• Journal of the Korean GEO-environmental Society
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• v.15 no.1
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• pp.63-68
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• 2014

In this study, it was found that determined the photocatalytic degradation of antibiotics (lincomycin, LM) with various catalyst composite of titanium dioxide ($TiO_2$), hydroxyapatite (HAP) and germanium (Ge) under UV-A irradiation. At first, various type of complex catalysts were investigated to compare the enhanced photocatalytic potential. It was observed that in order to obtain the removal efficiencies were $TiO_2/HAP/Ge$ > $TiO_2/Ge$ > $TiO_2/HAP$. The composition of $TiO_2/HAP/Ge$ using a statistical approach based on mixture analysis design, one of response surface method was investigated. The independent variables of $TiO_2$ ($X_1$), HAP ($X_2$) and Ge ($X_3$) which consisted of 6 condition in each variables was set up to determine the effects on LM ($Y_1$) and TOC ($Y_2$) degradation. Regression analysis on analysis of variance (ANOVA) showed significant p-value (p < 0.05) and high coefficients for determination value ($R^2$ of $Y_1=99.28%$ and $R^2$ of $Y_2=98.91%$). Contour plot and response curve showed that the effects of $TiO_2/HAP/Ge$ composition for LM degradation under UV-A irradiation. And the estimated optimal composition for TOC removal ($Y_2$) were $X_1=0.6913$, $X_2=0.2313$ and $X_3=0.0756$ by coded value. By comparison with actual applications, the experimental results were found to be in good agreement with the model's predictions, with mean results for LM and TOC removal of 99.2% and 49.3%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.127.2-127.2
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• 2016

연구된 Si위의 흡착원자들의 확산 메커니즘들에 비해 Ge 표면에서의 확산 메커니즘은 잘 알려져 있지 않다. 최근 연구에 따르면, 수소가 덮인 Ge(110) 표면에서 그래핀 결정 핵생성은 비등방적이며, 낟알 둘레없이 웨이퍼 크기로 성장시킬 수 있음을 보였다. 본 연구에서는 VASP(Vienna Ab-initio Simulation Package)의 NEB(Nudged Elastic Band) 방법을 이용하여 수소가 덮인 Ge(110) 표면과 청결한 표면에서 탄소원자의 확산 과정과 확산에 따른 에너지 장벽을 계산 하였다. 계산 결과 수소가 덮인 표면에서의 탄소원자 확산은 체인 방향으로 각각 3.29 eV, 2.67 eV의 에너지 장벽을 가지고 청결한 표면에서는 탄소원자가 게르마늄 연결을 치환하며 확산한다. 이때 에너지 장벽은 0.82 eV이고 치환된 게르마늄이 확산할 때는 각각 0.64 eV, 0.59 eV의 에너지 장벽을 넘어야 한다. 결과적으로 수소가 덮인 표면에서보다 청결한 표면에서 탄소 확산 에너지 장벽이 낮으며, 청결한 표면에서는 탄소가 게르마늄을 치환하고 치환된 게르마늄이 확산할 확률이 높음을 알 수 있었다.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.993-995
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• 1998

We fabricated fiber gratings with three different Ge-doped fibers exposed to 60atm pressure of Hz gas at 90"C for different times and studied the effects of Ge-doping concentration and $H_2$ loading time on the growth of gratings. According to experiments. the growing effect of hydrogen loading on high Ge-doped fiber was great.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1028-1031
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• 2009

High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with $Si_2H_6$ and $GeF_4$ around at $500^{\circ}C$ directly. Its thickness uniformity was ~ 3% on the entire substrate area. N-channel mobility of ~30 nm thick bottom-gate TFTs exceeded 20 $cm^2$/Vs without any further crystallization.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.75-76
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• 2006

New PM route via bulk mechanical alloying is developed to fabricate the solid solution semi-conductive materials with $Mg_2Si_{1-x}Ge_x$ and $Mg_2Si_{1-y}Sn_y$ for 0 < x, y < 1 and to investigate their thermoelectric materials. Since $Mg_2Si$ is n-type and both $Mg_2Ge$ and $Mg_2Sn$ are p-type, pn-transition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n-and p-type materials.

• Polymer(Korea)
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• v.34 no.6
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• pp.588-593
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• 2010

New seven acrylic monomers with covalently bonded silicon, germanium, and tin were prepared for high refractive index materials. The monomers were copolymerized with a cross-linkable comonomer (Trimer) to prepare UV-films for optical characterization. The refractive index of the copolymers increased in proportion to the monomer content and extrapolated to determine that of homopolymer. $Ph_3Si$, $Ph_3Ge$, and $Ph_3Sn$ groups contributed to increase the refractive index of acrylic polymer, in which $Ph_3Sn$ was more effective than $Ph_3Ge$. The index increment confidently occurred with $Bu_3Sn$ attachment in comparison with aliphatic acrylic polymers. $Ph_3SnS$-attached acrylate polymer showed a refractive index of 1.671 at 589 nm. The index change was similarly observed at various different wavelengths (656, 830, 1310, and 1550 nm).

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.639-643
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• 1995

The temperature dependence of the dark conductivity was studied on undoped hydrogenated amorphous germanium (a-Ge : H) over the range from 297 to 423 K. The pre-exponential factor $\sigma$$\_$0/ and activation energy E$\_$C/-E$\_$F/ are determined by an Arrhenius plot. The Arrhenius plot of the electrical conductivity shows a kink around the kink temperature and then is composed of two exponential functions. The obtained statistical shift ${\gamma}$$\_$F/ was about 8.65${\times}$10$\^$-3/eV/K and the pre-exponential factor $\sigma$$\_$0/ was about 2$\Omega$$\^$-1/cm$\^$-1/. A temperature dependent defect density is numerically calculated from the conductivity data. A change of the defect density is observed in the factor of about two in the range of the experimental temperature.

• Journal of the Korean Chemical Society
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• v.41 no.8
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• pp.399-405
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• 1997

We examined the determination of trace amount of germanium in rocks and sediments by hydride vapor generation-ICP-AES. Germanium is formed volatile compounds with various types of acid reagents, but volatilizing of germanium was decreased in the presence of $H_3PO_4$. Sediments and rocks can be dissolved by mixed acids of $HF-HNO_3-H_3PO_4$ without volatilizing loss of germanium in open digestion system and it was possible to determine germanium by hydride generation-ICP-AES without further sample treatment. Detection limit of Ge is reached to 0.08 ppb under the condition of 5M $H_3PO_4$ and 1% $NaBH_4$ as a supporting acid and a reducing reagent, respectively. The measured values by hydride generation-ICP-AES agreed well with the reference values of SRMs as well as the values determined by solution nebulization-ICP-MS.

• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.6
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• pp.930-935
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• 2004

This study was carried out to determine the antimutagenic effect of soybean sprouts cultured in water containing germanium by Ames test and SOS chromotest. Germanium significantly inhibited the mutagenicity induced by aflatoxin B$_1$ (AFB$_1$) in Salmonella typhimurium TA100 by Ames test, and 4-nitroquinoline-N-oxide (4-NQO) in SOS chromotest. Juice from germanium treated soybean sprouts (GTS) inhibited 57∼75% mutagenicity induced by AFB$_1$, N-methyl-N'-nitro-N-nitrosoguanidine (MNNG) and 4-NQO compared with 20∼48% inhibition rate of control soybean sprouts (germanium non-treated soybean sprouts, GNTS) in the Ames test. Also, methanol extracts from GTS inhibited 65% mutagenicity induced by AFB$_1$ in Salmonella typhimurium TA100, and 51% mutagenicity by 4-NQO in SOS chromotest. Therefore, it suggests that GTS has strong potential antimutagenic effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1080-1086
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• 2005

We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.