• 제목/요약/키워드: Grain boundary structure

Search Result 181, Processing Time 0.026 seconds

Analysis of the effect on the whisker growth as grain size of plating and base metal (Plating 및 Base metal의 Grain size에 따른 Whisker 성장 영향 분석)

  • Kim, Su-Jin;Chang, Mi-Soon;Kwack, Kae-Dal
    • Proceedings of the KSME Conference
    • /
    • 2008.11a
    • /
    • pp.1337-1342
    • /
    • 2008
  • The whisker grows at the plating of a lead frame so that it causes the serious problem like the short. To prove this case, many people have studied the cause and influence of the tin whisker growth. This study explains the grain size affects the growth of the whisker in the lead frame. By these studies about the whisker, the whisker growth is discovered by stresses generated by the intermetallic compound and CTE mismatch in both plating and base metal. The stresses or lattice defect generated in the plating process changes grain structure of plating. Consequently, these various stresses are stabilized by forming unspecified whiskers through lots of grain boundaries. Because the grain boundary is the path of the whisker growth, the smaller grain size exists, the more whiskers grow.

  • PDF

Radiation induced grain boundary segregation in ferritic/martensitic steels

  • Xia, L.D.;Ji, Y.Z.;Liu, W.B.;Chen, H.;Yang, Z.G.;Zhang, C.;Chen, L.Q.
    • Nuclear Engineering and Technology
    • /
    • v.52 no.1
    • /
    • pp.148-154
    • /
    • 2020
  • The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.

Formation Process and Structure of Lamellar Grain Boundaries in Titanium Rich TiAl Intermetallics

  • Han, Chang-Suk;Lim, Sang-Yeon
    • Korean Journal of Materials Research
    • /
    • v.26 no.1
    • /
    • pp.13-16
    • /
    • 2016
  • Morphology and formation processes of lamellar grain boundaries in titanium rich binary TiAl intermetallics were studied. TiAl alloys containing aluminum content of 44 to 48 at.% were induction-heated to 1723 K followed by helium-gas-quenching at various temperatures. For the Ti-44%Al, few lamellae were observed in samples quenched from higher than 1473 K. Although small peaks of beta phase were detected using X-ray diffraction, only the ordered hexagonal phase (${\alpha}_2$) with clear APB contrast was observed in TEM observation. For the Ti-48 at.%Al alloy, almost no lamellar structure, and straight grain boundaries were observed in samples quenched from higher than 1623 K. The formation of lamellae along grain boundaries was observed in the sample quenched from 1573 K. The fully lamellar microstructures with serrated boundaries were observed in samples quenched from lower than 1473 K. It was found that the formation of ${\gamma}$ platelets took place at higher temperatures in Ti-48 at.%Al than in Ti-44 at.%Al. Although the size of the serration is different, serrated lamellar grain boundaries could be obtained for all alloy compositions employed. The serration appeared to be due to the grain boundary migration induced by precipitation and growth of ${\gamma}$. Differences in transformation characteristics with aluminum content are discussed.

Dislocation Density Propagation adjacent to the Low Angle Grain Boundaries of Polycrystalline Materials (다결정 미세입자 소각입계면에서의 전위밀도 확산)

  • Ma, Jeong-Beom
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.20 no.5
    • /
    • pp.618-622
    • /
    • 2011
  • Specialized large-scale computational finite-element and molecular dynamic models have been used in order to understand and predict how dislocation density emission and contact stress field due to nanoindentation affect inelastic deformation evolution scales that span the molecular to the continuum level in ductile crystalline systems. Dislocation density distributions and local stress fields have been obtained for different crystalline slip-system and grain-boundary orientations. The interrelated effects of grain-boundary interfaces and orientations, dislocation density evolution and crystalline structure on indentation inelastic regions have been investigated.

Bond Strength of Steel honeycomb Structure (철강 하니콤구조의 접합강도)

  • Song, Keun;Hong, Young Hwan
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.16 no.4
    • /
    • pp.197-204
    • /
    • 2003
  • Honeycomb structure has been fabricated by brazing method using 0.1 wt%C and 1.0wt%C carbon steel core and STS304 stainless steel face sheet. Core shear strength ratio in W and L directions was 1:1.03 in 7 mm cell size, whereas 1:1.45 in 4 mm cell size. Flexural strength on face sheet was 166.4 MPa (0.1 wt%C, W direction), 171.1 MPa (0.1 wt%C, L direction), and 120.2 MPa (1.0 wt%C, W direction) in 7 mm cell size. And in 4mm cell size specimen, it was 169.2 MPa (0.1 wt%C, W direction), 224.2 MPa (0.1 wt%C, L direction). This means that flexural strength of 0.1 wt%C core material was higher than that of 1.0wt%C core material, which was contrary to expectation. SEM and EDS analysis represented that grain boundary diffusion had occurred in0.1 wt%C core, but no grain boundary diffusion in 1.0 wt%C core. And corrugated surface of 0.1 wt%C core was flat, whereas that of 1.0 wt%C core was not flat. As a result, contact area between two 1.0 wt%C cores was much less than that of 0.1 wt% cores, It is thought to be main reason for lower flexural strength of 1.0 wt%C core.

SiAlON Bulk Glasses and Their Role in Silicon Nitride Grain Boundaries: Composition-Structure-Property Relationships

  • Hampshire, Stuart;Pomeroy, Michael J.
    • Journal of the Korean Ceramic Society
    • /
    • v.49 no.4
    • /
    • pp.301-307
    • /
    • 2012
  • SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

Dislocation structure in hot-pressed polycrystalline $TiB_{2}$ (고온가압성형된 다결정 $TiB_{2}$내에서 전위구조)

  • Kwang Bo Shim;Brian Ralph;Keun Ho Auh
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.6 no.2
    • /
    • pp.194-202
    • /
    • 1996
  • Transmission electron microscopy has been used to characterize the dislocation structure in hot-pressed titanium diboride. The thin foil samples were prepared by the conventional ion beam thinning technique and reveal the main features associated with the dislocations ; low-angle grain boundaries with dislocation arrays, high-angle grain boundaries with ledges/steps on the boundary planes. The ledges/steps on the grain boundaries were characterized as the origin of defect structures such as dislocation formation or crack propagation near grain boundaries. A fraction of the high angle grain boundaries contained periodic arrays of grain boundary dislocations. The Burger's vectors of the dislocations in the $TiB_{2}$specimens were determined.

  • PDF

Dielectric Properties of Orthorhombic Dysprosium Manganites

  • Wang, Wei Tian
    • Korean Journal of Materials Research
    • /
    • v.29 no.12
    • /
    • pp.753-756
    • /
    • 2019
  • Orthorhombic dysprosium manganite DyMnO3 with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO3 ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO3 ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

Transmission Electron Microscopy of GaAs Planar Defects (투과전자현미경을 이용한 GaAs의 면결함 구조 연구)

  • Cho, N.H.;Hong, Kug Sun;Cater, C.B.
    • Analytical Science and Technology
    • /
    • v.5 no.1
    • /
    • pp.121-126
    • /
    • 1992
  • Transmission electron microscopy was used to investigate the structure of GaAs ${\Sigma}=19$, [110] tilt grain boundaries. Relative positions of Ga and As atoms in each grain on either side of the boundaries were determined by examining the dynamical coupling between HOLZ reflections and(200) beams. No inversion symmetry was present across the boundaries. These boundaries were observed to have a strong tendency to lie parallel to {331} planes. The atomic structure and lattice translation at these boundaries was studied in detail by high-resolution transmission electron microscopy(HRTEM). The boundary consists of units of 5-, 7-, and two 6-member rings.

  • PDF

Microstructural Features of Multicomponent FeCoCrNiSix Alloys

  • Kong, Kyeong Ho;Kim, Kang Cheol;Kim, Won Tae;Kim, Do Hyang
    • Applied Microscopy
    • /
    • v.45 no.1
    • /
    • pp.32-36
    • /
    • 2015
  • The microstructural features of FeCoCrNi, FeCoCrNiAl and FeCoCrNiSix (x=0, 5, 10, 15, 20) alloys have been investigated in the present study. The microstructure of FeCoCrNi alloy changes dramatically with equiatomic addition of Al. The fcc irregular shaped grain structure in the as-cast FeCoCrNi alloy changes into the bcc interconnected structure with phase separation of Al-Ni rich and Cr-Fe rich phases in the as-cast FeCoCrNiAl alloy. The microstructure of FeCoCrNi alloy changes with the addition of Si. With increasing the amount of Si, the fcc structure of the grains is maintained, but new phase containing higher amount of Si forms at the grain boundary. As the amount of Si increases, the fraction the Si-rich grain boundary phase increases.