• 제목/요약/키워드: Gold-wire

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반도체 패키징용 Gold Bonding Wire의 변형특성 및 해석 (Deformation Properties of Gold Bonding Wire for VLSI Packaging Applications)

  • 김경섭;홍순형
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 춘계학술대회 논문집
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    • pp.250-253
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    • 2001
  • Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

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서봉총 금제 과대 및 요패의 성분 분석 (A Scientific Analysis of the Gold Belt with Dangling Ornaments from Seobongchong Tomb)

  • 윤은영
    • 박물관보존과학
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    • 제17권
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    • pp.17-42
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    • 2016
  • 신라시대 대형 고분인 서봉총에서 출토된 과대 1점과 요패 8점을 성분 분석하였다. 구성품을 크게 금판, 못, 영락, 금사 등으로 구분하여 성분비를 검토한 결과 모두 서로 다른 순도를 지닌 금제로 제작되었다. 과대에 사용된 금판은 순도 17~18K, 19~20K 두 가지로 구분되며, 못은 약 20K, 영락과 금사는 대부분 18K의 금으로 제작되었다. 요패에 사용된 금판 역시 대부분 17K~19K이며, 연결고리는 17~19K, 못은 17~20K, 영락과 금사는 약 19K의 금제로 확인되었다.

레이저를 이용한 골드 와이어-박막 용접에 관한 연구 (A study on gold wire-thin film welding using laser)

  • 박관우;나석주
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2006년도 춘계학술발표대회 논문집
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    • pp.108-111
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    • 2006
  • Recently, mobile information devices, such as cellular phone, PDA(Personal Digital Assistant, PDA) are getting smaller and thinner. Accordingly, ultra precision welding technology is required to manufacture the high performance system for use in the telecommunication industry. In this study, we propose the laser micro welding process. Using ytterbium fiber laser, a wide range of experiments have been carried out for the gold wire-to-gold thin film welding.

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A Study on the Electrical Characteristics of Different Wire Materials

  • Jeong, Chi-Hyeon;Ahn, Billy;Ray, Coronado;Kai, Liu;Hlaing, Ma Phoo Pwint;Park, Susan;Kim, Gwang
    • 마이크로전자및패키징학회지
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    • 제20권4호
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    • pp.47-52
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    • 2013
  • Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.

1-10 ㎓ 초고주파 패키지용 bonding wire 인덕턴스 특성 측정 (Inductance Characterization of Bonding Wires for 1-10㎓ Radio Frequency Packages)

  • 정태호;지용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.221-224
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    • 2001
  • In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

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Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

  • Choi, Sung-Min;Lee, Gae-Ho;Han, Jae-Kil
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.393-397
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    • 2008
  • Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L-1 at 265.118 nm for Ge and 0.009 mg L-1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW+HBr+HNO3, the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW+HCl+HNO3, due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg-1 and 9.24 mg kg-1, respectively, and the P contents, using the same methods, were 22.49 mg kg-1 and 23.09 mg kg-1, respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

미소 직경 골드 와이어와 니켈 박막의 레이저 마이크로 접합에 관한 연구 (A Study on Laser Micro Joining of Small Diameter Gold Wires to Nickel Thin Films)

  • 박관우;나석주
    • 한국레이저가공학회지
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    • 제10권2호
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    • pp.25-28
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    • 2007
  • Rapidity and flexibility are very important in the electronic components industry. The laser process provides the industry with more rapidity and flexibility. For this reason, the laser process is considered as an acceptable method in terms of rapidity and flexibility. In this study, a wide range of experiments have been carried out on the gold wire-to-nickel thin film joining using the continuous wave fiber laser. In particular, changes in the shape of joint depending on the changes of a target point have been observed.

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An Electrochemical Approach for Fabricating Organic Thin Film Photoelectrodes Consisting of Gold Nanoparticles and Polythiophene

  • Takahashi, Yukina;Umino, Hidehisa;Taura, Sakiko;Yamada, Sunao
    • Rapid Communication in Photoscience
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    • 제2권3호
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    • pp.79-81
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    • 2013
  • A novel method of fabricating polythiophene-gold nanoparticle composite film electrodes for photoelectric conversion is demonstrated. The method includes electrodeposition of gold and electropolymerization of 2,2'-bithiophene onto an indium-tin-oxide (ITO) electrode. First, electrodeposition of gold onto the ITO electrode was carried out with various repetition times of pulsed applied potential (0.25 s at -2.0 V vs. Ag/AgCl) in an aqueous solution of $HAuCl_4$. Significant progress of the number density of deposited gold nanoparticles was confirmed from scanning electron micrographs, from 4 (1 time) to 25% (15 times). Next, electropolymerization of 2,2'-bithiophene onto the above ITO electrode was performed under controlled charge condition (+1.4 V vs. Ag wire, 15 $mC/cm^2$). Structural characterization of as-fabricated films were carried out by spectroscopic and electron micrographic methods. Photocurrent responses from the sample film electrodes were investigated in the presence of electron acceptors (methyl viologen and oxygen). Photocurrent intensities increased with increasing the density of deposited gold nanoparticles up to ~10%, and tended to decrease above it. It suggests that the surplus gold nanoparticles exhibit quenching effects rather than enhancement effects based on localized electric fields induced by surface plasmon resonance of the deposited gold nanoparticles.

GOLD WIRE BONDABILITY OF ELECTROLESS GOLD PLATING USING DISULFITEAURATE COMPLEX

  • Abe, Shinji;Watanabe, Hideto;Igarashi, Yasushi;Honma, Hideo
    • 한국표면공학회지
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    • 제29권6호
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    • pp.714-719
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    • 1996
  • For the fabrication of the circuits, contact or terminal areas are usually coated with nickel and gold. Usually, diluted palladium solution is applied to initiate electroless nickel plating on the copper circuits. However, the trace amounts of palladium remains on the resin and it causes the extraneous deposition. We confirmed that selectivity was greatly improved by the treatment with the strong reducing agents such as SBH or DMAB. Bondability was greatly influenced by the contents of phosphorus in the deposited nickel. Stabilizers in the electroless gold plating were also influenced the bonding strength. The baths containing cupferron or potassium nickel cyanide as a stabilizer showed superior bondability. The gold deposits having strong orientation with Au(220) and Au(311) showed good bond ability.

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Wire-bonding의 길이 변화에 따른 주파수별 특성 분석 (Analysis of Frequency Response Depending on Wire-bonding Length Variation)

  • 권은진;문종원;류종인;박세훈;김준철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.551-552
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    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

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