• Title/Summary/Keyword: Glass-frit

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Stabilization of Heavy Metals in Glasses Containing EAF Dust (전기로 분진이 첨가된 유리의 중금속 안정화 특성)

  • Eun, Hee-Tai;Kang, Seung-Gu;Kim, Yoo-Taek;Lee, Gi-Kang;Kim, Jung-Hwan
    • Journal of the Korean Ceramic Society
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    • v.41 no.11
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    • pp.851-857
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    • 2004
  • The stabilizing characteristics of heavy metals in the silicate glass (SD), borosilicate glass (BD), and leadsilicate glass (PD) containing Electric Arc furnace (EAF) dust were studied by the Toxic Characterization Leaching Procedure (TCLP) test. Also, the dependence of the amount of EAF dust upon structural changes of SD, BD, and PD glasses and the TCLP results were investigated by the XRD and FT-IR spectroscopy. In the XRD results, all of SD, BD, and PD specimens containing dust up to 30 wt% were amorphous without crystallizing. In the TCLP test, the concentration of heavy metals leached from the glasses increased with the amount of EAF dust added. The SD specimen series showed the lowest heavy metal leaching and the heavy metal leachate of the PD specimens were lower than those of the BD specimens. But, the Pb leaching from the PD specimens was the highest in the PD glass composition due to the high Pb content. The value of oxygen/network former ratio could be used to compare the chemical durability within the same glass series, but not proper to do between the different glass series. Adding the EAF dust to the SD mother glass, decreased the Si-O-Si symmetry and increased the non-bridging oxygen, which weakened the structure and decreased the chemical durability of glasses. In the BD series glasses, the addition of EAF dust caused the structural changes from tetra-borate group to di-borate group and the formation of the 2-dimensional layer structure of pyre- and ortho- borate, which decreased the chemical durability of glasses. It is concluded that SD series glass among the 3 kinds of glasses is the most effective to stabilize the heavy metals of EAF dust.

Thermal Behavior and Fabrication of Pb-free Glass Frit for PDP and Electrical Application (PDP 및 전자부품용 Pb-free 저융점 유리 프릿의 제조 및 열적 거동 관찰)

  • 황명익;정경원;강민수;최범진;신현규;이희수;박신서
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.195-195
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    • 2003
  • PDP, FED 등의 디스플레이와 각종 IC 칩부품에 적용 가능한 저융점 유리 프릿 중에서 환경규제가 이루어지고 있는 납성분이 포함되어 있지 않은, Bi계 유리 프릿의 열적 거동 연구를 행하였다. 열처리 온도에 따른 열거동에 따라 프릿의 소성온도 및 미세구조가 결정되므로, 열처리 온도에 따른 유리 프릿의 젖음각을 측정하였고, DTA와 TMA를 통해 유리전이온도, 연화점, 열팽창계수 변화 경향성을 관찰하였다. 본 연구에서 제조된 유리는 조성에 따라 전이온도가 390-50$0^{\circ}C$, 연화점이 400-55$0^{\circ}C$, 열팽창계수가 65-120$\times$10-7/$^{\circ}C$ 범위를 나타내었으며, 고온현미경 측정 결과 Pb-계 유리와 비교시 유사한 열거동을 나타내었다.

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The Determination of Screen Printing Main Factors for Array of Vacuum Glazing Pillar by using Factorial Design of Experiments (요인 실험계획법을 이용한 진공유리 지지대 배치용 스크린 인쇄 주요공정변수 설정)

  • Kim, Jae Kyung;Jeon, Euy Sik
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.1
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    • pp.47-51
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    • 2013
  • The screen printing is a process that is widely used in manufacturing process of various fields such as flexible devices, portable multimedia devices, OLED, and the solar cell. The screen printing method has been studied as a method for forming the high precision micro-pattern, making the low-cost manufacturing process and reducing cost through improvement of productivity. It is applicable to deposit and forming the pillars which are one of the core element for comprising vacuum glazing. In this paper, by using the paste of the glass frit base, the screen printing was performed. We analyzed the effect for the printing process to deposit pillar paste on the screen printing parameters by the factorial experimental design. The polynomial predicting the volume of the printed supporting pillars was drawn by using screen printing.

Screen printed contacts formation by rapid thermal annealing in multicrystalline silicon solar cells

  • Kim, Kyung hae;U. Gangopadhyay;Han, Chang-Soo;K. Chakrabarty;J. Yi
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.3
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    • pp.120-125
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    • 2002
  • The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.

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Dielectric properties of (BaCa)(ZrTi)$_3$ ceramics for multilayer ceramic chip capacitor using Y5V (Y5V용 적층 칩 캐패시터를 위한 (BaCa)(ZrTi)$O_3$ 세라믹스 유전 특성)

  • Yoon, Jung-Rag;Lee, Serk-Won;Lee, Heun-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.75-78
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    • 2002
  • The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

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The Application and Fabrication Process of Cold Cathode Lamp Using a FEA (FEA를 이용한 Cold Cathode Lamp의 제작 공정 연구와 그 응용성)

  • Park, Suhg-Hyun;Hong, Kun-Jo;Jun, Seok-Hwan;Kwon, Sang-Jik;Lee, Neung-Hun;Park, Jae-Bum
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1800-1802
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    • 2000
  • 본 연구에서는 냉음극 발광 소자인 FEA를 이용하여 Cold Cathode Lamp 제작과 그 구조에 대해서 연구하였다. Anode plate에는 ZnO:Zn 형광체를 전기영동법으로 증착한 후 tube slabs와 anode plate를 frit glass를 이용하여 접합하였다. FEA와 substrate의 bonding, addressing을 위한 wire bonding, substrate와 집속전극, setter를 stem base의 외부전극에 연결하기 위한 spot welding, tube와 stem base를 glass melting method로 접합 공정을 하였다. 진공배기 시스템에 배기판을 연결하여 ${\sim}10^{-7}$torr까지 배기한 후 heater를 이용하여 배기관을 tip-off하였다. 최종적으로 진공을 유지하기 위해 getter를 RF 고주파로 활성화하였다. 결론적으로 lamp외 특성을 비교분석한 후 휘도 및 발광효율을 향상시키기 위한 구조절 개선과 방안을 고찰하였다.

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유전체 재료용 Phosphate계 유리-BNT($BaO-Nd_{2}O_{3}-TiO_{2}$)계 세라믹 복합체의 특성

  • 이회관;이용수;황성건;강원호
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.234-239
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    • 2004
  • 본 연구에서는 마이크로파용 유전재료로서 널리 사용되고 있는 BNT($BaO-Nd_{2}O_{3}-TiO_{2}$)계 세라믹스를 기본조성으로 하고, 저융점의 phoshpate계 유리 프릿의 첨가를 통해 LTCC(Low Temperature Cofired Ceramic)에 적용 가능한 유전율을 가진 조성을 개발 하고자, $70P_{2}O_{5}-5B_{2}O_{3}-(25-x)BaO-xNa_{2}O$ 유리를 제조 및 특성을 평가하였다. 또한, BNT계 세라믹스에 glass frit을 5 - 15 wt% 범위에서 첨가하고, $800 - 950^{\circ}C$의 온도범위에서 소결하여 제조된 유리-세라믹 복합체의 소결특성 및 유전특성을 조사하였다.

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The electrical properties according to rare-earth and glass frit content of high voltage mutilator chip capacitor with X7R properties (고압용 X7R 적층 칩 캐패시터의 희토류 및 유리프릿 첨가에 따른 전기적 특성)

  • Yoon, Jung-Rag;Lee, Serk-Won
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.92-93
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    • 2007
  • X7R 고압용 적층 칩 캐패시터 제작을 위한 내환원성 유전체 조성물에서 희토류인 $Er_2O_3$을 0.6 mol% 첨가한 후 유리프릿 첨가시소결특성 및 절연저항이 향상됨을 확인 할 수 있었다. 회토류인 $Er_2O_3$을 첨가시 유전율 및 절연저항이 감소하는 경향을 보이나 $85^{\circ}C$ 영역에서 온도특성을 향상시키는 것을 확인하였으며 고압 적층 칩 캐패시터 제작시 온도 특성이 우수한 재료를 개발 할 수 있었다.

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Dielectric properties of dielectric for Mutilayer Ceramic Capacitor with low noise (저소음 특성을 가지는 적층 칩 세라믹 캐패시터용 유전체의 유전특성)

  • Yoon, Jung-Rag;Lee, Seog-Won;Lee, Heun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.284-285
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    • 2007
  • 본 논문에서는 저소음 및 저 신호 왜곡 특성을 가지는 내환원성 유전체 원료를 개발하기 위하여 $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$$CaTiO_3$, $SrTO_3$, $BaTiO_3$를 첨가하여 이에 따른 유전 특성을 조사하였다. 첨가량의 조절 및 glass frit 첨가를 통하여 환원성 분위기에서도 유전율 80 ~ 100, 절연저항 (R*C) 500[ohm-F] 이상의 유전특성을 얻었다. 본 연구결과로 얻어진 유전재료를 적용하면 무소음 및 저 신호 왜곡 특성을 가지면서도 고 신뢰성의 MLCC를 제작할 수 있을 것으로 예상된다.

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Low-Temperature Sintering and Phase Change of BaTi4O9-Based Ceramics Middle-k LTCC Dielectric Compositions by Glass Addition (Glass 첨가에 의한 BaTi4O9계 중유전율 LTCC 유전체의 저온소결 및 상변화 거동)

  • Choi, Young-Jin;Park, Jae-Hwan;Nahm, Sahn;Park, Jae-Gwan
    • Journal of the Korean Ceramic Society
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    • v.41 no.12 s.271
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    • pp.915-920
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    • 2004
  • The main phase of $BaTi_{4}O_9$-based ceramics was transformed to $BaTi_{5}O_{11}$ caused by the sintering with borosilicate glass, which was analyzed by using XRD and TEM. We considered that the phase change from $BaTi_{4}O_9$-based ceramics to the Ti-rich $BaTi_{5}O_{11}$ phase resulted from borosilicate glass selective absorbing of Ba ions from the $BaTi_{4}O_9$. In these results, we found a dependence on the amounts of the glass frits and the annealing temperature, and the phase change is also dependent of the main phases of $Ba_{4}Ti_{13}O_{30},\;and\;Ba_{2}Ti_{9}O_{20}$, which are involved in the $BaO-TiO_2-based$ Ti-rich region. In the case of sintering of middle- and high- permittivity material with additional glass frits for middle- and high- dielectric coefficients LTCC composition, control of weight fraction of the glass frits accompanying low-temperature sintering property with appropriate phase change is required.