• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.6
• /
• pp.467-473
• /
• 2012

A functionally graded material (FGM) spacer, which the distribution of dielectric permittivity inside an insulator changes spatially, can considerably reduce the electric field concentration around a high-voltage electrode and along the gas-insulator interface when compared to a conventional spacer with a uniform permittivity distribution. In this research, we propose the FGM spacer with an elliptical permittivity distribution instead of that with a distribution of dielectric permittivity varying along a radial direction only in order to improve efficiently the insulation capability. The optimal design of the elliptical FGM spacer configuration is performed by using the response surface methodology (RSM) combined with the steepest descent method (SDM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.225-230
• /
• 2020

Recently, with the miniaturization of GIS, there is a need for the miniaturization of spacers as accessories. Miniaturized spacers make it difficult to secure adequate insulation distances, resulting in a more concentrated electric field at the triple junction of high-voltage (HV) conductor-insulator (spacer)-insulation gas (SF₆), which is a weakness in GIS. Therefore, by introducing a new concept design technology, functionally graded material (FGM), which is recently applied to various materials and parts industries, three-dimensional control of the dielectric constant distribution in a spacer can be expected to alleviate triple-junction electric field occupancy and improve insulation performance. In this study, we propose an optimized model using NSGA-II to optimize the permittivity distribution of FGM applied spacer.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1358_1359
• /
• 2009

가스 절연 개폐장치(Gas Insulated Switchgear : GIS)의 고체 스페이서에 경사기능성 재료(Functionally Graded Material : FGM)를 적용할 때, 전계의 완화를 예상할 수 있다. 특히, 균일 유전율 분포를 가지는 스페이서에서 양극 근처에 집중된 높은 전계가 FGM 스페이서를 사용할 때, 스페이서와 $SF_6$ 가스의 접촉부로 옮겨지며, 그 크기가 완화됨을 확인할 수 있었다[1]. 본 연구에서는 상용 고체 스페이서의 양극 부근에서의 전계 집중을 감소시키기 위해 전극 형상의 최적화를 수행하였다. 최적화 기법으로는 완전계승계획법(Full Factorial Design : FFD)과 결합된 반응표면법(Response Surface Method : RSM)을 이용하였으며, 균일 유전율 스페이서에서 양극 형상을 최적화하였다. 또한 타원형 유전율 분포를 가지는 FGM 스페이서를 이용함으로써, 상용 GIS 모델에 비해 최대 전계가 크게 완화될 수 있음을 확인하였으며, 상용 GIS의 외함부의 크기를 줄여 실제 소형화 가능 여부를 확인하였다.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1364-1365
• /
• 2008

가스 절연 개폐장치(Gas Insulated Switchgear)의 고체 스페이서에 다양한 유전율 분포를 가진 경사기능성 재료(Functionally Graded Material)를 적용할 때, 전계의 완화를 예상할 수 있다. FGM 스페이서는 전계의 집중을 완화시킬 수 있고, 내부의 전계를 더 균일하게 분포시킬 수 있다. 본 연구에서는 유한요소법을 이용하여 상용 GIS의 FGM 스페이서에서 전계의 세기를 계산하였다. 계산 결과를 통해 스페이서의 유전율이 빠르게 변화하는 경우, 더 효율적으로 최대전계를 감소시켰고, 스페이서 내부의 전계를 균일하게 하였다. 결과적으로 FGM 스페이서는 단일 유전율을 가진 스페이서에 비해 절연 성능을 향상시킬 수 있다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.9
• /
• pp.1615-1622
• /
• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Journal of Korean Foot and Ankle Society
• /
• v.23 no.2
• /
• pp.58-66
• /
• 2019

Purpose: To evaluate the efficacy of antibiotic-loaded cement spacers (ALCSs) for the treatment of diabetic foot infections with osteomyelitis as a salvage procedure and to analyze the risk factors of treatment failure. Materials and Methods: This study reviewed retrospectively 39 cases of diabetic foot infections with osteomyelitis who underwent surgical treatment from 2009 to 2017. The mean age and follow-up period were $62{\pm}13years$ and $19.2{\pm}23.3months$, respectively. Wounds were graded using the Wagner and Strauss classification. X-ray, magnetic resonance imaging (or bone scan) and deep tissue cultures were taken preoperatively to diagnose osteomyelitis. The ankle-brachial index, toe-brachial index (TBI), and current perception threshold were checked. Lower extremity angiography was performed and if necessary, percutaneous transluminal angioplasty was conducted preoperatively. As a surgical treatment, meticulous debridement, bone curettage, and ALCS placement were employed in all cases. Between six and eight weeks after surgery, ALCS removal and autogenous iliac bone graft were performed. The treatment was considered successful if the wounds had healed completely within three months without signs of infection and no additional amputation within six months. Results: The treatment success rate was 82.1% (n=32); 12.8% (n=5) required additional amputation and 5.1% (n=2) showed delayed wound healing. Bacterial growth was confirmed in 82.1% (n=32) with methicillin-resistant Staphylococcus aureus being the most commonly identified strain (23.1%, n=9). The lesions were divided anatomically into four groups; the largest number was the toes: (1) toes (41.0%, n=16), (2) metatarsals (35.9%, n=14), (3) midfoot (5.1%, n=2), and (4) hindfoot (17.9%, n=7). A significant difference in the Strauss wound score and TBI was observed between the treatment success group and failure group. Conclusion: The insertion of ALCSs can be a useful treatment option in diabetic foot infections with osteomyelitis. Low scores in the Strauss classification and low TBI are risk factors of treatment failure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.05a
• /
• pp.105-110
• /
• 2008

We have proposed a new structure of poly-silicon thin film transistor(TFT) which was fabricated the LDD region using doping oxide with graded spacer by etching shape retio. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $HT_2$/plasma processes are fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring /analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si Brain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplity of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.