Analytical Science and Technology (분석과학)

The Korean Society of Analytical Sciences (한국분석과학회)
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Transmission Electron Microscopy of GaAs Planar Defects

투과전자현미경을 이용한 GaAs의 면결함 구조 연구

  • Cho, N.H. (Materials Research Division Korea Institute of Science and Technology) ;
  • Hong, Kug Sun (Materials Research Division Korea Institute of Science and Technology) ;
  • Cater, C.B. (Dept. of Materials Science and Engineering, Cornell University)
  • 조남희 (한국과학기술연구원 재료연구단) ;
  • 홍국선 (한국과학기술연구원 재료연구단) ;
  • Received : 1992.03.15
  • Published : 1992.03.25
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Abstract

Transmission electron microscopy was used to investigate the structure of GaAs ${\Sigma}=19$, [110] tilt grain boundaries. Relative positions of Ga and As atoms in each grain on either side of the boundaries were determined by examining the dynamical coupling between HOLZ reflections and(200) beams. No inversion symmetry was present across the boundaries. These boundaries were observed to have a strong tendency to lie parallel to {331} planes. The atomic structure and lattice translation at these boundaries was studied in detail by high-resolution transmission electron microscopy(HRTEM). The boundary consists of units of 5-, 7-, and two 6-member rings.

GaAs ${\Sigma}=19$, [110] tilt grain boundary의 구조를 투과전자현미경을 이용하여 연구하였다. Higher-Order Laue-Zone(HOLZ) 빔들과 {200} 빔과의 dynamical coupling 결과를 검토하여 입계 양쪽 각각의 입자(grain) 내 Ga-As의 상대적 위치(방향성)를 결정하였으며, 두 입자 사이에는 inversion symmetry가 결합되지 않은 ${\Sigma}=19$ coincidence에 해당하는 교차각이 있었다. 계면은 $\{331\}_A/\{331\}_B$, [110] 결정면을 따라서 발생하는 경향이 강함을 관측했다. 이 facet에서의 원자구조 및 격자이동 등을 고분해 투과전자현미경을 이용하여 밝혔다. 5-, 7-, 그리고 6-member ring의 조합으로 되어 있는 단위를 계면원자구조 model로 제시했다.

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