• 대한전자공학회논문지TC
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• 제47권6호
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• pp.26-34
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• 2010

기판 크기가 유한하면 두 패치안테나간의 상호결합은 기판 가장자리에서 회절되어 들어오는 표면파에 의해 영향을 받는다. 상호결합이 최소가 되는 패치안테나 중심과 기판 가장자리까지의 거리는 접지된 기판의 유효 유전상수에 의해 결정됨을 알 수 있었다. 상호결합이 최소화되는 기판 크기는 이미지 방법을 사용하여 쉽게 계산 할 수 있다. 이미지 방법으로 계산한 최적화된 기판 크기와 전산모의 결과로 얻어진 최적화된 기판 크기가 잘 일치하였다.

• 전자공학회논문지
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• 제50권5호
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• pp.39-49
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• 2013

유한한 기판 크기가 H-평면 마이크로스트립 선형 위상 배열 안테나의 방사 특성에 미치는 영향에 대하여 연구하였다. 서로 다른 유전상수를 가지는 기판을 이용하여 여러 가지 안테나 소자 간 간격과 기판 크기를 가지는 5 소자 H-평면 선형 배열 안테나의 빔 주사각도에 따른 방사 특성을 살펴보았다. H-평면 선형 배열 안테나의 방사 특성이 향상되는 단위 안테나의 중심에서 E-평면 기판 가장자리까지의 거리를 도출하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.

• Bulletin of the Korean Chemical Society
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• 제24권7호
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• 디지털융복합연구
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• 제11권10호
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• pp.395-401
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• 2013

응급 상황이 발생하면, 주어진 응급관리 정보 시스템(EMIS)에 의하여 응급차가 출동한다. 그러나 기존 EMIS의 문제점은 전문 의료인과 응급차 간의 신뢰성 높은 의사소통에 주안점을 두지 않아서 불필요한 사망자를 초래했다는 점이다. 본 논문에서는 이와 같은 단점을 해결하기 위해 고신뢰성 응급관리 정보 시스템인 HEMIS(Highly-reliable Emergency Management Information System)를 제시한다. 평가 결과, HEMIS는 기존의 EMIS에 비해 데이터 압축, 데이터 안전성 그리고 QoS면에서 우수하다는 것을 알 수 있었다. 그러므로 HEMIS는 응급차 내에서 의료 서비스 질을 높임과 동시에 응급차로 이동하면서 사망자 수를 줄일 것으로 기대된다.

• 대한전자공학회논문지TC
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• 제48권5호
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• pp.46-53
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• 2011

유한한 기판크기가 E-평면으로 배열된 선형 위상 배열 안테나의 방사 특성에 미치는 영향을 연구하였다. 여러 가지 기판 크기에 따른 active reflection coefficient 와 average active element pattern 으로부터 선형 배열안테나의 방사특성을 예측하였다. E-평면과 만나는 기판 가장자리까지의 거리 변화가 H-평면과 만나는 기판 가장자리까지의 거리 변화에 비해 위상 배열 안테나의 방사 패턴 특성에 미치는 영향이 큰 것을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.812-814
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• 2004

AC loss is one of the important parameters in (High Temperature Superconducting)HTS AC devices. Among the HTS AC power devices, the transformer is the essential part in the electrical power system. But unfortunately, the transformer is the worst HTS device concerning AC loss because of very large magnetization loss due to high magnetic field applied to the HTS wire. We calculated the magnetization losses in HTS pancake windings for transformer according to the operating temperature. Two kinds of arrangement of HTS pancake windings were adopted for calculation of AC losses of a shell type transformer, and the analysis results were presented and discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.107-108
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• 2006

High $J_c$ $YBa_2Cu_3O_x$, superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. DCA-MOD precursor solution was coated on a single crystal (001) $LaAlO_3$(LAO) substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ and Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. A High critical current density ($J_c$) of 1.28 $MA/cm^2$ (@77 K and self-field) was obtained for the YBCO film prepared using 2-methoxyethanol as a solvent.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2001-2003
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• 2005

Various organic acid were used in order to prepare new metalorganic deposition solution for high quality $REBa_2Cu_3O_{7-{\delta}}$ (RE=Y, Eu, Gd) films. Prepared fluorine free MO precursor solution was coated on single crystal (001) $LaAlO_3$ (LAO) by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature etc havebeen controlled in order to make high $J_c$ films with a good epitaxial relationship with substrate. 0.5 micron-thick film was obtained by single coating and no crack appeared after calcination. Oxygen partial pressure was varied in the range of $100{\sim}1,000 ppm$ and conversion heat treatment was carried out at the temperature of $725{\sim}765^{\circ}C$. A critical transition temperature $(T_{c0})$ of 90K and a critical transport current density $(J_c)$ of $>0.5MA/cm^2$ (77K and self-field) were demonstrated for the YBCO film on (001) oriented LAO substrates with a thickness of 0.5 micron. $I_c$ was determined by utilizing a transport measurement. SEM and XRD investigations confirmed that films were grown epitaxially onto the LAO single crystal substrate. It is thought that fluorine free new MOD solutionis promising for high quality REBCO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.33-34
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• 2006

The effects of Ba and Ce addition has been investigated in YBCO prepared by trifluoroacetate (TFA) metalorganic depostition (MOD) method. Precursor solutions with cation ratios of Y:Ba:Cu:Ce = 1:2+x:3:x (x = 0, 0.05, 0.1 and 1.5) have been prepared by adding an excess amount of cerium and barium. Coated film was calcined at lower temperature and conversion heat treatment at temperature of $780{\sim}810^{\circ}C$. It has been shown that the critical current (Ic) of YBCO film was degraded by doping of Ba and Ce atoms. But Ic was increased as the amount of doped Ba and Ce content increased from 5 % to 15 %. It was observed that there was little increase of a flux pinning force with Ba and Ce addition in YBCO film prepared by TFA-MOD process.