• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.318-323
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• 2015

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

• Nuclear Engineering and Technology
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• v.7 no.2
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• pp.85-94
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• 1975

The n-type germanium crystals have been irradiated by $^{60}$ Co gamma-ray with 647 Mrad at room temperature for compensation. The Ge(${\gamma}$) detectors were fabricated from the gamma-ray irradiated germanium single crystals. The detector characteristics of the Ge (${\gamma}$) detectors were comparable to those of thin Ge(Li) detectors and high purity germanium detectors. The thermal stability of the Ge (${\gamma}$) detector showed a feasibility for ambient temperature storage.

• Journal of Ginseng Research
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• v.29 no.3
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• pp.145-151
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• 2005

This study was carried out to determine the optimal submerged culture conditions for production of ginseng root containing germanium using plant tissue culture technology. The ginseng (Panx ginseng C.A. Meyer) .cot induced by plant growth regulators of 0.5 mg/L BAP and 3.0 mg/L NAA was cultured on SH medium and the effects of various $GeO_2$ concentrations, addition time of $GeO_2$ and pH of medium were investigated on fresh weight, saponin production and germanium accumulation in ginseng root. Optimal $GeO_2$ concentrations for fresh weight, saponin and germanium content were 10, 0 and 110ppm, respectively. When $GeO_2$ was added after 2 weeks cultivation of ginseng root, germanium content was higher than that of adding $GeO_2$ at the initial cultivation time, but saponin content and fresh weight were lower. pH 5.5 was found to be the most favorable condition for the growth of ginseng root and germanium accumulation, but saponin production was best at pH 6.0.

• The Korean Journal of Food And Nutrition
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• v.22 no.4
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• pp.701-707
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• 2009

This study was conducted to investigate the effects of Ge(germanium) treatment on rice quality. Rice samples were divided into the following treatment groups: control(CON: cultivated without Ge), Ge-1(cultivated with 200 kg of rough stone powder containing 1.6 mg/kg germanium per 10 ha), and Ge-2(cultivated with 500 kg of rough stone powder containing 1.6 mg/kg germanium per 10 ha). The mean total Ge level in the Ge-2 sample was 20.47 ppb. The levels of Ca and Na in the Ge-2 rice increased by 65.12 and 110.28%, respectively, when compared to the control, whereas the Zn, Mn, Fe, Mg and K content decreased by 11.44~30.50%. No significant difference in the percentage weight of C and O was observed among samples. The order of the percentage weight of P, S, and Cl was Ge-2>Ge-1>CON. The free amino acids were higher in samples from the Ge-1 and Ge-2 groups than in samples from the control. The GABA($\gamma$-aminobutyric acid) amount in the Ge-2 products was significantly high compared to other groups. The micro structure of Ge-2 showed a firmer network than the control and had a macroporous structure. Conversely, the Ge-2 products had higher scores for stickiness, hardness and overall taste when compared to the other groups. These results suggest that rice treated with rough stone powder containing germanium can be used in the production of commercially-desired functional rice.

• Journal of Ginseng Research
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• v.31 no.3
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• pp.154-158
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• 2007

In order to increase the content of germanium in ginseng adventitious roots, the effects of chelating agents on germanium content and root growth were investigated in the submerged cultures of ginseng adventitious roots. Chelating agents such as citric acid, oxalic acid, phosphoric acid, EDTA (Ethylenediamine tetraacetic acid) or EGTA (Ethylene glycol-bis $({\beta}-aminoethylether)-tetraacetic$ acid) were administrated in the submerged culture of ginseng root containing 50 ppm $GeO_2$. After 6 weeks of cultivation, fresh weight, germanium and saponin contents in the roots were analyzed. Among chelating agents, addition of 1.0mM phosphoric acid was found to be best for germanium accumulation. Under this condition, germanium content increased 1.4 times as compared to that of the control. The germanium content in the adventitious roots also increased with addition of EDTA or EGTA, while they inhibited the growth of ginseng adventitious root. Citric and oxalic acids were not effective for increasing germanium content in adventitious roots. As the results, it suggests that the phosphoric acid can be proved as the optimal agent for the enhancement of germanium accumulation in ginseng adventitious roots. These results can be served as a guideline for the mass production of ginseng adventitious roots containing germanium by large-scale production.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Analytical Science and Technology
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• v.8 no.3
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• pp.371-374
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• 1995

An organic germanium compound, Ge-132, was reported to have interferon inducer activity, anti-tumor activity and anti-viral activity. ICP, AA and colorimetry methods were used for the determination of germanium in Ge-132. However these methods have a problem that they only give an information on the total amount of germanium element, and consequently Ge-132 connot be distinguished form toxic inorganic Ge compounds. To overcome this problem, ion chromatography was used to analyze Ge-132. Ge-132 was separated on Ionpac AS4A column with 1.3mM $Na_2B_4O_7$ buffer(pH=9.2) solution as an eluent and detected by the conductivity detector. Correlation coefficient of the calibration curve was 0.999 and the detection limit measured at S/N ratio of 3 was 50pmol. This method was applicable to the analysis of Ge-132 raw material and Ge-132 preparations.

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1543-1548
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• 2005

Two isostructural new alkaline earth germanium nitrides, $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, were obtained as single crystals from constituent elements in molten Na. They both crystallize in space group $P_{mmn}$ (No. 59) with a = 4.0007(8), b = 17.954(3), c = 9.089(2) $\AA$, Z = 2, and a = 4.1620(2), b = 18.841(1), c = 9.6116(5) $\AA$, Z = 2, for $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, respectively. Their crystal structure contains features for both Zintl and nitride phases: zigzag anionic chain of $_{\infty}Ge^{2-}$, and dumbbell-shaped bent anion of ${GeN_2}^{4-}$. Counter cations of Sr or Ba wrap these anionic units in a channel-like arrangement. Unlike in other germanium nitrides, bond lengths of both Ge-N arms of the ${GeN_2}^{4-}$, are same in $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$.

• Korean Journal of Medicinal Crop Science
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• v.3 no.1
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• pp.45-49
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• 1995

This study was carried out to examine the germanium contents of Angelica keiskei Koidz. and A. acutiloba Kitagawa and to intend to increase its contents while those leaf explants were culturing on MS medium supplemented with organic and inorganic germanium. Ge content of Agelica keiskei Koidz. was 2.1 times higher than that of A. acutiloba Kitagawa. Digestion was done quickly at high temperature, but Ge content was decreased. Callus formation of A. acutiloba Kitagawa was better than that of A. keiskei Koidz. Callus formation of both plants was good in order of pH 5.7, pH 5.4, and pH 6.0. But shoots from callus were formed frequently in A. keiskei Koidz., especially at pH 5.7. Callus formation of both plants was good up to 5 ppm of inorganic ($germanium(GeO_2),$ retarded at 10 ppm, and rarely formed at 100 ppm, but was good up to 10ppm of organic germanium retarded at 50 ppm and formed some-what even at 100 ppm.