• Title/Summary/Keyword: Gold thin-film

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Study on Broadband HTS Antenna Array for Satellite Communication (위성통신용 광대역 고온초전도 배열 안테나에 관한 연구)

  • 정동철;윤창훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.770-775
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    • 2004
  • Although $High-T_c $superconducting HTS antennas have high efficiency and high gain, narrow bandwidth due to the high Q is the major limitation for application of satellite communication and mobile communication. Defining bandwidth as the frequency range over which standing wave ratio (SWR) is 2:1 or less, HTS antenna bandwidths are typically less than 1 %. Thus considerable effort has been focused on developing HTS antennas for broadband operation. In this work the HTS antenna array, using the bipin antenna which consisted of two triangle-radiation patches, was designed and fabricated using a ${YBa}_2{Cu}_3{O}_7x (YBCO)$ superconducting thin film on a MgO substrate for broadband operation. Also gold antennas with the same dimension as our HTS antennas were fabricated on the MgO substrate for the comparison. Experimental results for both antennas were reported in terms of radiation patterns, return losses, bandwidths and other various characteristics. The center frequency of HTS antennas was 20.28 GHz and the bandwidth obtained was significant 10 %.

Design and Fabrication of Low-Voltage Twisting-Type Thermal Actuators for Micromirrors (마이크로 거울의 구동을 위한 저전압 비틀림형 열구동기의 설계 및 제작)

  • Kim, Dong-Hyun;Park, Yong-Chul;Park, Seung-Ho;Kwon, Oh-Myoung;Choi, Young-Ki;Lee, Joon-Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.10
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    • pp.803-810
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    • 2009
  • Micromirrors have a wide range of applications such as optical switches, laser scanners, and digital projection displays. Due to their low performances and high costs, however, practical applications of micromirrors are quite limited. At present micromirrors demand not only a better design but also a simple fabrication process. In this study a twisting-type micromirror that can be driven by two thermal bimorph actuators bending in opposite directions is designed from electro-thermo-mechanical theories and fabricated through a simple MEMS process. Each actuator consists of $SiO_2$ and gold thin-film layers. Simplified analytical model has been built to optimize the performance of micromirror. Due to unexpected resistance increase of metal film and alignment mismatch during fabrication process, experimental rotation angles of micromirrors are about $11^{\circ}$ at applied voltages less than 0.6V. From numerical simulation and analytical studies, however, the next design can provide rotation angles over $20^{\circ}$ at the same applied voltage.

Temperature Behavior of Superconducting Fault Current Limiters during Quenches (퀜치 시 초전도 한류기의 온도)

  • Kim H.-R.;Sim J.;Hyun O.-B.
    • Progress in Superconductivity
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    • v.6 no.2
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    • pp.108-112
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    • 2005
  • We investigated temperature behavior of superconducting fault current limiters (SFCLs) during quenches. Knowledge on temperature behavior during quenches is important to the design of SFCLs, because the temperature of SFCLs is related to their stability. SFCLs were fabricated by patterning $Au/YBa_2Cu_3O_7$ thin films grown on sapphire substrates into meander lines by photolithography. A gold film grown on the back side of the substrate was patterned into a meander line, and used as a temperature sensor. The front meander line was subjected to simulated AC fault currents, and the back line to DC current. They were immersed in liquid nitrogen during the experiment for effective cooling. Overall, temperature at the back side of SFCLs was close to that at the front side. It was closer at the beginning of faults, and at lower applied voltages. Temperature distribution at the back side was even except at the edge, as at the front side. These results tell that the whole SFCL was heated to similar degree during quenches, and that effective cooling of SFCLs at the back side is as important to the stability of SFCLs as at the front side. The results could be explained with the concept of heat transfer within the film.

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The Electrical and Radiation Detection Properties of $Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ Structure ($Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ 구조의 전기적 특성 및 방사선 탐지 특성)

  • 최명진;왕진석
    • Electrical & Electronic Materials
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    • v.10 no.1
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    • pp.39-44
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    • 1997
  • Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

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CNT-PDMS Composite Thin-Film Transmitters for Highly Efficient Photoacoustic Energy Conversion

  • Song, Ju Ho;Heo, Jeongmin;Baac, Hyoung Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.297.2-297.2
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    • 2016
  • Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

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Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

  • Kim, Doo-Hyun;Kim, D.W.;Kim, K.S.;Moon, J.S.;KIM, H.J.;Kim, D.C.;Oh, K.S.;Lee, B.J.;You, S.J.;Choi, S.W.;Park, Y.C.;Kim, B.S.;Shin, J.H.;Kim, Y.M.;Shin, S.S.;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1220-1224
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    • 2007
  • The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

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Electrochemistry and Electrokinetics of Prussian Blue Modified Electrodes Obtained Using Fe(III) Complex

  • 문성배;문정대
    • Bulletin of the Korean Chemical Society
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    • v.16 no.9
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    • pp.819-823
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    • 1995
  • Thin films of two kinds of Prussian Blue (PB)-modified, using iron(Ⅲ) complex instead of conventional FeCl3, were prepared on a gold substrate and these films were able to be electrochemically reduced in potassium nitrate solution. In case of PB-modified films prepared from Fe(Ⅲ)-ethylenediamine-N,N'-diacetic acid (FeEN3+)/K3Fe(CN)6 solution, the mid-peak potential was 0.156 V in 0.1 M KNO3 and it was found that potassium ion migrates into or out of the film during the electrolysis. These films were shown to be electrochromic. These films exhibited smaller peak separation than those formed from Fe(Ⅲ)-tartaric acid (FeTA3+)/K3Fe(CN)6 system. The diffusion coefficient of Fe(CN)63-/4- redox couple, evaluated using the fabricated Au rotating disc electrode(rde) previously reported, was in good agreement with the existing data. Two experimental procedures, including the voltammetry at relatively low scan rates and the rde study, have been used in order to characterize the electrode kinetics. The electrode kinetics of some redox couples (FeEN2+-FeEN3+ and FeTA2+-FeTA3+) on both PB-modified thin films and bare Au electrode were studied using a Au rde. In all cases the rate constants of electron transfer obtained with the PB-modified film electrodes were only slightly less than those obtained for the same reaction on bare Au disc electrodes. The conductivities, as determined from the slopes of the i-V curves for a ca. 1 mm sample for dried PB-modified potassium-rich and deficient bulk samples pressed between graphite electrodes, were 6.21 × 10-7 and 2.03 × 10-7(Ω·cm)-1, respectively.

Contact Transfer Printing Using Bi-layer Functionalized Nanobio Interface for Flexible Plasmonic Sensing

  • Lee, Jihye;Park, Jiyun;Lee, Junyoung;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.413-413
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    • 2014
  • In this paper, we present a fabrication method of functionalized gold nanostructures on flexible substrate that can be implemented for plasmonic sensing application. For biomolecular sensing, many researchers exploit unconventional lithography method like nanoimprint lithography (NIP), contact transfer lithography, soft lithography, colloidal transfer printing due to its usability and easy to functionalization. In particular, nanoimprint and contact transfer lithography need to have anti-adhesion layer for distinctive metallic properties on the flexible substrates. However, when metallic thin film was deposited on the anti-adhesion layer coated substrates, we discover much aggravation of the mold by repetitive use. Thus it would be impossible to get a high quality of metal nanostructure on the transferred substrate for developing flexible electronics based transfer printing. Here we demonstrate a method for nano-pillar mold and transfer the controllable nanoparticle array on the flexible substrates without an anti-adhesion layer. Also functionalization of gold was investigated by the different length of thiol applied for effectively localized surface plasmonic resonance sensing. First, a focused ion beam (FIB) and ICP-RIE are used to fabricate the nanoscale pillar array. Then gold metal layer is deposited onto the patterned nanostructure. The metallic 130 nm and 250 nm nanodisk pattern are transferred onto flexible polymer substrate by bi-layer functionalized contact imprinting which can be tunable surface energy interfaces. Different thiol reagents such as Thioglycolic acid (98%), 3-Mercaptopropionic acid (99%), 11-Mercaptoundecanoic acid (95%) and 16-Mercaptohexadecanoic acid (90%) are used. Overcoming the repeatedly usage of the anti-adhesion layer mold which has less uniformity and not washable interface, contact printing method using bi-layer gold array are not only expedient access to fabrication but also have distinctive properties including anti-adhesion layer free, functionalized bottom of the gold nano disk, repeatedly replicate the pattern on the flexible substrate. As a result we demonstrate the feasibility of flexible plasmonic sensing interface and anticipate that the method can be extended to variable application including the portable bio sensor via mass production of stable nanostructure array and other nanophotonic application.

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Electrodeposition of Silicon in Ionic Liquid of [bmpy]$Tf_2N$

  • Park, Je-Sik;Lee, Cheol-Gyeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.30.1-30.1
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    • 2011
  • Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

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Comparison of Photoelectrode Properties Between $TiO_2$ Thin films Doped with Tantalum and Dispersed with Nanosize Gold (탄탈륨 도핑 및 나노사이즈의 금입자분산된 $TiO_2$ 박막에서의 광전극 특성 비교)

  • Yoon, Jong-Won;Jung, Kyung-Han;Koshizaki, Naoto;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.861-864
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    • 2004
  • 본 연구에서는 Ta이 도핑된 $TiO_2$$Au/TiO_2$ nanocomposite 박막을 co-sputtering법으로 제작하였다. Ta-doped $TiO_2$ 박막은 금흥석(rutile)에서 아나타제 상으로 변하는 구조를 유도하는 고용체를 형성했다. $Au/TiO_2$ nanocomposite film의 경우에는, 지름이 약 15 nm인 Au particles들이 $TiO_2$ matrix에 균질하게 분포되었다. Ta가 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 전극의 anodic photocurrents가 UV뿐만 아니라 가시광선 영역에서도 관찰되었다. Ta이 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 사이의 가시광선 영역에서 photoresponse는 계면 상태로 부터의 bandgap의 감소와 전자의 photoexcitation 때문이다.

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