• Journal of electromagnetic engineering and science
• /
• 제9권4호
• /
• pp.218-222
• /
• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.16-19
• /
• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Journal of Power Electronics
• /
• 제15권6호
• /
• pp.1489-1498
• /
• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• ETRI Journal
• /
• 제26권4호
• /
• pp.307-314
• /
• 2004

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

• Journal of electromagnetic engineering and science
• /
• 제2권1호
• /
• pp.56-58
• /
• 2002

In this paper, the double conversion gate mixer using a half-LO frequency is described at 25 GHz band. The proposed mixer uses two HEMTs excited by a single LO signal of half-LO frequency in order to generate the second IF signal. That is, the LO signal having the half-LO frequency is only fed into the gate of the first HEMT mixer as a normal gate mixer. The LO signal through the first mixer is find into the second mixer The proposed miler requires not only half of the normal LO frequency, but also lower LO power than the conventional subharmonically pumped milers. Over the bandwidth of 500 MHz at 24.5 GHz, the conversion gain is 2.5 dB, the noise figure is 9 dB, and the isolation between RF and LO port is 32 dB when the LO poller is 0 dBm at 12.65 GHz.

• 전자공학회논문지A
• /
• 제31A권9호
• /
• pp.114-120
• /
• 1994

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

• 전자공학회논문지A
• /
• 제32A권3호
• /
• pp.118-123
• /
• 1995

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.

• 한국통신학회논문지
• /
• 제25권10B호
• /
• pp.1701-1706
• /
• 2000

본 연구에서 GaAs pHEMT와 도파관-마이크로스트립 변환구조를 이용하여 38 GHz 대역 하이브리드 전력증폭기 모듈이 개발되었다. 10 mil duroid 기판이 전력증폭가와 도파관-마이크로스트립 변환구조 제작에 사용되었다. 제작된 도파관-마이크로스트립 변환구조는 32 - 40 GHz 대역까지 약 I dB 삽입손실(back to back)의 측정 결과를 보였다. 전력증폭기 모듈의 측정 결과, 36.8 - 38.5 GHz에서 대략 출력 전력 29 dBm(P1.5 dB), 전력 이득은 7.2 dB, PAE 는 11.2 % 였다.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2019년도 추계학술대회
• /
• pp.93-95
• /
• 2019

본 논문에서는 높은 스위칭 주파수에서의 SiC HEMT의 병렬 운전을 다룬다. 이를 위해 300 V/600 A SiC HEMT을 이용한 병렬 풀브릿지 시스템을 설계하고 검증한다. 병렬 운전시 발생하는 전류 불균형을 제한하기 위해 병렬 소자간 인덕턴스를 설계한다. 또한 최대 순시 손실을 계산하여 이를 방열할 수 있는 냉각 시스템을 구성한다. 더블 펄스 시험을 통해 설계된 시스템의 동적(dynamic) 전류 균형과 정적(static) 전류 균형을 평가한다. 60 kHz 스위칭 주파수에서의 500 Hz 600 A 교류 제어 실험을 통해 제어 성능과 순시 손실을 검증한다.

• Transactions on Electrical and Electronic Materials
• /
• 제12권4호
• /
• pp.148-151
• /
• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.