable sprout powder.

• Journal of Life Science
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• v.25 no.4
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• pp.456-462
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• 2015

We investigated the effects of fermented Sargassum thunbergii (FST) on platelet aggregation and serum lipid levels in rats made obese by a high fat diet. Six-week-old male SD-rats were randomly assigned to four groups as CON, HF-CON induced by high fat diet (HF), ST supplemented with HF (HFST100), and the fermented ST supplemented with HF group (HF-FST100). After 6 weeks, the results showed that the final weight and weight gain had decreased in the HF- FST100 group compared to the HF-CON group. Also, the food efficiency ratio was significantly reduced in the HF-FST100 group compared to HF-CON. The organ weights other than heart and spleen were significantly lower in the HF-FST100 group than in the HF-CON group. The levels of serum GOT and GPT significantly decreased in the HF-FST100 group over the HF-CON group. In addition, the total cholesterol, triglyceride and LDL-cholesterol levels were lower in the HF-FST100 group than in HF-CON, while the HDL-cholesterol level was higher in the HF-FST100. The ability of platelet aggregation of groups supplemented with FST was lower than the HF-CON group. These results suggest that FST may be beneficial in improving lipid profile and platelet aggregation in obesity.