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http://dx.doi.org/10.5757/JKVS.2009.18.1.030

Characteristics of Transparent Mim Capacitor using HfO2 System for Transparent Electronic Device  

Jo, Young-Je (Department of Materials Science and Metallurgical Engineering, Sunchon National)
Lee, Ji-Myon (Department of Materials Science and Metallurgical Engineering, Sunchon National)
Kwak, Joon-Seop (Department of Materials Science and Metallurgical Engineering, Sunchon National)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.1, 2009 , pp. 30-36 More about this Journal
Abstract
The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.
Keywords
MIM capacitor; $HfO_2$; TCO; Transparent capacitor;
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