• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.387-390
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• 1988

The increases in the packing density and the resulting shrinkage of silicon integrated circuit dimensions led to the investigation and successful of the deposited silicide layers as the gate and interconnection and contact metallization. In this paper evaporated Co films on n-Si have been rapid thermal annealed in $N_2$ambient at temperature of $400^{\circ}C-1000^{\circ}C$. The Co silicide formation is characterized by sheet resistance (4PP). Also, silicide growth rate and its reproductivity has been examined by SEM.

• Journal of Power System Engineering
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• v.11 no.1
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• pp.45-50
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• 2007

Acoustic emission technology is applied to diagnosis the internal leak and operating conditions of the major valves at nuclear power plants. The purpose of this study is to verify availability of the acoustic emission as in-situ diagnosis method. In this study, acoustic emission tests are performed when the pressurized high temperature steam flowed through gate valve(1st stage reheater valve) and glove valve(main steam dump valve) on the normal size of 4 and 8". The valve internal leak diagnosis system for practical field was designed. The acoustic emission method was applied to the valves at the site, and the background noise was measured for the abnormal plant condition. To improve the reliability, a judgment of leak on the system was used various factors which are AE parameters, trend analysis, signal level analysis and RMS(root mean square) analysis of acoustic signal emitted from the valve operating condition internal leak.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.356-357
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• 2008

The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• Proceedings of the KSR Conference
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• 2003.05a
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• pp.468-473
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• 2003

CCTV network has been implemented to transmit the image information of platfo gate and transfer section to local headquarters in the KNR(Korean National Railroa But. communication system for transferring image information around accident field has not been established yet. thus, at present implementation of communication equipment is necessary for dyn of unspecified accident to be transmitted to headquarters. Copper cable communication network is run by KNR, but it is processing installatio optics cable in connection with the implemental plan for high-speed network from n And, the capacity of communication channel will be guaranteed much more than een station and station, station and central headquarters when fiber optics cable is This study analyzes the image equipment of field for transmission and estimated m transmit image information of accident field to headquarters with using communicat ucture. And, the study considers implemental method of communication network for nce image transmission from dozens to hundreds kilometers.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.665-670
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• 2005

This paper introduces the propulsion system(Motor Block) stabilization test result for Korean High Speed Railway(HSR). The developed propulsion system using high power semiconductor, IGCT(Integrated Gate Commutated Thyristor) consists of two PWM converter and VVVF inverter. In this paper, overall configuration of propulsion system is briefly described and stabilization tests are made to verify the developed propulsion system. The presented test results shows beatless control method of inverter output current at the 200km/h and performance test of BCH.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.42-44
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• 2003

최근 logic 소자의 gate oxide로 기존의 $SiO_2$, SiON보다 고유전, 작은 누설전류를 가지는 물질의 개발이 중요한 이슈가 되고 있다. 본 실험실에서는 Si 기판위에 $HfO_2$ 를 바로 증착하는 경우, 기판의 Si 이박막내로 확산하여 유전율이 저하되는 문제점을 인식하고, 기판과 $HfO_2$ 사이에 $AlO_x$를 방지막으로 사용하였다. 이 때, $AlO_x$의 Al precursor 는 TMA 로 고정하고, 산화제로는 $H_2O, O_2$-plasma, O_3$ 를 각각 사용하였다. 모든 $AlO_x/HfO_y$ 박막에서 매우 우수한 누설전류특성을 얻을 수 있었는데, 특히 $O_3$ 를 산화제로 사용한 $AlO_x$ 방지막의 경우 가장 우수한 특성을 보였다. 또한 질소 분위기에서 $800^{\circ}C$ 10 분간 열처리한 후, 방지막을 사용한 모든 경우에서 보다 향상된 열적 안정성을 관찰할 수 있었다.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1063-1066
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• 2000

ln this paper, a new active phase shifter is proposed using a vector sum method, and it is shown that the proposed phase shifter is more efficient than the others in size, power, number of circuits, and gain. Also a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using dual gate FETs (DGFETs). Furthermore, it is also shown that the proposed scheme is more efficient and works properly with the digital phase control method.