• Title/Summary/Keyword: HBTs

Search Result 59, Processing Time 0.024 seconds

Modeling of InP/InGaAs HPT with ITO Transparent Emitter Contact (ITO 투명전극을 갖는 InP/InGaAs HPTs 모델링)

  • Jang, Eun-Sook;Choi, Byong-Gun;Shin, Ju-Sun;Sung, Kyang-Su;Han, Kyo-Yong
    • Proceedings of the IEEK Conference
    • /
    • 2000.11b
    • /
    • pp.9-12
    • /
    • 2000
  • InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

  • PDF

New degradation mechanism of GaAs HBT induced by Hot carriers (핫 캐리어에 의한 GaAs HBT의 새로운 열화 메카니즘)

  • 권재훈;김도현;송정근
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.34D no.11
    • /
    • pp.30-36
    • /
    • 1997
  • AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

  • PDF

Formation of ITO ohmic contact to $n^{+}$-InP for InP/lnGaAs HPT's fabrication (InP/AnGaAs HPT's 제작을 위한 $ITO/n^+$-InP Ohmic contact 특성 연구)

  • 황용한;한교용
    • Proceedings of the IEEK Conference
    • /
    • 2001.06b
    • /
    • pp.213-216
    • /
    • 2001
  • The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.

  • PDF

10Gbit/s AlGaAs/GaAs HBT limiting amplifier (AlGaAs/GaAs HBT를 사용한 10Gbit/s 리미팅증폭기)

  • 곽봉신;박문수
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.34D no.7
    • /
    • pp.15-22
    • /
    • 1997
  • A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

  • PDF

Temperature Dependence of Electrical Characteristics of AIGaAs/GaAs Heterojunction Bipolar Transistors (AIGaAs/GaAs 이종접합 바이폴라 트랜지스터의 온도 변화에 따른 전기적 특성에 대한 연구)

  • 박문평;이태우;김일호;박성호;편광의
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1996.11a
    • /
    • pp.349-352
    • /
    • 1996
  • When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

  • PDF

High Reliable GaAs HBT with InGaP Ledge Emitter Structure (외부 베이스표면을 에미터 ledge로 포장한 InGaP/GaAs HBT의 신뢰도 향상)

  • 박재홍;박재운
    • Journal of the Korea Society of Computer and Information
    • /
    • v.5 no.4
    • /
    • pp.102-105
    • /
    • 2000
  • The self-aligned AICaAs/GaAs HBTs with the mesa-etched emitter showed severe degradation in current gain under stress. The cause was identified to be due to instability of the surface states on extrinsic base. In this paper the surface states were diminished by the hetero-passivation of the InGaP ledge emitter and the reliability was drastically improved. The activation energy of current gain degradation was extracted to be 1.97eV and MTTF to be 4.8$\times$108 at 14$0^{\circ}C$ which has satisfied MIL standards.

  • PDF

Electrical Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures (접합구조에 따른 AIGaAs/GaAs HBT의 전기적 특성에 관한 연구)

  • 김광식;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.63-66
    • /
    • 2000
  • In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

  • PDF

DC Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures (접합구조에 따른 AIGaAs/GaAs HBT의 DC 특성에 관한 연구)

  • 김광식;유영한;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.67-70
    • /
    • 2000
  • In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

  • PDF

밀리미터파 Transistors

  • 범진욱;송남진
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.11 no.2
    • /
    • pp.2-11
    • /
    • 2000
  • Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

  • PDF

Current Gain Enhancement in SiGe HBTs (SiGe HBT의 Current Gain특성 개선)

  • Song Ohsung;Yi Sandon;Kim Dugjoong
    • Proceedings of the KAIS Fall Conference
    • /
    • 2004.06a
    • /
    • pp.62-64
    • /
    • 2004
  • 초고속 RF IC의 핵심소자인 SiGe에피텍시층을 가진 이종양극트란지스터 (hetero junction bipolar transistor: HBT)를 0.35um급 CMOS공정으로 제작하였다. 이때 IOW $V_{BE}$영역에서의 Current Gain의 선형성을 향상시키기 위하여 Capping 실리콘의 두께를 200과 300${\AA}$으로 나누고 EDR (Emitter Drive-in RTA)의 온도와 시간을 900$\~$1000C, 0$\~$30sec로 각각 변화시키면서 최적조건을 알아보았다. 실험범위 내에서의 최적공정조건은 300${\AA}$의 capping 실리콘과 975C-30sec의 EDR조건이었다.

  • PDF