• 제목/요약/키워드: Glass-to-metal contact

검색결과 40건 처리시간 0.029초

개량형 가동보에 적용하기 위한 하이브리드 강판/GFRP 패널 게이트의 강판게이트 표면형상에 따른 휨 및 계면 부착 특성 평가 (Flexural and Interfacial Bond Properties of Hybrid Steel/Glass Fiber Reinforced Polymer Composites Panel Gate with Steel Gate Surface Deformation for Improved Movable Weir)

  • 김기원;권형중;김필식;박찬기
    • 한국농공학회논문집
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    • 제57권2호
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    • pp.57-66
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    • 2015
  • The purpose of this study was to improved the durability of a improved movable weir by replacing the improved movable weir's metal gate with a hybrid steel/glass fiber reinforced polymer composites panel gate. Because the metal gate of a improved movable weir is always in contact with water, its service life is shortened by corrosion. This study made four type of hybrid steel/glass fiber reinforced polymer composites panel gate with different steel gate surface deformation (control, sand blast, scratch and hole), flexural. Fracture properties tests were performed depending on the steel gate surface deformation. According to the test results, the flexural behavior, flexural strength and fracture properties of hybrid steel/glass fiber reinforced polymer composites panel gate was affected by the steel panel gate surface deformation. Also, the sand blast type hybrid steel/glass fiber reinforced polymer composites panel gate shows vastly superior flexural and fracture performance compared to other types.

비정질 칼코게나이드 반도체 박막 경계면의 전기적 특성 (Electrical characteristics of the this film interface of amorphous chalcogenide semiconductor)

  • 박창엽
    • 전기의세계
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    • 제29권2호
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    • pp.111-117
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    • 1980
  • Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

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Al계 초소성합금과 Zr계 비정질합금의 마이크로 진동성형에 관한 연구 (A Study on the Micro Vibration Forming of Al-based Superplastic Alloy and Zr-based Bulk Metallic Glass)

  • 손선천;박규열;나영상
    • 한국공작기계학회논문집
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    • 제16권6호
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    • pp.193-200
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    • 2007
  • Micro forming is a suited technology to manufacture very small metallic parts(several $mm{\sim}{\mu}m$). Al5083 superplastic alloy with very small grains has a great advantage in achieving micro deformation under low stress due to its relatively low strength at a specific high temperature range. Micro forming of $Zr_{62}Cu_{17}Ni_{13}Al_8$ bulk Metallic glass(BMG) as a candidate material for this developing process are feasible at a relatively low stress in the supercooled liquid state without any crystallization during hot deformation. In this study, the micro formability of Al5083 superplastic alloy and bulk metallic glass, $Zr_{62}Cu_{17}Ni_{13}Al_8$, was investigated with the specially designed micro vibration forming system using pyramid-shape, V-shape and U-shape micro die pattern. With these dies, micro vibration forming was conducted by varying the applied load, time. Micro formability was estimated by comparing the hight of formed shape using non-contact surface profiler system. The vibration load effect to metal flow in the micro die and improve the micro formability of Al5083 superplastic alloy and $Zr_{62}Cu_{17}Ni_{13}Al_8$ bulk Metallic glass(BMG).

SiOC 절연박막 특성에 의존하는 ITO 투명박막의 전기적인 특성과 오믹접합의 효과 (Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator)

  • 오데레사
    • 한국재료학회지
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    • 제25권7호
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    • pp.352-357
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    • 2015
  • To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

임피던스 측정용 측벽전극 내장형 마이크로채널 제작 (Fabrication of Micro-Channel with Embedded Electrode for Impedance Measurement)

  • 강길환;노용래;김규만
    • 한국기계가공학회지
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    • 제5권3호
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    • pp.11-16
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    • 2006
  • A new method to fabricate metal electrodes on side wall of the microchannel is presented. Electrical signal can be measured by the metal electrodes on channel side wall when microparticles pass through a polymer microchannel. 3 dimensional metal electrodes on channel side wall could be fabricated by local deposition of metal through a shadowmask and inclined evaporation. The polymer microchannel with side wall electrodes could be precisely aligned onto metal contact patterns on pyrex glass. The impedance measurement test showed possibility of electrical signal measurement using the fabricated device.

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잉크젯 프린팅 기술을 이용한 전도성 폴리머 저항의 제작 (Fabrication of Conductive Polymer Resistors Using Ink-jet Printing Technology)

  • 이상호;김명기;신권용;강경태;박문수;황준영;강희석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.98-99
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    • 2007
  • This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

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고 투과 C 형 개구를 이용한 나노 크기 패턴 구현 (Nano-size Patterning with a High Transmission C-shaped Aperture)

  • 박신증;김용우;이응만;한재원
    • 한국정밀공학회지
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    • 제24권11호
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    • pp.108-115
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    • 2007
  • We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

연속적 전기습윤 효과를 이용한 액체금속 액적의 채널 내 거동 (Movement of Liquid Metal Droplet in Channel by Continuous Electrowetting Effect)

  • 백승범;원동준;김호진;김준원
    • 한국정밀공학회지
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    • 제33권3호
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    • pp.217-223
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    • 2016
  • In this paper, the movement of a liquid metal droplet in a channel by continuous electrowetting effect is analyzed. The channel is fabricated using two glass substrates and silicone rubber as spacers, and a mercury droplet and dilute sulfuric acid are added into the channel. The droplet is moved according to voltage applied at both ends of the channel through an electrolyte. According to the shape of the droplet and the applied voltage, the velocity of the droplet is changed. The velocity is proportional to the applied voltage and inversely proportional to the length of the droplet, both theoretically and experimentally. Contact angle hysteresis and a meniscus change were also found in the moving state. This implies the existence of a threshold in movement by Laplace pressure difference. The experiment indicated that the sliding angle was inversely proportional to the width of the droplet but that the voltage threshold was proportional to the width.

Metal Surface Treatment Effects on Screen Printed Silicon Solar Cells

  • Chakrabarty K.;Mangalaraj D.;Kim K. H.;Dhungel S. K.;Park J. H.;Singh S. N.
    • Transactions on Electrical and Electronic Materials
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    • 제4권4호
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    • pp.22-25
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    • 2003
  • High series resistance due to the presence of glass frit is one of the major problems for screen printed silicon solar cells. Cells having electrical parameters below the prescribed values are usually rejected during solar module fabrication. Therefore, it is highly desirable to improve the electrical parameters of the silicon solar cells and thereby to increase the overall production yield. It was observed that, the performance of low quality mono-crystalline silicon solar cells made by standard screen printing technology could be improved remarkably by novel surface treatment. We have chemically treated the surface using sodium hydroxide (NaOH) and silver nitrate ($AgNO_3$) solutions. NaOH treatment helps to reduce the series resistance by decreasing the presence of excess glass frit on the top silver grid contact. The $AgNO_3$ treatment is used to reduce the series resistance comes from the deposition of silver on the grids by filling the holes present (if any) within the grid pattern.

금속기판에서 재결정화된 규소 박막 트랜지스터 (Recrystallized poly-Si TFTs on metal substrate)

  • 이준신
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.30-37
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    • 1996
  • Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

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