• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.223-228
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• 2012

In this study, a fiber-optic pH sensor based on a pH sol-gel film is fabricated. The sol-gel film is made by co-polymerizing tetramethoxysilane, trimethoxymethylsilane, ethanol and distilled water. As a pH indicator, a neutral red is immobilized in a thin porous film formed by the sol-gel process. The pH change in a sensing probe gives rise to a change in the color of the pH sol-gel film, and the absorbance of reflected light through the pH sol-gel film is also changed. By using a spectrometer, therefore, the spectra of reflected lights in the sensing probe with different pH values are measured. Also, the relationships between the pH values and the absorbance are analyzed on the basis of the color variations of the pH sol-gel films. In repeated experiments, the fiber-optic pH sensor shows that it has reversibility, a high reproducibility and a wide absorbance change in a pH range from pH 5 to 9. Also, we confirmed that the fabricated pH sol-gel film exhibits a fast response time, little or no pH indicator leaching and a dynamic range of 2.04 dB from pH 5 to 9. Based on the results of this study, a fiber-optic pH sensor can be developed for the pH monitoring in the harsh environments.

• Journal of Sensor Science and Technology
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• v.28 no.5
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.2
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• pp.145-150
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• 2014

This study investigates the preparation of anti-reflective (AR) coating film to improve the efficiency of solar cell. The AR coating film was successfully obtained by dip-coating with AR coatings prepared by sol-gel method. Fluoroalkylsilane was additionally introduced into the coatings to give the self-cleaning effect of AR coating film. We performed the abrasion test, pencil scratch hardness test and cross-cut test to identify the mechanical strength of AR coating film. As the results, the transmittance of AR coating films with 9.07, 18.13 and 27.20 of IPA/MTMS molar ratios were 93.1, 93.6 and 95.3%, respectively. The water contact angle and transmittance of AR coating film increased by the introduction of hydrophobicity. The prepared AR coating film shows the high level of abrasion, hardness and adhesion. The IPA/MTMS molar ratio of 27.20 and the withdrawing speed range of 0.20 ~ 0.28cm/sec are the optimal coating condition in terms of the transmittance and mechanical strength of AR coating film.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.623-630
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• 1996

A Sol-gel derived ferroelectric PbTiO3 thin film was synthesized by using diethanolamine (DEA) as a comple-xing agent. Surface chemical analyses were examined in order to study the effect of heating temperature on the composition of thin film by EPMA and XPS. A rapid volatilization of lead was observed in the films fired at $700^{\circ}C$ or higher and the ratio of Pb:Ti was found to be 34:66. A depth profile by Ar+ showed that the Ar sputtering decreased Pb amount of inner part of the film resulting in Ti-rich phase near the surface of the film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.178-183
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• 2004

PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.676-677
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• 2006

Synthesis of zinc oxide nanorods, sheets and flower like structure were done by the sol-gel method using zinc acetate dihydrate and sodium hydroxide at $80^{\circ}C$ with 12 hours refluxing time nanorods, in case of as synthesized powder, with diameter of 20-60nm. Annealing at higher temperature (300 and $500^{\circ}C$,) in air ambient changes the morphology to sheet and flower like structure. The standard peak of zinc oxide was observed in IR at $523cm^{-1}$. The UV-VIS spectroscopy of zinc oxide shows a characteristic peak at 375nm.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.251-257
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• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.