• 제목/요약/키워드: Grain Structure

검색결과 1,248건 처리시간 0.027초

12Ce-TZP 세라믹스의 소결에서의 CaO의 역할 (Role of CaO in the Sintering of 12Ce-TZP Ceramics)

  • 박정현;문성환;박한수
    • 한국세라믹학회지
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    • 제29권4호
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    • pp.265-272
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    • 1992
  • Role of CaO in the sintering of 12Ce-TZP ceramics was studied. The addition of small amounts of CaO increase the densification rate of 12Ce-TZP by altering lattice defect structure and the diffusion coefficient of the rate controlling species, namely cerium and zirconium cations. CaO also inhibits grain growth during sintering and allows the sintering process to proceed to theoretical density by maintaining a high diffusion flux of vacancies from the pores to the grain boundaries. The inhibition of grain growth is accomplished by the segregation of solute at the grain boundaries, causing a decrease in the grain boundary mobility. The segregation of calcium was revealed by AES study.

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Mg-Sn-Al-Zn 마그네슘 합금 간접압출재의 미세조직 및 소성이방성 (Microstructure and Yield Asymmetry Behavior of Indirect-extruded Mg-Sn-Al-Zn Alloys)

  • 박성혁;김영민;김하식;임창동;유봉선
    • 소성∙가공
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    • 제21권5호
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    • pp.324-329
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    • 2012
  • Mg-(9-x)Sn-xAl-1Zn (x=1, 2, 3 and 4 wt.%) alloys were subjected to indirect extrusion, and the microstructure and mechanical properties of the as-extruded Mg-Sn-Al-Zn (TAZ) alloys were investigated. The TAZ 811 alloy exhibited a finer grain structure than the TAZ 541 alloy due to a larger number of Mg2Sn particles, which pinned the grain boundaries and prevented growth of recrystallized grains. The TAZ alloys showed an unusual yield asymmetry behavior. The tension-compression yield asymmetry increased with decreasing average grain size. The TAZ 811 alloy with a small grain size exhibited a larger yield asymmetry than that of the TAZ 541 alloy having a relatively large grain size, which is mainly attributed to the low Al content and large number of second phase particles in the TAZ 811 alloy.

Absence of Distinctively High Grain-Boundary Impedance in Polycrystalline Cubic Bismuth Oxide

  • Jung, Hyun Joon;Chung, Sung-Yoon
    • 한국세라믹학회지
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    • 제54권5호
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    • pp.413-421
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    • 2017
  • In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

Effect of grain refinement on the performance of AZ80 Mg alloys during wear and corrosion

  • Naik, Gajanan M;Gote, Gopal D.;Narendranath, S;Kumar, S.S. Satheesh
    • Advances in materials Research
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    • 제7권2호
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    • pp.105-118
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    • 2018
  • Magnesium and its alloys are attracted towards all engineering applications like automotive, marine, aerospace etc. due to its inherent high strength to weight ratio. But, extensive use of Mg alloys is limited to the current scenario because of low wear and corrosion resistance behavior. However, equal channel angular press is one of the severe plastic deformation technique which has been effective method to improve the wear and corrosion resistance by achieving fine grain structure. In this study, the effect of grain refinement on wear and corrosion resistance of AZ80 Mg alloys were investigated. The wear behavior of the coarse and fine-grained Mg alloys was examined through $L_9$ orthogonal array experiments in order to comprehend the wear behavior under varies control parameters. It was shown that ECAPed alloy increased the wear and corrosion resistance of the Mg alloy through the formation of fine grain and uniform distribution of secondary ${\beta}-phase$. Also, the performance of AZ80 Mg alloy for these changeswas discussed through SEM morphology.

Control of Thin Film Media Microstructure by Using Very Thin Seedlayer Material with Different Affinity for Oxygen

  • Djayaprawira, D.D.;Yoshimura, Satoru;Takahashi, Migaku
    • Journal of Magnetics
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    • 제7권3호
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    • pp.106-114
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    • 2002
  • To reduce the grain size and the media noise in a typical CrMo/CoCrPtB longitudinal media, a sputtering process which includes the exposure of oxygen onto the surface of CrW$_x$ (x=0, 25, 50, 75, 100 at.%) and CrTi$_{15}$ seedlayers with the thickness of 0.5 nm have been utilized. The main results are: (1) the media grain size and the media noise are reduced when using CrW$_x$ (x=0, 25, 50 at.%) seedlayers, and not reduced when using CrTils or CrW$_x$ (x=75, 100 at.%) seedlayers, (2) AES and RHEED results suggest that W seedlayer, which has the highest melting point, forms layer-like film with very small and dense island grain, due to its high free surface energy and low mobility. On the other hand, CrW$_{50}$ and Cr seedlayers, which have lower melting point than W seedlayer, form island film, (3) to effectively reduce the media grain size and improve the media signal to noise ratio, it is essential to utilize a very thin Cr-based seedlayer with high affinity for oxygen and which forms island-like structure, such as CrW$_{50}$ seedlayer.

Ni-P 합금의 전기전도도와 경도에 대한 도금 조건의 영향 (Effect of Electroplating Parameters on Conductivity and Hardness of Ni-P Alloy)

  • 김남길;선용빈
    • 마이크로전자및패키징학회지
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    • 제24권3호
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    • pp.77-81
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    • 2017
  • Pulse electroplating of Ni-P alloy was studied to fulfill the material requirement to the advanced vertical probe tip in wafer probe card. The major concerns are for the electrical conductivity and yield strength. Plating parameters such as current density, duty cycle and solution components were examined to obtain the nanocrystal structure and proper percentage of phosphorus, leading to how to control the nanocrystal grain growth and precipitation of $Ni_3P$ after heat treatment. Among the parameters, the amount of phosphorus acid was the main factor affecting on the grain size and sheet resistance, and the amount of 0.1 gram was appropriate. Since hardness in Ni-P alloy is increased by as-plated nanocrystal structure plus precipitation of $Ni_3P$, the concentration of P less than 15 at% was better choice for the grain coarsening without minus in hardness value. The following heat treatment made grain growth and dispersion of precipitates adjustable to meet the target limit of resistance of $100m{\Omega}$ and hardness number of over 1000Hv. The Ni-P alloy will be a candidate for the substitute of the conventional probe tip material.

합성 $Hard-{\alpha}$ Inclusion의 다단계 적응형 노이즈 제거기법 연구 (Multi-Stage Adaptive Noise Cancellation Technique for Synthetic $Hard-{\alpha}$ Inclusion)

  • 김재준
    • 비파괴검사학회지
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    • 제23권5호
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    • pp.455-463
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    • 2003
  • 초음파 비파괴 평가에서 적응 노이즈 제거 기법은 시험 재료의 결정립 구조(grain structure)로 인해 공간적으로 변화하는 노이즈를 감소시키는데 적합하다. 일반적으로 결정립 노이즈는 비상관 관계성을 가지고 있는 반면에 결점(flaw) 신호는 상관 관계성을 띄고 있기 때문에 적응 필터링 알고리즘으로 출력 신호의 신호 대 잡음비를 향상시키기 위해 신호의 상관관계 특징을 이용한다. 본 논문에서는 초음파 탐상의 결함 검출 능력 향상을 위해 적응 LMSE(least mean square error) 필터를 이용한 다단계 적응 노이즈 제거기법(multi-stage adaptive noise cancellation)을 제시한다.

Varietal Variations in Physicochemical Characteristics and Amylopectin Structure of Grain in Glutinous Rice

  • Choi, Hae-Chune;Hong, Ha-Cheol;Kim, Yeon-Gyu;Nahm, Baek-Hie
    • 한국작물학회지
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    • 제44권3호
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    • pp.207-213
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    • 1999
  • Thirty-eight glutinous rice varieties were classified into nine groups on the scatter diagram by the upper two principal components (56% contribution to the total information) based on eleven physicochemical characteristics including the viscograms and physical properties of cooked rice. The first principal component was the factor mainly associated with the viscogram characteristics of rice flour emulsion and the second was the factor chiefly related to the physical properties of cooked rice and water absorbability of rice grain. Indica glutinous rices were clearly distinguished from japonica ones by the first principal component score. Javanica glutinous rices were widely distributed on the intermediate zone between indica and japonica or on several japonica rice groups. Significant positive or negative correlations were found among water absorption rates of rice grain, physical properties of cooked rice, and viscogram characteristics of rice flour. Especially in japonica glutinous rices, the breakdown and setback viscosities of rice flour were closely associated with the alkali digestion value of milled rice and the stickiness of cooked rice. The frequency ratio of short glucose chains (A-chain) to intermediate glucose chains (B-chain), the ratio of B- chains to long glucose chains (C-chain) and the relative frequency of A- or B-chain fractions representing the amylopection structure of rice starch was closely associated with the breakdown and setback viscosities of rice flour.

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투과전자현미경을 이용한 GaAs의 면결함 구조 연구 (Transmission Electron Microscopy of GaAs Planar Defects)

  • 조남희;홍국선
    • 분석과학
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    • 제5권1호
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    • pp.121-126
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    • 1992
  • GaAs ${\Sigma}=19$, [110] tilt grain boundary의 구조를 투과전자현미경을 이용하여 연구하였다. Higher-Order Laue-Zone(HOLZ) 빔들과 {200} 빔과의 dynamical coupling 결과를 검토하여 입계 양쪽 각각의 입자(grain) 내 Ga-As의 상대적 위치(방향성)를 결정하였으며, 두 입자 사이에는 inversion symmetry가 결합되지 않은 ${\Sigma}=19$ coincidence에 해당하는 교차각이 있었다. 계면은 $\{331\}_A/\{331\}_B$, [110] 결정면을 따라서 발생하는 경향이 강함을 관측했다. 이 facet에서의 원자구조 및 격자이동 등을 고분해 투과전자현미경을 이용하여 밝혔다. 5-, 7-, 그리고 6-member ring의 조합으로 되어 있는 단위를 계면원자구조 model로 제시했다.

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Hemispherical Grain Silicon에 의한 정전용량 확보 및 공정조건 특성에 관한 연구 (A Study on Capacitance Enhancement by Hemispherical Grain Silicon and Process Condition Properties)

  • 정양희;정재영;이승희;강성준;이보희;유일현;최남섭
    • 한국정보통신학회논문지
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    • 제4권4호
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    • pp.809-815
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    • 2000
  • The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.

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