• Title/Summary/Keyword: Growth temperature reduction

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Influence of Air Temperature and Soil Moisture Conditions on the Growth and Yield of Hot Pepper under a Plastic Tunnel Culture (고추의 비가림재배 시 온도와 토양수분 환경이 생육 및 수량에 미치는 영향)

  • Lee, Hee Ju;Lee, Sang Gyu;Choi, Chang Sun;Kim, Jun Hyeok;Kim, Sung Kyeom;Jang, Yun Ah;Lee, Sang Jung
    • Journal of Environmental Science International
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    • v.24 no.6
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    • pp.769-776
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    • 2015
  • This study was conducted to determine the effects of high temperature and deficit irrigation on growth and yield of hot pepper. Hot pepper was subjected to four irrigation treatments: fully irrigation (FI), 10, 20, and 30 days deficit irrigation (DI) combination with high temperature treatment. Control plants were grown natural environment and conventional culture methods. The plant height treated with high temperature was significantly higher than that of control plant. At FI combination with high temperature treatment, growth parameters such as stem diameter, leaf area, fresh and dry weight were the greatest. The yield was the greatest (2,036 kg/10a) under control, DI combination with high temperature treatment decreased by approximately 42% compare with FI combination with high temperature treatment. The number of abnormal fruits was approximately 38/plant under control, which was the smallest and that of 30 days DI combination with high temperature was higher 3.3 times compare with control. Flower abscission and calcium deficiency induced by DI treatments, especially those physiological disorder promoted by increasing DI treatments period. Results indicated that yield of hot pepper reduced by DI treatments, these results suggest that the growers should irrigate to proper soil moisture for preventing reduction of total fruit yield.

Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter (스퍼터로 성장된 알루미늄 박막의 공정 변수와 박막 두께에 따른 물성)

  • Oh, Il-Kwon;Yoon, Chang Mo;Jang, Jin Wook;Kim, Hyungjun
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.438-443
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    • 2016
  • We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

Synthesis of nickel fine powder in the mixed solvent of water and ethanol and ie oxidation behaviors (물과 에탄올의 혼합용매로부터 니켈 미분말의 합성 및 산화특성)

  • 이상근;최은영;이윤복;김광호;박희찬
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.3
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    • pp.139-144
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    • 2003
  • Nickel fine powders were prepared from nickel chloride aqueous solution containing ethanol as an organic solvent, and their oxidation behaviors were investigated. The reduction reaction by hydrazine from nickel chloride aqueous solution containing ethanol depend on reaction temperature. The reduction reaction time by hydrazine decreased with the increase of reaction temperature. By controlling reaction temperature, the products could be obtained spherical particles in the range of 0.1 $\mu\textrm{m}$~1.0 $\mu\textrm{m}$. Also, As reaction temperature increased from $40^{\circ}C$ to $80^{\circ}C$, the particle size slightly increased and had a broad size distribution owing to the presence of the coarse particles. The mean particle size and specific surface area of nickel powders prepared at $60^{\circ}C$ were 0.3 $\mu\textrm{m}$ and 31.8 $\m^2$/g, respectively. Weight loss of the powders at $300^{\circ}C$ was due to composition of $_Ni(OH)2$. In case of heat treatment at $200^{\circ}C$ in air, oxidation resistance of nickel powders was remarkable than that of as-synthesized.

Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

  • Park, Seong-Ju;Ro, Jeong-Rae;Sim, Jae-Ki;Lee, El-Hang
    • ETRI Journal
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    • v.16 no.3
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    • pp.1-10
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    • 1994
  • Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

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Effects of thermal boundary conditions and microgravity environments on physical vapor transport of $Hg_2Cl_2-Xe$ system

  • Kim, Geug-Tae;Kwon, Moo-Hyun;Lee, Kyong-Hwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.4
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    • pp.172-183
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    • 2009
  • For the effects of the nonlinear temperature profiles and reduced-gravity conditions we conduct a two-dimensional numerical modeling and simulations on the physical vapor transport processes of $Hg_2Cl_2-Xe$ system in the horizontal orientation position. Our results reveal that: (1) A decrease in aspect ratio from 5 to 2 leads to an increasingly nonuniform interfacial distribution and enhances the growth rate by one-order magnitude for normal gravity and linear wall temperature conditions. (2) Increasing the molecular weight of component B, Xenon results in a reduction in the effect of solutal convection. (3) The effect of aspect ratio affects the interfacial growth rates significantly under normal gravity condition rather than under reduced gravitational environments. (4) The transition from the convection-dominated regime to the diffusion-dominated regime ranges arises near at 0.1g$_0$ for operation conditions under consideration in this study.

Vertically Standing Graphene on Glass Substrate by PECVD

  • Ma, Yifei;Hwang, Wontae;Jang, Haegyu;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.232.2-232.2
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    • 2014
  • Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

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Reduction of Grain Growth for Al6061 Alloy by the Die Cooling System in Hot Extrusion Process (Al6061 합금의 열간 압출공정에서 금형 냉각시스템에 의한 압출재의 결정립 성장 제어)

  • Ko, Dae-Hoon;Lee, Sang-Ho;Ko, Dae-Cheol;Kim, Ho-Kwan;Kim, Byung-Min
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.7
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    • pp.673-680
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    • 2009
  • In this study, die cooling system using the nitrogen gas has been applied to hot aluminum extrusion process for refining grains and reducing of grain growth. Computational fluid dynamics(CFD) has been carried out to evaluate die cooling effect by nitrogen gas, and the results of CFD have been used to FE-simulation for the prediction of the extrudate temperature in hot extrusion process. Experimental hot extrusion has been performed to observe microstructure and to measure temperature of extrudate. The results of FE-Simulation have been good agreement with those of experiment. Finally, process condition of hot extrusion can be established to reduce grain growth of Al6061 through the experiment.

Modeling of Cementite Precipitation Kinetics on Solute Carbon Content in Extra and Ultra Low Carbon Steels (극저탄소강의 고용 탄소 함량에 미치는 시멘타이트 석출 속도 모델링)

  • Choi, Jong Min;Park, Bong June;Kim, Sung Il;Lee, Kyung Sub;Lee, Kyung Jong
    • Korean Journal of Metals and Materials
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    • v.48 no.3
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    • pp.187-193
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    • 2010
  • The solute carbon content in ferrite is one of the important factors to obtain good formability in low carbon steels. Although most of the carbons are consumed by the formation of grain boundary cementite during coiling after hot-rolling, the carbon content after coiling is normally observed much more than that of equilibrium. In this study, a classical nucleation and growth model is used to simulate the precipitation kinetics of the grain boundary cementite from coiling temperature (CT) to room temperature (RT). The predicted precipitation behaviors depending on the initial carbon content and the cooling rate are compared with the reported. As a result, the lateral growth of thickening of cementite is a major factor for the sluggish reaction of grain boundary cementite. The reduction of solute carbon content after coiling is divided into three regions: a) increase due to no cementite precipitation, b) decrease due to the fast length-wise growth of cementite, c) increase due to the slow thickness-wise growth of cementite.

Abnormal Coating Buildup on Si Bearing Steels in Zn Pot During Line Stop

  • Weimin Zhong;Rob Dziuba;Phil Klages;Errol Hilado
    • Corrosion Science and Technology
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    • v.23 no.2
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    • pp.83-92
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    • 2024
  • A hot-dip simulator was utilized to replicate abnormal coating buildup observed during line stops at galvanize lines, assessing the influence of processing conditions on buildup (up to 14 mm/side). Steel samples from 19 coils (comprising IF, BH, LCAK, HSLA, DP600-DP1180, Si: 0.006 - 0.8 wt%, P: 0.009 - 0.045 wt%) were examined to explore the phenomenon of heavy coating growth. It was discovered that heavy coating buildup (~3 mm/h) and rapid strip dissolution (~0.17 mm/h) in a GA or GI pot can manifest with specific combinations of steel chemistry and processing conditions. The results reveal the formation of a unique coating microstructure, characterized by a blend of bulky Zeta crystals and free Zn pockets/networks due to the "Sandlin" growth mechanism. Key variables contributing to abnormal coating growth include steel Si content, anneal temperature, dew point in heating and soaking furnaces, Zn pot temperature, Zn bath Al%, and cold-rolling reduction%. At ArcelorMittal Dofasco galvanize lines, an automatic online warning system for operators and special scheduling for incoming Si-bearing steels have been implemented, effectively preventing further heavy buildup occurrences.

Morphologically Controlled Growth of Aluminum Nitride Nanostructures by the Carbothermal Reduction and Nitridation Method

  • Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • v.30 no.7
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    • pp.1563-1566
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    • 2009
  • One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.