• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1361-1363
• /
• 1998

Poly-Si grain boundaries act as potential barriers as well as recombination centers for the photo-generated carriers in solar cells. Thereby, grain boundaries of poly-Si are considered as a major source of the poly-Si cell efficiency was reduced This paper investigated grain boundary effect of poly-Si wafer prior to the solar cell fabrication. By comparing I-V characteristics inner grain, on and across the grain boundary, we were able to detect grain potentials. To reduce grain boundary effect we carried out pretreatment, $POCl_3$ gettering, and examined carrier lifetime. This paper focuses on resistivity variation effect due to grain boundary of poly-Si. The resistivity of the inner grain was $2.2{\Omega}-cm$, on the grain boundary$2.3{\Omega}-cm$, across the grain boundary $2.6{\Omega}-cm$. A measured resistivity varied depending on how many grains were included inside the four point probes. The resistivity increased as the number of grain boundaries increased. Our result can contribute to achieve high conversion efficiency of poly-Si solar cell by overcoming the grain boundary influence.

• The Korean Journal of Ceramics
• /
• 제4권2호
• /
• pp.122-127
• /
• 1998

Conductivities of polycrystalline ceria doped with several rare earth oxides were measured by AC admittance and DC four probe method. The conductions were separated into grain and grain boundary contributions using the complex admittance technique as well as grain size dependence of conductivity. The grain size dependence of polycrystalline conductivity, which can be adequately described by the so-called brick layer model, appears to give a more reliable measure of the grain conductivity compared to the complex admittance method. Polycrystalline resistivity(1/conductivity) increases linearly with the reciprocal of grain size. The intercept of resistivity vs. inverse grain size plot gives a measure of the grain resistivity and the slope gives a measure of the grain boundary resistivity. It was also noted that errors involved in the analysis of experimental data may be different between the complex admittance method and the impedance method. A greater resolution of the spectra was found in the complex admittance method, insofar as the present work is concerned, suggesting that the commonly used equivalent circuit may require re-evaluation.

• 한국세라믹학회지
• /
• 제45권1호
• /
• pp.69-74
• /
• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

• 한국세라믹학회지
• /
• 제39권9호
• /
• pp.818-821
• /
• 2002

The grain boundary resistivity of a 1-mol%-$Al_2O_3$-dopedd CaO-Stabilized Zirconia(CSZ) specimen was determined by impedance spectroscopy using sub-millimeter-scale electrodes. At the initial stage of sintering, the grain-boundary resistivity of the specimen interior was observed to be higher than that of the surface. However, upon further sintering the boundary resistivity of the specimen interior became lower than that of the surface. The results were explained in terms of a redistribution of the intergranular liquid phase. The liquid phase was predicted to initially coagulate at the interior of the specimen then spread outward during sintering.

• 한국세라믹학회지
• /
• 제33권1호
• /
• pp.35-40
• /
• 1996

The influence of grain boundary on the electrical properties of WO3-doped SrTiO3 ceramics has been investi-gated. From the result resistivity and capacitance of grains and boundaries were obtained by employing impedance spectrocopy. And the temperature dependance of capacitance of WO3-doped SrTiO3. was influenced directly by the variation of grain boundary capacitance. It was also found by impedance spectroscopy that the dispersion frequency characteristics showed discernibly that the resistivity of the specimen varied with WO3 content.

• 한국재료학회지
• /
• 제3권5호
• /
• pp.553-561
• /
• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_2O_3$를 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 $BaTiO_3$PTCR 재료에 $Bi_2O_3$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_2O_3$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 $Y-BaTiO_3$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다. $Bi_2O_3$의 첨가량에 따라 계내에 존재하는 각 이온의 반경, 결함 반응식 및 격자 탄성 변형 에너지 등을 고려하면 $Y-BaTiO_3$결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 $BaTiO_3$에 고용이 되지 않는 것으로 밝혀졌으며 $B_2O_3$를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로써 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.597-600
• /
• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.243.2-243.2
• /
• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• 센서학회지
• /
• 제1권1호
• /
• pp.67-75
• /
• 1992

$BaTiO_{3}$ PTC 서미스터를 제조하여 그 전기적 특성을 조사하였다. PTC 서미스터의 저항률은 $20^{\circ}C$에서 $200^{\circ}C$까지 $20^{\circ}C$ 간격으로 측정되었다. 이 시편의 ac 복소 임피던스 분석을 통하여 PTC 서미스터의 입계저항, 입계정전용량, bulk 저항 등을 조사하였다. 전자현미경을 사용하여 grain을 확인하고 평균 입경을 구하였으며 측정된 평균 입경은 $3.8{\mu}m$에서 $8.8{\mu}m$까지 되었다. 평균 입경은 소결온도가 높을수록 커지는 경향을 보였으며 최대저항률 증가비는 $4{\times}10^{5}$ 정도였다. Bulk 저항률은 소결온도가 $1340^{\circ}C$ 이상일 경우는 측정온도가 증가함에 따라 감소하였다. 측정온도가 증가할수록 입계저항은 n의 지수함수적으로 증가하였으며, 입계정전용량은 감소하고, 입계의 전위 장벽은 증가하였다. 입계전하밀도는 측정온도가 올라갈수록 증가하였으나, 측정온도가 약 $110^{\circ}C$ 이상일 경우 더 이상 증가하지 않았다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1738-1740
• /
• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.