• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.11a
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• pp.409-409
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• 2004

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.11a
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• pp.420-420
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• 2004

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.11a
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• pp.410-410
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• 2004

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.461-461
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• 2004

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.368-373
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• 2001

Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$ for 10 seconds. However, the specific contact resistivity decreased remarkably to $1.7\times10^{-6}\Omega\textrm{cm}^2$ and $2\times10^{-6}\Omega\textrm{cm}^2$ at $375^{\circ}C$/60sec and $425^{\circ}C$/10sec, respectively. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained even at $450^{\circ}C$, therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• The Korean Journal of Physiology and Pharmacology
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• v.18 no.3
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• pp.191-200
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• 2014

We investigated the anxiolytic-like activity of ${\alpha}$-asarone (AAS) from Acorus gramineus in an experimental rat model of anxiety induced by repeated administration of the exogenous stress hormone corticosterone (CORT). The putative anxiolytic effect of AAS was studied in behavioral tests of anxiety, such as the elevated plus maze (EPM) test and the hole-board test (HBT) in rats. For 21 consecutive days, male rats received 50, 100, or 200 mg/kg AAS (i.p.) 30 min prior to a daily injection of CORT. Dysregulation of the HPA axis in response to the repeated CORT injections was confirmed by measuring serum levels of CORT and the expression of corticotrophin-releasing factor (CRF) in the hypothalamus. Daily AAS (200 mg/kg) administration increased open-arm exploration significantly in the EPM test, and it increased the duration of head dipping activity in the HBT. It also blocked the increase in tyrosine hydroxylase (TH) expression in the locus coeruleus (LC) and decreased mRNA expression of brain-derived neurotrophic factor (BDNF) and its receptor, TrkB, in the hippocampus. These results indicated that the administration of AAS prior to high-dose exogenous CORT significantly improved anxiety-like behaviors, which are associated with modification of the central noradrenergic system and with BDNF function in rats. The current finding may improve understanding of the neurobiological mechanisms responsible for changes in emotions induced by repeated administration of high doses of CORT or by elevated levels of hormones associated with chronic stress. Thus, AAS did exhibit an anxiolytic-like effects in animal models of anxiety.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.470-475
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• 2002

The effects of the conditions of the collector formation on electrical characteristics of the packaged SiGe hetero-junction bipolar transistors (HBT) were investigated. While the DC characteristics of SiGe HBTs such as IV characteristic, forward current gain, Early voltage, and breakdown voltage were hardly changed after packaging, the AC characteristics such as $f_{\tau}\; and\; f_{max}$ were degraded severely. With the rise of the collector concentration, the break-down voltage decreased but the $f_{\tau}$ increased. Additionally, $\beta$ and $f_{\tau}$ values were kept high in the range of elevated collector current due to the increase of the critical current density for the onset of the Kirk effect. The devices As implanted before the collector deposition showed lower breakdown voltage and higher $f_{\tau}$ than the others, which seems to be originated from the As up-diffusion resulting in the thinner collector.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.201-206
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• 2002

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.18-27
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• 2004

In this paper, we presents an analytical simulation procedure for evaluation in baseband digital modulated signals distortions in the present of RF power amplifier(SSPA) nonlinear behavior and backoff operations of OFDM wireless transmission system. we obtained the optimum nonlinear transfer function of designed SSPA with the SiGe HBT bias currents of OFDM multi-channel wireless transmission system and compared this transfer function to SSPA nonlinear modeling functions mathematically, we finds optimum bias conditions of designed SSPA. With the derived nonlinear modeling function of SSPA, We analysed the PSD characteristics of in-band and out-band output powers of SSPA EVM measurement results of distorted constellation signals with the input power levels of SSPA. The results of paper can be applied to find the SSPA linearly with optimum bias currents and determine the SSPA input backoff bias for AGC control circuits of SSPA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.199-207
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• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.