• Journal of applied mathematics & informatics
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• v.17 no.1_2_3
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• pp.747-757
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• 2005

A physical variable is customarily thought of as a function. Another way of describing a physical variable is to specify it as a functional, whose special type is called a distribution. It turns out that the distribution concept provide a better mechanism for analyzing certain physical phenomena than does the function concept. By using wavelets with high regularity we give a resolution of functions with slow growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.181-181
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• 2012

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the evidences for two different growth modes of graphene on Cu investigated by varying carbon feedstock (C2H2 and CH4) and working pressure. The number of uniform graphene layer grown by C2H2 increased with increasing its injection time. A combined secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) study revealed a carbon-diffused Cu layer created below surface region of Cu substrate with the expansion of Cu lattice. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Based on various previous results and ours, we have successfully found that there are two selective growth modes for graphene on Cu substrate, and a desired mode can be chosen by tuning working pressure corresponding to the kind of carbon feedstock. We believe that this finding will shed light on high quality graphene growth and its multifaceted applications.

• Journal of Microbiology and Biotechnology
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• v.12 no.2
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• pp.249-257
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• 2002

Pseudomonas fluorescens GL20 is a plant growth-promoting rhizobacterium that produces a large amount of hydroxamate siderophore under iron-limited conditions. The strain GL20 considerably inhibited the spore germination and hyphal growth of a plant pathogenic fungus, Fusarium solani, when iron was limited, significantly suppressed the root-rot disease on beans caused by F. solani, and enhanced the plant growth. The mechanism for the beneficial effect of strain GL20 on the disease suppression was due to the siderophore production, evidenced by mutant strains derived from the strain. Analysis of the outer membrane protein profile revealed that the growth of strain GL20 induced the synthesis of specific iron-regulated outer membrane proteins with molecular masses of 85- and 90 kDa as the high-affinity receptors for the ferric siderophore. In addition, a cross-feeding assay revealed the presence of multiple inducible receptors for heterologous siderophores in the strain. In order to induce increased efficacy and potential in biological control of plant disease, a siderophore-overproducing mutant, GL20-S207, was prepared by NTG mutagenesis. The mutant GL20-S207 produced nearly 2.3 times more siderophore than the parent strain. In pot trials of beans with F. solani, the mutant increased plant growth up to 1.5 times compared with that of the parent strain. These results suggest that the plant growth-promoting P. fluorescens GL20 and the genetically bred P. fluorescens GL20-S207 can play an important role in the biological control of soil-borne plant diseases in the rhizosphere.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.185-190
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• 1997

The 6H-SiC single crystals were grown using a self-designed crystal grower by the sublimation method. The grown crystals were typically 30 mm in diameter and 10 mm in length. Optimum growth conditions were established as follows : the temperature of the raw material was $2150~2250^{\circ}C$, the temperature of the substrate was $1950~2050^{\circ}C$, the temperature difference between the raw material and substrate was about $200^{\circ}C$, growth pressure was 50~200 torr and growth rate was 300~700 $\mu\textrm{m}$/hr. Optical microscopy was used for observing the surface of the 6H-SiC single crystal grown and the phenomenological approach was performed on the formation mechanism of the defects in the 6H-SiC crystal. Especially, the micropipes in the as-grown surface were examined to determine the formation mechanisms of the micropipes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.184-184
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• 2011

Using first-principles density-functional calculations, we investigate the chain reaction mechanism of allyl alcohol (ALA) molecules on the H-terminated Si(001)-2${\times}$1 surface. Recently, it was reported [1] that allyl mercaptan (ALM) molecules show a self-directed line growth across the dimer rows through a chain reaction involving several reaction processes: (i) The created radical at the C atom is transferred to the S atom, (ii) the resulting S-centered radical easily abstracts an H atom from the neighboring dimer row, and (iii) the generated S-H group further reacts with the neighboring dimer row to produce the Si-S bond on the neighboring dimer row, accompanying the associative desorption of H2. This H2-desorption process creates a new DB on the neighboring dimer row, setting off the chain reaction across the dimer rows. In the present study, we find that although the structure of ALA with -OH functional is analogous to that of ALM with -SH functional, ALA and ALM lines show a difference in their growth direction. We predict that ALA undergoes the chain reaction to show a line growth along the dimer row, contrasting with the ALM line growth across the Si dimer rows. Our analysis shows that the different growth direction of ALA is due to the strong instability of oxygen radical intermediate, which prevents from growing across the dimer rows. Thus, we demonstrate that the stability of the radical intermediate plays a crucial role in determining the direction of molecular line growth.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.825-830
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• 2002

The growth rate of solid grains in TiC-XC-2vol% and TiC-XC-30vo1% Ni cermets, where X=Zr, W or Mo, was fitted to an equation of the form $d^3$-$do^3$=Kt. The grain growth behavior during liquid phase sintering at 1673K decreased markedly with addition of $Mo_2$C or WC and increased with addition of ZrC. The contiguity ratio was greater in the alloys with smaller growth rate constant and decreased with increasing Ni content in the $TiC-Mo_2$C-Ni cermet. The grain growth mechanism could be explained by the effect of contiguous grain boundaries in restricting the overall grain growth.

• BMB Reports
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• v.38 no.1
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• pp.1-8
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• 2005

Transforming growth factor-$\beta$ is a pleiotropic growth factor that has enthralled many investigators for approximately two decades. In addition to many reports that have clarified the basic mechanism of transforming growth factor-$\beta$ signal transduction, numerous laboratories have published on the clinical implication/application of transforming growth factor-$\beta$. To name a few, dysregulation of transforming growth factor-$\beta$ signaling plays a role in carcinogenesis, autoimmunity, angiogenesis, and wound healing. In this report, we will review these clinical implications of transforming growth factor-$\beta$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• The Plant Pathology Journal
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• v.25 no.4
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• pp.389-399
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• 2009

A group of beneficial plant bacteria has been shown to increase crop growth referring to as plant growth-promoting rhizobacteria (PGPR). PGPR can decrease plant disease directly, through the production of antagonistic compounds, and indirectly, through the elicitation of a plant defense response termed induced systemic resistance (ISR). While the mechanism of PGPR-elicited ISR has been studied extensively in the model plant Arabidopsis, it is less well characterized in crop plants such as pepper. In an effort to better understand the mechanism of ISR in crop plants, we investigated the induction of ISR by Bacillus cereus strain BS107 against Xanthomonas axonopodis pv. vesicatoria in pepper leaves. We focused on the priming effect of B. cereus strain BS107 on plant defense genes as an ISR mechanism. Of ten known pepper defense genes that were previously reported to be involved in pathogen defense signaling, the expression of Capsicum annum pathogenesis-protein 4 and CaPR1 was systemically primed by the application of strain BS107 onto pepper roots confirming by quantitative-reverse transcriptase PCR. Our results provide novel genetic evidence of the priming effect of a rhizobacterium on the expression of pepper defense genes involved in ISR.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.1-6
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• 2010

Star-like ZnO nanostructures were grown on SI(100) substrates with carbon(C) catalyst by employing vapor-solid(VS) mechanism. The morphologies and structure of ZnO nanostructures were investigated by Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectrum, Photoluminescence spectrum. The results demonstrated that the as-synthesized products consisted of star-like ZnO nanostructure with hexagonal wurtzite phase. Nanostructures grown at 1100 were mainly star-like in structure with diameters of 500 nm. The legs of the star-like nanostructures were preferentially grown up along the [0001] direction. A vapor.solid (VS) growth mechanism was proposed to explain the formation of the star-like structures. Photoluminescence spectrum exhibited a narrow emission band peak around 380 nm and a broad one around 491 nm. Raman spectrum of the ZnO nanostructures showed oxygen defects in ZnO nanostructures due to the existence of Ar gas during the growth process, leading to the dominant green band peak in the PL spectrum.