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http://dx.doi.org/10.4313/JKEM.2004.17.2.178

Ferroelectirc Properties of Sm-doped PZT Thin films  

손영훈 (중앙대학교 전자전기공학과)
김경태 (중앙대학교 전자전기공학과)
김창일 (중앙대학교 전자전기공학과)
이병기 (인천기능대학 전기계측제어과)
장의구 (중앙대학교 전자전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.2, 2004 , pp. 178-183 More about this Journal
Abstract
PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.
Keywords
PZT; Samarium; Ferroelectric; Dielectric; Sol-gel; Fatigue;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 /
[ Y.Xu ] / Ferroelectric materials and their applications
2 Microstructural characterization of donordoped lead zirconate titanate films prepared by sol-gel processing /
[ Q.Zou;H.Ruda;B.G.Yacobi;M.Farrell ] / Thin Solid Films   DOI   ScienceOn
3 Characteristic change due to poliarization fatigue of sol-gel ferroelectric Pb(<TEX>$Zr_{0.4}Ti_{0.6}$</TEX>)O₃thin-film capacitors /
[ T.Mihara;H.Watanabe;C.A. Paz de Araujo ] / Jpn. J. Appl. Phys.   DOI
4 MOD 법으로 제작된 <TEX>$Si_{3.25}La_{0.75}Ti_3O_{12}$</TEX> 박막의 강유전 특성 /
[ 김경태;김창일;권지운;심일운 ] / 전기전자재료학회논문지   과학기술학회마을   DOI   ScienceOn
5 Sol-Gel 법에 의한 강유전체 Pb(Zr,Ti)O₃의 제조 및 특성에 관한 연구 /
[ 임정한;김영식;장복기 ] / 전기전자재료학회논문지   과학기술학회마을
6 Characterization of secondary phases in lead zirconate titanate film surface deposited with excess lead content /
[ G.S.Park;I.S.Chung ] / Jpn. J. Appl. Phys.   DOI
7 강유전체 박막의 제조기술 및 응용 /
[ 최준후;이승석;김호기 ] / 전기전자재료학회논문지   과학기술학회마을
8 Effect of Er doping on structural and dielectric properties of sol-gel prepared PZT ceramics /
[ S.R.Shannigrahi;R.N.P.Choudhary;H.N.Acharya ] / Mat. Res. Bulletin   DOI   ScienceOn
9 Polarization fatigue characteristics of sol-gel ferroelectric Pb(<TEX>$Zr_{0.4}Ti_{0.6}$</TEX>)O₃thin film capacitors /
[ T.Mihara;H.Watanabe;C.A. Paz de Araujo ] / Jpn. J. Appl. Phys.   DOI
10 /
[ J.F.Scott ] / Ferroelectric memories
11 Effects of strontium substitution in Nb-doped PZT ceramics /
[ H.Zheng;I.M.Reaney;W.E.Lee;N.Jones;H.Thomas ] / J. Euro. Cer. Soc.   DOI   ScienceOn
12 Effect of neodymium (Nd) doping on the dielectric and ferrodelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films /
[ S.B.Majumder;B.Roy;R.S.Katiyar ] / J. Appl. Phys.   DOI   ScienceOn