• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Communications of the Korean Mathematical Society
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• v.33 no.2
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• pp.527-533
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• 2018

Let $\mathcal{X}$ be a countably generated Hilbert module over a locally $C^*$-algebra $\mathcal{A}$ in multiplier module M($\mathcal{X}$) of $\mathcal{X}$. We propose the necessary and sufficient condition such that a sequence $\{h_n:n{{\in}}\mathbb{N}\}$ in M($\mathcal{X}$) is a standard frame of multipliers in $\mathcal{X}$. We also show that if T in $b(L_{\mathcal{A}}(\mathcal{X}))$, the space of bounded maps in set of all adjointable maps on $\mathcal{X}$, is surjective and $\{h_n:n{{\in}}\mathbb{N}\}$ is a standard frame of multipliers in $\mathcal{X}$, then $\{T{\circ}h_n:n{\in}\mathbb{N}}$ is a standard frame of multipliers in $\mathcal{X}$, too.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Membrane Journal
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• v.10 no.2
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• pp.55-65
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• 2000

The porous silica membrane was prepared from Si(${OC}_2H_5)_4-H_2O$ system by sol-gel method. To investigate the characteristics of gels and porous silica membrane, we examined gels and porous silica membrane using TG-DTA, X-ray diffractometer, IR spectrophotometer, BET, SEM and TEM. The optimum mole ratio of Si(OC$_2$H$_{5}$)$_4$ : $H_2O$ $C_2$H$_{5}$OH for porous silica membrane was 1 : 4.5 : 4. The porous silica membrane was obtained by heat treatment of the gel above 700 $^{\circ}C$. The specific surface area of sintered gel was 3.8 $m^2$/g to 902.3 $m^2$/g at 100 $^{\circ}C$ to 1100 $^{\circ}C$ The pore size of sintered gel was in the range 20 $\AA$~ 50$\AA$. The particle size of sintered gel was 15 nm to 30 nm at 30$0^{\circ}C$ to 700$^{\circ}C$. The performance of the porous silica membrane was investigated for the separation of $H_2$/$N_2$ gas mixture. Gas separation through porous silica membrane depends upon Knudsen flow and surface flow. The veal separation factor($\alpha$) of $H_2$/$N_2$ was 5.17 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$), and tail separation factor( $\bar{B}$) increased as the pressure of permeation cell Increased.sed.

• Nuclear Engineering and Technology
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• v.9 no.1
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• pp.39-44
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• 1977

The configuratior and conformation of N-methyl-C-phenylalkyl-ketimine isomers, Ph-CR=N$CH_3$ (R=H, $CH_3$, $CH_3$CH$_2$), have been studied from extended Huckel molecular orbital calculations. The result shows that the E-configuration of the C=N double bond is favored compared with that of the Z-configuration. The most preferable conformation of the phenyl ring rotamer in N-methyl-C-phenylaldimine and N-methyl-C-phenylmethylketimine are the coplanar forms with regard to the C=N plane, but the conformation of the $CH_3$CH$_2$-rotamer, in N-methyl-C-phenylethyl-ketimine, the gauche form (dihedral angle between C=N and $CH_3$CH$_2$- plane=90$^{\circ}$) is favored.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.1
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• pp.41-48
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• 2008

Fermentative $H_2$ production was studied using microbial consortia isolated from heat-treated ($90{\circ}C$, 20 min) sewage sludge. Important parameters investigated were carbon(C) and nitrogen(N)-sources, C/N ratio, phosphate concentration, pH and temperature during anaerobic cultivation in serum bottles. Starch, ribose, sucrose and glucose were good C-sources for the culture growth and $H_2$ production. Yeast extract was better N-source than $(NH_4)_2SO_4$ or peptone when individually added to the synthetic media, however the combination of above three N-sources exhibited the additional effect for cell growth and $H_2$ evolution. Addition of 100 mM phosphate as a buffering agent prevented the rapid pH drop during the cultivation. The optimum initial pH for the cell growth was at 7.0, whereas $H_2$ production was observed at pH 5.5. Optimum temperature for the cell growth and $H_2$ production was $37{\circ}C$. Initial C/N ratio of 1.22 in the media using glucose and yeast extract as the C- and N-sources, respectively, showed the $H_2$ yield 1.0 mol $H_2$/mol glucose.

• Journal of the Korean Chemical Society
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• v.32 no.4
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• pp.390-405
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• 1988

The chlorination of $C_7H_16,\;C_8H_18,\;C_10H_22,\;and\;(Me_2CH)_2$ with N-Chlorosuccinimide, tert-BuOCl, $CCl_3SO_2Cl,\;CCl_4,\;CCl_3SCl,\; PCl_5,\;and\;Cl_2\;in\;C_6H_6\;or\;CS_2$ which both form loose complexes with $Cl_2$ atoms yielded mixtures of isomeric monochloroalkanes which were analyzed quantitatively. An isomer ratio differing from that known for the substitution of paraffinic hydrocarbons was observed. The isomer distribution observed is the result of the combined effects of the differing C-H dissociation energies of the different types of H atoms of the alkane and of the free energy of the attacking radical with polar effects of the attacking radical as well as of the hydrocarbon.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Journal of the Korean Chemical Society
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• v.39 no.6
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• pp.434-439
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• 1995

Six-coordinate molybdenum(Ⅴ)-oxo complexes, (R4N)[MoO(NCS)2L](R=CH3, C2H5, n-C4, H9) with S-methyl-3-(2-hydroxy-x-phenyl)methylenedithiocarbazate(L1: x=5-H) and its derivatives (L2:x=5-CH3, L3: x=3-CH3O, L4: x=5,6-C4H4 and L5: x=5-NO2) have been synthesized and the structural, spectral and electrochemical properties of the complexes have been characterized by elemental analysis, molar conductivity, UV-Vis, IR, 1H NMR, and CV (cyclic voltammetry).

• Fisheries and Aquatic Sciences
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• v.18 no.4
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• pp.373-378
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• 2015

Postprandial ammonia excretion and oxygen consumption in olive flounder Paralichthys olivaceus fed two different feed types, moist pellet (MP) and expanded pellet (EP) diets, to satiation were determined at $12^{\circ}C$, $15^{\circ}C$, $20^{\circ}C$, and $25^{\circ}C$ for 48 h. The ammonia excretion and oxygen consumption rates increased with increasing water temperature. However, the postprandial times for the maximum rates of ammonia excretion and oxygen consumption were shortened from 12 h to 6 h after feeding with increasing water temperature. The ammonia excretion and oxygen consumption rates of the fish fed EP were significantly higher (P < 0.05) than those fed MP at 12 h post-feeding both for $12^{\circ}C$ and $15^{\circ}C$. The highest (P < 0.05) weight-specific ammonia excretion rates at $12^{\circ}C$ were observed in the fish fed EP and MP at $12.1mg\;NH_3-N\;kg^{-1}h^{-1}$ and $8.7mg\;NH_3-N\;kg^{-1}h^{-1}$, respectively, for 12 h and 9 h after feeding. The highest (P < 0.05) weight-specific oxygen consumption rates at $12^{\circ}C$ were observed in fish fed EP and MP at $116.4mg\;kg^{-1}h^{-1}$ and $101.0mg\;kg^{-1}h^{-1}$, respectively, for 12 h after feeding. The highest ammonia excretion rates at $25^{\circ}C$ in the fish fed EP and MP increased to $16.9mg\;NH_3-N\;kg^{-1}h^{-1}$ and $18.3mg\;NH_3-N\;kg^{-1}h^{-1}$, respectively, for 6 h after feeding. The highest (P < 0.05) weight-specific oxygen consumption rates at $25^{\circ}C$ were observed in fish fed EP and MP at $184.3mg\;O_2kg^{-1}h^{-1}$ and $197.3mg\;O_2kg^{-1}h^{-1}$, respectively. These data are valuable for the design of biofilters and development of effluent treatment technologies for the land-based flounder farms.