• Title/Summary/Keyword: H-beam

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Experimental Verification on Dynamic Responses of a Cantilevered Beam under a Moving Mass with Accelerations (가속을 갖는 이동질량에 의한 외팔보의 동적응답에 관한 실험적 검증)

  • Kim, H.J.;Ryu, B.J.;Kim, H.J.;Yoon, C.S.
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.11a
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    • pp.307-310
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    • 2004
  • The paper presents the numerical and experimental results for the dynamic response vibration of a cantilevered beam subjected to a moving mass with variable speeds. Governing equations of motion under a moving mass were derived by Galerkin's mode summation method taking into account the effects of all forces due to moving mass, and the numerical results were calculated by Runge-Kutta integration method. The effects of the speed, acceleration and the magnitude of the moving mass on the response of the beam are fully investigated. In order to verify numerical results, some experiments were conducted, and the numerical results have a little difference with the experimental ones.

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Interfacial Stress Concentrations of Vertical Through-plate to H-beam Connections in CFT Column

  • Choi, Insub;Chang, HakJong;Kim, JunHee
    • International Journal of High-Rise Buildings
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    • v.9 no.4
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    • pp.325-334
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    • 2020
  • This paper aims to evaluate the interfacial stress concentrations on connection between vertical through-plate and H-beam in CFT column. Full-scale experiments were performed on three specimens with varying thickness of the vertical through-plate to investigate the interfacial stress concentration factor in the connections. The specimens underwent brittle failure at the location where the steel beam is connected to the vertical through-plate before the steel beam reached its plastic moment. The strain data of the part were analyzed, and the sectional analyses were conducted to determine appropriate residual stress models. In addition, the stress concentration factor was quantified by comparing the analytical local behavior in which the stress concentration is not reflected and the experimental data reflecting the stress concentration. The results showed that the maximum reduction of the stress concentration factor due to an increase in the thickness of the vertical through-plate is 50.3%.

Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • Yun, Jang-Won;Jang, Jin-Nyeong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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Study on the Fire Behaviour of Composite Beam (H형강 합성보의 화재거동에 관한 실험적 연구)

  • Kim, Sung-Bae;Choi, Seung-Kwan;Han, Sang-Hoon
    • Fire Science and Engineering
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    • v.22 no.2
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    • pp.84-90
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    • 2008
  • This paper aims to experimentally investigate the in-fire performance of composite beams with respect to the effects of load ratio and shear interaction. Under a Standard ISO834 fire, the development of temperature and deflection of simply supported composite beams were recorded. In particular, the transition of temperature distribution across the cross-section. The fire resistance of composite beam was interpreted regarding the level of shear interaction.

A Study on Discharge Electrode Formation for PDP with Ion Beam Assisted DC Planar Magnetron Sputtering Device (Ion Beam Assisted DC Planar Magnetron Sputtering 장치에 의한 PDP용 방전전극 형성에 관한 연구)

  • Kim, J.H.;Son, J.B.;Shin, J.H.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1791-1793
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    • 1998
  • The thin film metal electrode for PDP needs low resistivity and strong adhesion. But the sputtered copper film is weak, in the adhesion between copper and glass. In this paper, we investigated the characteristics of resistivity and adhesion about Cu thin film using Ion Beam Assisted DC Planar Magnetron Sputtering(DCPM) Device.

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Characteristic Evaluation of Vacuum Chamber for EBM System (전자빔 가공시스템용 진공환경의 성능평가)

  • Kang J.H.;Lee C.H.;Choi J.H.;Lim Y.B.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.934-937
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    • 2005
  • It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, proper chamber with high vacuum condition is necessarily required more than anything else to modify scanning electron microscope. In this study, special chamber unit using rotary pump and diffusion pump to obtain high vacuum degree was designed and manufactured and various evaluation tests fur recognize the vacuum characteristic were accomplished.

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The Effect of Unprecracked Hydride on the Growth and Carbon Incorporation in GaAs Epilayer on GaAs(100) by Chemical Beam Epitaxy

  • 박성주;노정래;하정숙;이을항
    • Bulletin of the Korean Chemical Society
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    • v.16 no.2
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    • pp.149-153
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    • 1995
  • We have grown GaAs epilayers by chemical beam epitaxy(CBE) using unprecracked hydrides and metal organic compounds via a surface decomposition process. This result shows that unprecracked arsine (AsH3) or monoethylarsine (MEAs) can be used in chemical beam epitaxy(CBE) as a replacement of a precracked AsH3 source in CBE. It was also found that the uptake of carbon impurity in epilayers grown using trimethylgallium(TMG) with unprecracked AsH3 or MEAs was significantly reduced compared to that in epilayers grown by CBE process employing TMG and arsenics produced from precracked hydrides. We propose a surface structural model suggesting that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from hydride sources were also considered to hinder carbon atoms from being incorporated into the epilayers or to remove other carbon containing species on the surface.

Transient dynamic analysis of sandwich beam subjected to thermal and pulse load

  • Layla M. Nassir;Mouayed H.Z. Al-Toki;Nadhim M. Faleh;Hussein Alwan Khudhair;Mamoon A.A. Al-Jaafari;Raad M. Fenjan
    • Steel and Composite Structures
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    • v.51 no.1
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    • pp.1-8
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    • 2024
  • Transient dynamic behavior of a sandwich beam under thermal and impulsive loads has been researched in the context of higher-order beam theory. The impulse load of blast type has been enforced on the top exponent of the sandwich beam while it is in a thermal environment. The core of the sandwich beam is cellular with auxetic rectangular pattern, whereas the layers have been built with the incorporation of graphene oxide powder (GOP) and are micromechanically introduced through Halpin-Tsai formulization. Governing equations for the sandwich beam have been solved through inverse Laplace transform style for obtaining the dynamical deflections. The connection of beam deflections on temperature variability, GOP quantity, pulse load situation and core relative density has been surveyed in detail.