• Korean Journal of Materials Research
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• v.20 no.1
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• pp.19-24
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• 2010

The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.386-390
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• 2015

Fe-base superalloy powders with $Y_2O_3$ dispersion were prepared by high energy ball milling, followed by spark plasma sintering for consolidation. High-purity elemental powders with different Fe powder sizes of 24 and 50 mm were used for the preparation of $Fe-20Cr-4.5Al-0.5Ti-O.5Y_2O_3$ powder mixtures (wt%). The milling process of the powders was carried out in a horizontal rotary ball mill using a stainless steel vial and balls. The milling times of 1 to 5 h by constant operation (350 rpm, ball-to-powder ratio of 30:1 in weight) or cycle operation (1300 rpm for 4 min and 900 rpm for 1 min, 15:1) were applied. Microstructural observation revealed that the crystalline size of Fe decreased with an increase in milling time by cyclic operation and was about 15 nm after 3 h, forming a FeCr alloy phase. The cyclic operation had an advantage over constant milling in that a smaller-agglomerated structure was obtained. The milled powders were sintered at $1100^{\circ}C$ for 30 min in vacuum. With an increase in milling time, the sintered specimen showed a more homogeneous microstructure. In addition, a homogenous distribution of Y-compound particles in the grain boundary was confirmed by EDX analysis.

• Journal of the Mineralogical Society of Korea
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• v.4 no.2
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• pp.129-140
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• 1991

Two illite polytypes, 2M1 and 1Md, have been identified from the sericite deposits of the Bobae mine, Kimhae, Kyungsangnam-do. Each polytype has characteristic grain size, chemical composition, and occurrence. 2M1 illite occurs predominantly in the sericitic alteration zone, while 1Md illite occurs predominantly in the propylitic alteration zone, implying that the former was formed in the higher temperature than the latter. Illites can be subdivided into two types based on their crystal sizes;(1) the $\mu\textrm{m}$-sized illite which is below 0.01mm(100$\mu\textrm{m}$) in size and consists of 2M1 and 1Md type, (2) the mm-sized illite which is above 0.01mm in size and consists only of 2M1 type. Especially illite below 1$\mu\textrm{m}$ is premominantly of 1Md type. Therefore, it seems likely that illite crystal size is to some extent related to the polytype. XRD data show that there is no interstratified layer in illites regardless of the crystal size and polytype. Activity of muscovite component of the $\mu\textrm{m}$-sized illite is 0.843 while that of the mm-sized illite is 0.790. However, the latter is more similar to muscovite in crystal structure than the former is. The mm-sized illite has less Al and more Kthan the $\mu\textrm{m}$-sized illite. In both illites, Si contents show a positive relation to octahedral Mg. Fluid inclusion study and mineral association show that the formation temperature of illite is $270-330^{\circ}C$. The major chemical processes leading to the formation of sericitic deposit as well as the alteration zones are the leaching of SiO2 from the country rock and the addition of Al2O3 and K2O into the sericitic ores.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.77-85
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• 1991

In this study we have investigated surface morphologies of as-deposited silicon films on the various deposition conditions using LPCVD(Low Pressure Chemical Vapor Deposition) System. The processing conditions such as deposition temperature, pressure and flow rate of $SiH_4$ gas were found to determine the surface morphology. The optimum temperature of maximum effective surface area increased with increasing the deposition pressure and the flow rate of $SiH_4$ gas, These experimental results were also in quite good agreement with the equation derived under the assumption that the maximum effective surface area is obtained on the condition of maximum nucleation rate.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

• Journal of the Korean Geotechnical Society
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• v.28 no.9
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• pp.97-106
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• 2012

In order to investigate mechanics of mixtures composed of sand and non-plastic silt, various specimens, with sand dominating the soil structure, and with varying fines content, fines content varying were produced. Isotropic consolidation tests were performed using high pressure triaxial test apparatus within high pressure levels where sand grain crushing happened. Experimental results showed that compressive curve of sand after yielding contracts to the NCL due to breakage of sand grains. Moreover, with the increase of fines content, coarse grains are surrounded by fines to form cushion effect, which made the breakage of coarse grains become difficult. Therefore, the maximum inclination of compressive curve became flatter and yield stress increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.237-241
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• 1999

The characteristics of copper thin films and via hole filling capability were investigated by pulsed electrodeposition method. Especially, the effects of additives on the properties of copper thin films were studied. Copper films, which were deposited by pulsed electrodeposition using commercial additives, had low tensile stress value under 83.4 MPa and high preferred Cu (111) texture. Via holes with $0.25{\mu}m$ in diameter and 6 : 1 aspect ratio were successfully filled without any defects by superfilling. It was observed that copper microstructure deformed by twining. After heat treatment at $500^{\circ}C$ for 1 k in vacuum furnace, grain size was 1 or 2 times as large as film thickness and the bamboo structure was formed. Heat treated copper films showed good resistivities of $1.8\~2.0{\mu}{\Omega}{\cdot}cm$.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.