• ETRI Journal
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• v.43 no.6
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• pp.1024-1037
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• 2021

Mining high utility itemsets (HUIs) from transaction databases considers such factors as the unit profit and quantity of purchased items. Two-phase tree-based algorithms transform a database into compressed tree structures and generate candidate patterns through a recursive pattern-growth procedure. This procedure requires a lot of memory and time to construct conditional pattern trees. To address this issue, this study employs two compressed tree structures, namely, Utility Count Tree and String Utility Tree, to enumerate valid patterns and thus promote fast utility computation. Furthermore, the study presents an algorithm called single-phase utility computation (SPUC) that leverages these two tree structures to mine HUIs in a single phase by incorporating novel pruning strategies. Experiments conducted on both real and synthetic datasets demonstrate the superior performance of SPUC compared with IHUP, UP-Growth, and UP-Growth+algorithms.

• Journal of Microbiology and Biotechnology
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• v.13 no.5
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• pp.687-691
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• 2003

Whole-cell immobilization of the hydrocarbon rich microalgae, Botryococcus braunii and B. protuberans, in alginate beads under air-lift batch cultures resulted in a significant increase in chlorophyll, carotenoid, dry weight, and 1ipid contents at stationary and resting growth phases, as compared to free cells. Photosynthetic activity in both the species, of Botryococcus was enhanced, relative to free cells, at any growth phase of cultures. Immobilization exerted a protective influence on ageing of the cultures as reflected by higher chlorophyll and dry weight contents. Entrapment also stabilized the chlorophyll and carotenoid contents even at stationary and resting phases as compared to free cells in both the species.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.16 no.1
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• pp.15-29
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• 2012

In this paper we introduce 6-fold symmetry crystal growth using new phase-field models based on the modified Allen-Cahn equation. The proposed method is a hybrid method which uses both analytic and numerical solutions. We then show this method can be extended to $k$-fold case. The Wulff construction procedure is provided to understand and predict the shape of crystals. We also present a detailed mathematical proof of the validity of the Wulff construction. For computational results, we verify the accuracy and efficiency of the method for snow crystal growth.

• Journal of Applied Reliability
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• v.5 no.3
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• pp.381-391
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• 2005

The level of reliability attained largely depends upon the investment in reliability growth programs during development phase. In order to find the relationship between reliability growth test time and BRTE(basic reliability tasks effectiveness) in a reliability improvement program that minimizes LCC in which contains the reliability growth cost, repair and replacement costs, and spare parts ordering costs in service with given service rate in management policy, the growth rate has been suggested proper LCC versus growth rate. This model employs the reliability growth projection with delayed fixes in avionic equipment based on AMSAA.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.891-892
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• 2006

To test the correlation between grain shape and growth behavior we prepared WC-TiC-Co samples with rounded (Ti, W)C grains and faceted WC grains. The growth of rounded (Ti, W)C grains was normal. In contrast, the growth of faceted WC grains was abnormal or suppressed depending on the initial size of WC particles. These observations were explained using growth theories of crystals in a liquid and were also confirmed by a simulation using their growth equations. The present results thus demonstrate that the growth behavior of carbide grains in a liquid is governed only by their shape, irrespective of the presence of another phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.632-639
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• 1997

Relative density and microstructure of the pressureless sintered TiC-$TiB_2$ composite has been studied. The maximum sintered density was 95% and the critical amounts of sintering aids were 1 wt% Fe and 3 wt% Ni. It was found that TiC matrix phase inhibited effectively grain growth of the dispersed $TiB_2$ phase. The TEM investigation reveals that the Ni-rich precipitates were solidified from the liquid phase, confirmed by the presence of the waved and/or step phase boundaries. The precipitates also acts as the origin of the dislocation formation in the matrix phases.

• Biotechnology and Bioprocess Engineering:BBE
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• v.3 no.1
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• pp.11-14
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• 1998

A toluene-oxidizing strain of Pseudomanas mendocina KR1 containing toluene-4-mono-oxygenase (TMO) completely degrades TCE with the addition of toluene as a co-substrate in aerobic condition. In order to construct in situ bioremediation system for TCE degradation without any growth-stimulating nutrients or toxic inducer such as toluene, we used the carbon-starvation promoter of Pseudomonas putida MK1 (Kim, Y. et al., J. bacteriol., 1995). Upon entry into the stationary phase due to the deprivation of nutrients, this promoter is strongly induced without further cell growth. The TMO gene cluster (4.5 kb) was spliced downstream of the carbon starvation promoter of Pseudomonas putida MK1, already cloned in pUC19. TMO under the carbon starvation promoter was not expressed in E. coli cells either in stationary phase or exponential phase. For TMO expression in Pseudomonas strains, tmo and carbon starvation promoter region were recloned into a modified broad-host range vector pMMB67HES which was made from pMMB67HE(8.9 kb) by deletion of tac promoter and lacIq (about 1.5 kb). Indigo was produced by TMO under the carbon starvation promoter in a Pseudomonas strain of post-exponential phase on M9 (0.2% glucose and 1mM indole) or LB. 18% of TCE was degraded in 14 hours after entering the stationary phase at the initial concentration of 6.6 ${\mu}$M in liquid phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.127-131
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• 2001

The effect of grain shape on the grain growth behavior of oxide system was investigated as afunction of liquid content during liquid phase sintering. As a model system, the solid grains of $Al_{2}O_{3}$ and MgO were selected during liquid phase sintering, i.e. faceted shape of $Al_{2}O_{3}$ in $CaAl_{2}Si_{2}O_{8}$ liquid phase and spherical shape of MgO in $CaMgSiO_{4}$ liquid phase. The average grain size of MgO with spherical shape was decreased with increasing the liquid phase content, whereas that of $Al_{2}O_{3}$ with faceted shape was independent of liquid phase content. In the case of $Al_{2}O_{3}$ grains with faceted shape, which interfaces are expected to be atomically flat, are likely to grow by the interfacial reaction controled process. Whereas, in the case of MgO grains with spherical shape, which interface are expected to be atomically rough, are likely to grow by the diffusion controlled process.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.207-212
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• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.