• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.276-279
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• 2015

This paper presents two 3-stage D-band stacked amplifiers developed in a $0.13-{\mu}m$ SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.10-12
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• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• ETRI Journal
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• 제32권1호
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• pp.151-153
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• 2010

A highly efficient linear and compactly integrated series-type Doherty power amplifier (PA) has been developed for wideband code-division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power-added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class-AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than -42 dBc over the whole output power range.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 춘계학술대회
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• pp.696-697
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• 2016

본 논문은 5.25-GHz BiCMOS 저 잡음 증폭기를 위한 바이어스 회로를 제안한다. 이러한 회로는 1볼트 전원에서 동작하며, 저전압 및 저전력으로 동작하도록 설계되어 있다. 제안한 회로는 $0.18{\mu}m$ SiGe HBT BiCMOS로 설계하였다. 이러한 회로는 밴드 갭 참조회로 (band-gap reference circuit)를 사용하였다.

• Journal of Microbiology
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• 제42권2호
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• pp.94-98
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• 2004

Phenanthrene is a three-ring polycyclic aromatic hydrocarbon and commonly found as a pollutant in various environments. Degradation of phenanthrene by white rot fungus Trametes versicolor 951022 and its laccase, isolated in Korea, was investigated. After 36 h of incubation, about 46％ and 65％ of 100 mg/l of phenanthrene added in shaken and static fungal cultures were removed, respectively. Phenanthrene degradation was maximal at pH 6 and the optimal temperature for phenanthrene removal was 30$^{\circ}C$. Although the removal percentage of phenanthrene was highest (76.7％) at 10 mg/1 of phenanthrene concentration, the transformation rate was maximal (0.82 mg/h) at 100 mg/L of phenanthrene concentration in the fungal culture. When the purified laccase of T. versicolor 951022 reacted with phenanthrene, phenanthrene was not transformed. The addition of redox mediator, 2,2'-azino-bis-(3-ethylbenzthiazoline-6-sulfonic acid) (ABTS) or 1-hydroxybenzotriazole (HBT) to the reac-tion mixture increased oxidation of phenanthrene by laccase about 40％ and 30％, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• 한국전자파학회지:전자파기술
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• 제11권2호
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• pp.2-11
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• 2000

밀리미터파 회로 제작에 필수적인 능동소자인 고 속 Transistor기술은 반도체 설계 및 공정기술의 발 전으로 급격히 발달하고 있다. 주로 GaAs계나 InP 계 III-V 화합물 반도체를 이용한 고주파 transistor 는 FET기반의 MODFET과 BJT기반의 HBT가 밀 리미터파 대역에서 응용된다. 전통적인 III-V족 반 도체 이외에 SiGe와 GaN 소자 기술 역시 급속한 발전을 이루고 있다. 본 논문에서는 밀리미터파 transistor 기술에 대한 기본적인 내용과 응용 예를 소개한다.

• 한국전자파학회지:전자파기술
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• 제11권2호
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• pp.52-62
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• 2000

이동통신의 발달로 가속화된 고주파 반도체 소자 기술 중 새로운 가능성을 가진 밀리미터파 대역의 주요 응용분야와 이를 위한 부품기술을 살펴보았다. 부품기술로는 LG종합기술원에서 개발된 최근의 결과들을 소개하면서 공정기술, 소자기술, 회로설계기술, 조립기술에 대해 알아보았다. 공정기술과 소자기술은 밀리미터파에서 주로 사용되는 HBT와 HEMT를 기준으로 살펴보고 회로설계기술은 기존의 GHz 대역의 설계기술과 밀리미터파 회로 설계기술의 차이점을 언급하였다. 조립기술에 대해서는 일반적으로 MMIC 회로를 제작할 때 사용하는 마이크로스트립 전송선로를 밀리미터파 응용에서 주로 이용하는 도파관에 연결하기 위한 변환구조를 중심으로 설명하였다. 또한 국내외 타 기관에서 이루어지고 있는 이 분야에 대한 기술개발 노력과 연구동향에 대해서도 간단히 알아보았다.

• 전자통신동향분석
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• 제33권6호
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• pp.34-40
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• 2018

Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.