• Title/Summary/Keyword: Growth simulation

Search Result 1,084, Processing Time 0.026 seconds

Knowledge Management Systems Simulation Model for Measuring Knowledge Growth Potentials (지식성장 잠재력 측정을 위한 동태적 지식경영시스템 시뮬레이션 모델 개발에 관한 연구)

  • Kim, Sang-Wook;Jo, Hyun-Woong
    • Korean System Dynamics Review
    • /
    • v.11 no.1
    • /
    • pp.103-131
    • /
    • 2010
  • This paper aims to investigate a dynamic mechanism underlying the process of knowledge creation and growth with a focus on the 'knowledge-friendly culture' conceptually coined by Davenport and Prusak in 2000. To achieve this objective, key attributes of knowledge are first identified by exploring the generic characteristics and information and interpreting the definitions of knowledge, from which four modes of knowledge growth (Socialization, Externalization, Combination, Internalization) are delineated into a dynamic SECI model by identifying cultural attributes underlying each mode and modeling their casual relationships based on the systems thinking. Further, a series of sensitivity analysis through computer simulation were made to find how 'knowledge-friendly' cultural factors affect the knowledge growth. It is found that individual knowledge is most influenced by organization's cohesion whereas organizational knowledge is most affected by the openness of organization.

  • PDF

A Numerical Study of the Effect off Fire Growth Model on Fire Characteristics in a Carriage (화재 성장 모델이 객차내 화재 특성에 미치는 영향에 관한 수치해석적 연구)

  • 김성찬;유홍선;최영기;김동현
    • Journal of the Korean Society for Railway
    • /
    • v.7 no.3
    • /
    • pp.180-185
    • /
    • 2004
  • The present study investigates the effect of fire growth model on fire development characteristics in a carriage. The parallel processing version of FDS code is used to simulate the fire driven flow in a carriage and two types of fire growth model which are flame spread model and t$^2$ model are examined for the same geometrical condition. The heat release rates(HRR) of both model are similar each other until 30 s after ignition, but the flame spread model predicts 5 times higher than those of the t$^2$ fire model during the quasi-steady fire period. Maximum heat release rate in the case of flame spread model reaches about to 12 MW at 100 s after fire ignition. Also, various database of fire properties for combustible materials and more elaborate combustion model considering the flame spreading phenomena are required for better predictions of fire development characteristics using numerical simulation.

Computer Simulation for the Growth of Cr-nitride Formed on Electroplated Cr during ion-Nitriding (이온 질화에 의해 크롬 도금 층 위에 형성된 크롬 질화물의 성장에 관한 전산 모사)

  • 엄지용;이병주;남기석;권식철;권혁상
    • Journal of the Korean institute of surface engineering
    • /
    • v.34 no.3
    • /
    • pp.231-239
    • /
    • 2001
  • The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ionnitriding process was analyzed, and the growth kinetics of the Cr-nitrides was examined as a function of the ion-nitriding temperature and time in order to establish a computer simulation model prediction the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at $550~770^{\circ}C$ were composed of outer CrN and inner $Cr_2$N layers. A nitrogen diffusion model in the multi-layer based on fixed grid FDM (Finite Difference Method) was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of each Cr-nitride layer as a function of the ion-nitriding temperature and time, the activation energy for growth of each Cr-nitride was determined; 82.26 KJ/mol for CrN and 83.36 Kj/mol for $Cr_2$N. Further, the nitrogen diffusion constant was determined in each layer; $9.70$\times$10^{-12}$ /$m^2$/s in CrN and $2.46$\times$10^{-12}$ $m^2$/s in $Cr_2$N. The simulation on the growth kinetics of Cr-nitride layers was in good agreements with the experimental results at 550~72$0^{\circ}C$.

  • PDF

Long-Term Growth Model in Myanmar Based on the Growth Trajectory of Vietnam

  • JEON, Injae;CHO, Yooncheong
    • The Journal of Asian Finance, Economics and Business
    • /
    • v.8 no.2
    • /
    • pp.771-781
    • /
    • 2021
  • The purpose of this study is to identify major drivers of Myanmar's long-term economic growth and draw implications to implement development policies. This study investigated Myanmar, as the country is the most recently opened economy in Southeast Asia. This study conducted simulation analysis based on scenarios by applying World Bank's Long-Term Growth Model, Penn World Table 9.1, and World Development Indicator data. This study makes extensive use of LTGM and the LTGM-TFP extension to improve the validity of models for data calibration. This study confirms the validity of the model with data calibration and specifies scenarios for simulation analyses by setting the growth trajectory of Vietnam due to common geographical, political, and economic conditions. Main findings include that Myanmar's economic growth rate will continue to fall below 3% in 2040 without proper improvement of growth drivers. The results of this study also provide that total factor productivity growth and female labor participation are key factors for Myanmar's long-term economic growth. This study advises policymakers in Myanmar to strengthen human capital, which is crucial for total factor productivity growth in Myanmar's context and directly affects economic growth. Further, labor market policies to promote female labor participation is important to sustain economic growth.

Numerical simulation optimization for solution growth of silicon carbide (SiC 용액 성장을 위한 수치 시뮬레이션의 최적화)

  • Kim, Young-Gon;Choi, Su-Hun;Lee, Chae-Yung;Choi, Jeung-Min;Park, Mi-Seon;Jang, Yeon-Suk;Jeong, Seong-Min;Lee, Myung-Hyun;Kim, Younghee;Seo, Won-Seon;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.27 no.3
    • /
    • pp.130-134
    • /
    • 2017
  • In this study, numerical simulation was performed to focus on optimized process condition for obtaining a long-term growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator ($CGSim^{TM}$, STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.

Fatigue Crack Growth, Coalescence Behavior and its Simulation on Multi-Surface Cracks Under the Elevated Temperature (고온하 복수 표면균열의 성장 합체거동과 시뮬레이션에 관한 연구)

  • 서창민;황남성;윤기봉
    • Journal of Ocean Engineering and Technology
    • /
    • v.9 no.1
    • /
    • pp.142-151
    • /
    • 1995
  • A simulation program concerned with multi-surface fatigue cracks which initiated at the semi-circular surface notches has been developed to predict their growth and coalescence behaviors at the elevated temperature. Three kinds of coalescence models such as SPC(surface point connection), ASME and BSI(British Standards Institution) conditions were applied, and the results of the simulation were compared with those of the experiment. This simulation is able to enhance the reliance and integrity of structures especially under the elevated temperature which have lots of difficulties in experiments and applications. This shows that the simulation result has utility for fatigue life prediction. Even though all the specimens were the same shape, the error rate was increased in accordance with the applied stress to the specimen. Among the material constants C and m in the narrow band, the results applied upper values of the band to the simulation has shown quite small error compared with the experiment results.

  • PDF

Improvement of Vegetation Index Image Simulations by Applying Accumulated Temperature

  • Park, Jin Sue;Park, Wan Yong;Eo, Yang Dam
    • Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
    • /
    • v.38 no.2
    • /
    • pp.97-107
    • /
    • 2020
  • To analyze temporal and spatial changes in vegetation, it is necessary to determine the associated continuous distribution and conduct growth observations using time series data. For this purpose, the normalized difference vegetation index, which is calculated from optical images, is employed. However, acquiring images under cloud cover and rainfall conditions is challenging; therefore, time series data may often be unavailable. To address this issue, La et al. (2015) developed a multilinear simulation method to generate missing images on the target date using the obtained images. This method was applied to a small simulation area, and it employed a simple analysis of variables with lower constraints on the simulation conditions (where the environmental characteristics at the moment of image capture are considered as the variables). In contrast, the present study employs variables that reflect the growth characteristics of vegetation in a greater simulation area, and the results are compared with those of the existing simulation method. By applying the accumulated temperature, the average coefficient of determination (R2) and RMSE (Root Mean-Squared Error) increased and decreased by 0.0850 and 0.0249, respectively. Moreover, when data were unavailable for the same season, R2 and RMSE increased and decreased by 0.2421 and 0.1289, respectively.

Finite element analysis for czochralski growth process of sapphire single crystal (사파이어 단결정의 초크랄스키 성장공정에 대한 유한요소분석)

  • Lim, S.J.;Shin, H.Y.;Kim, J.H.;Im, J.I.
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.21 no.5
    • /
    • pp.193-198
    • /
    • 2011
  • Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

Analysis semiconductor FAB line on computer modeling & simulation (컴퓨터 모델링과 시뮬레이션을 통한 반도체 FAB Line 분석)

  • 채상원;한영신;이칠기
    • Proceedings of the Korea Society for Simulation Conference
    • /
    • 2002.11a
    • /
    • pp.115-121
    • /
    • 2002
  • The growth of semiconductor industry attracted to researchers like design, facility technique and making small size chip areas. But nowadays, cause of technology extension and oversupply and price down, yield improvement is the most important point on growth. This paper describes the computer mode]ing technique as the solutions to analyze the problem, to formalize the semiconductor manufacturing process and to build advanced manufacturing environments. The computer models are built referring an existing 8' wafer production line in Korea.

  • PDF