• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.526-529
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• 2002

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.1-5
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• 2010

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.170-174
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• 2017

In 3 electrode reflective displays using a plastic substrate, unstable packaging induces particle clumping and optical degradation due to external air inflow and electronic ink evaporation. In this work, we fabricate 3 electrode electronic paper using glass wafer, ITO/plastic film, and ITO/glass/gas barrier film as an upper substrate after injecting electronic ink onto the lower substrate. Then, we studied its properties. After operating under stress conditions for 336 hours at $85^{\circ}C$ and 75% humidity, the reflectivity of driven e-paper panels with white color was 25.5% for the panels using glass wafer, 22.5% for plastic film including a gas barrier layer, and 16% for plastic film only. From these optical properties, we conclude that gas barrier film improves upper film isolation as a desirable packaging method.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.33-36
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• 1986

The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1634-1637
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• 2008

We will discuss encapsulation of OLEDs on both flexible and rigid glass substrates. Accelerated testing at 6CC/90RH and 85C/85RH is compared and acceleration factors for OLED and Calcium test samples are discussed.We have tested the stability and performance of our barrier coating to much higher temperatures: up to 140 C. Water Vapor Transmission rates at temperatures from 60 to 140 C are presented. Rates and methods for low cost manufacturing on a large scale are analysed.

• Korean Journal of Microbiology
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• v.12 no.3
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• pp.147-148
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• 1974

A small amount of Duco cement or Elmer's clear cement was dropped on a slide glass and immediately spread with a glass rod or woden stick a thin film on the surface. After approximately 1 minute a small amount of rubber cement was spread on the top of the film of Duco cement using the same method as described earlier. It was important that the rubber cement be smeared before the Duco cement dried out. These two kinds of cements must not be mixed. It was better to make the film of the rubber cement slightly thicker than the film of Duco cement. This composite film may be used up to several months after preparation. The sample leaf was placted on the slide, prepared with adhesive and the leaf surface was passed on the film with the thumb. The pressing was done so the leaf surface was completely in contact with the film. Then the leaf was peeled from the slide.

• Journal of the Korean Solar Energy Society
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• v.40 no.4
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• pp.13-22
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• 2020

As the supply of photovoltaic (PV) increases worldwide, the cumulative installations in 2018 were 7.9 and 560 GW in Korea and the world, respectively. Typically, when the ground on commercial PV modules is installed, the area is limited; hence, new designs of PV modules are required to install additional PVs. Among the new design of PV modules, lightweight PV modules can be utilized in PV systems, such as buildings, farmlands, and floating PV. Concerning the investigation of lightweight PV modules, several studies on materials for replacing low-iron tempered glass, which comprises approximately 65% of the PV module weight, have been conducted. However, materials that are used as substitutes for glass should possess similar lightweight properties and reliability as glass. In this study, experimental tests were performed to evaluate the applicability of ethylene tetrafluoroethylene (ETFE) film with excellent resistance to water and aging as a front material of PV modules. The transmittance and ultraviolet properties of the ETFE film were determined and compared with those of glass. A 1-cell module and laboratory-scale 24-cell module were manufactured using the ETFE film and glass, and the electrical output was measured and analyzed. Furthermore, damp heat and thermal cycle tests were conducted to evaluate the reliability of the ETFE film module. Based on the experimental results, the electrical output and reliability of the ETFE film module were similar to those of the glass module, and the ETFE film could be used as the front material of PV modules.