• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• International Journal of Industrial Entomology and Biomaterials
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• v.44 no.1
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• pp.21-27
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• 2022

Different parts of the mulberry plant are described to be potential sources of polyphenolics exhibiting strong antioxidant activity. In this study, we prepared various aqueous extracts of mulberry root bark by subjecting to steam at different temperatures and time intervals (45℃, 15 h; 70℃, 15 h; 95℃, 6 h and 95℃, 15 h) followed by extracting at 80℃ for 1 h. The total polyphenolic content ranged from 66.82-101.20 mg gallic acid equivalent (GE)/g of extract whereas the flavonoids were in the range of 13.03-25.23 mg catechin equivalent (CE)/g of extract. The extracts also exhibited strong antioxidant activities (0.99-1.66 mg trolox equivalent (TE)/g of extract in DDPH assay and 10.65-16.26 mg TE/g of extract in ABTS assay). This study clearly showed an improvement in the antioxidant activity of the water extract of mulberry root bark by the steam treatment, which can be used as a tea or health-promoting materials.

• Journal of the Korean Society of Radiology
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• v.13 no.7
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• pp.1025-1033
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• 2019

Although magnetic resonance imaging without linear hardening of CT is recognized as a method of obtaining high contrast of tissue and excellent resolution image in brain disease and head and neck examination, magnetic susceptibility artifact is generated in case of metal implants in the oral cavity, which is an obstacle to image diagnosis. Therefore, an effort was made in this thesis to find a method to reduce artifacts caused by dental implants and prosthesis in MRI. Implant-induced artifacts in magnetic resonance imaging showed that the signal size increased with shorter TE in GE technique and was inconsistent with water temperature change. In SE technique as well, the signal size of water was generally higher than that of air, but the signal to noise ratio (SNR) was not different by air and temperature. In EPI technique, images with fewer artifacts were obtained quantitatively and qualitatively when there was more water than air, and the signal to noise ratio was measured the highest, especially at water temperatures of 20° and 30°. In conclusion, when examining using the EPI technique rather than the SE or the GE technique, obtaining brain diffusion using a 20° and 30° water bag reduces the magnetic susceptibility artifacts caused by implants and prosthesis, suggesting that it may provide images with high diagnostic value.

• Journal of radiological science and technology
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• v.41 no.2
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• pp.109-113
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• 2018

Despite the continuous development of software, it is continuously pursued to enlarge the examination area of FOV in order to reduce the factors of inconsistency in images that appear in continuous examination during wide area examination using contrast agent such as whole body angiography. In this study, we investigated the optimal FOV by comparing the SNR values according to the changes of FOV. The change of the FOV was gradually changed to $270{\times}200$, $300{\times}223$, $330{\times}244$, $360{\times}266$ and $380{\times}281$. SE images at TR 450 msec and TE 10 msec, FSE images at TR 2,000 msec, TE 80 msec, and GE images were scanned at TR 117 msec, and TE 16 msec. SNR values were calculated from the mean values of signal intensities of five phantom images and the signal intensity values of four background standard deviations. As a result of the study, the signal intensity and the SNR value according to the change of the FOV value gradually increased as the FOV was increased, but it was found that the SNR value decreased at a constant size. In conclusion, the results are different from previous studies that the SNR increases as the FOV increases. The cause of these results could not be confirmed. However methods that can be imaged and included within the effective FOV should be considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.29-29
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• 2001

열전재료는 열전현상을 가지고 있어 열전발전과 열선냉각이 가능하기 때분에 해저용, 우주용, 군사용의 특수 전원으로 이미 실용화되어있고, 반도체, 레이저 다이오드, 적외선 검출소자 등의 냉각기로 쓰여지고 있어 많은 연구자들이 이들 재료에 대한 연구에 관을 갖고 열전특성을 향상시키기 위하여 많은 연구를 진행하고 있다 이들 열전재료는 사용 온도구역에 따라 3종류로 구분하고 있으며, 실온부근의 저온 영역(20$0^{\circ}C$)이하에서는 $Bi_2Te_3$계 재료, 중온영역(20$0^{\circ}C$~50$0^{\circ}C$)에서sms (Pb,Ge) Te계 재료, 고온영역(50$0^{\circ}C$~lOoo$^{\circ}C$)에서는 Si-Ge계 Fe Si계 재료가 이용되고 있다. 본 연구에서는 실온에서 성능지수가 높은 Bi_2(Te,Se)_3$에 대한 연구를 진행하였다. Bi_2(Te,Se)_3$계 열전재료는 기존의 공법인 Zone melting법을 이용하는 경우 성능지수가 높으나, 단위정이 Rhombohedral 구조파 기저면(basal plane)에 벽개성이 있는 관계로 재료의 적지 않은 손실과 가공상의 어려움이 있다. 또한 사료전체에 걸쳐 화학적으로 균질한 고용체를 얻는 것도 어려운 문제점으보 부각되고 있디 따라서 이와같은 문제점을 보완하기 위하여 용질원자의 편석감소, 고용도의 증가, 균일 고용체 형성, 결정립의 미세화등의 장점이 있는 급속응고법을 본 연구에 응용하였다. 본 연구에서는 위에서와 같은 급속응고의 장점과 대량 가공이 능늪한 연간압출공정을 이용하여 제조된 분말을 성형화 하였다. 특히 열간압출 가공에 있어서 압축다이 각 변화는 재료의 소성유동에 매우 중요한 역하을 하게되며, 이와 갇은 소성유동은 본 재료의 열전특성에 중요한 영향을 미치는 C 면 배양에 중요한 역할을 한 것으 로 기대된다. 이에 본 연구에서는 압출다이 각도 변화에 따른 미세조직변화와 이들 조직이 강도와 열전특성에 미치는 영향을 석하고자 한다. 압출재의 미세조직은 XRD(X Ray Diffraction), SEM(Scanning Electron Microscopy)으로 분석하였으며, 열전특성인 Seebeck계수($\alpha$)와 전기비저항( $\rho$ )은 열전측정장치로, 기계적 강도는 MTS장비를 이용하여 이루어졌다. 또한 압축다이각도 변화에 따른 결정방위 해석은 모노크로미터가 장착된 X RD장비감 이용하여 분석되었다.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.368-371
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• 1988

The MS diodes made by evarporating In, Au/Ge on the p-GaP substrates, and the p-n diode made by diffusing Te in the p-GaP were fabricated, and its electric-optical characteristics were surveyed. The maximum peak of E.L spectrum was shifted towards the longer wavelengths with increasing temperature, and its intensity increased with in-creasing of current. The MS diodes were fabricated rather easily and is electric-optical characteristics was as good as that of p-n diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• Current Optics and Photonics
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• v.1 no.3
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• pp.239-246
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• 2017

A compact plasmonic switching scheme, based on the phase change of a thin-film chalcogenide material ($Ge_2Sb_2Te_5$), is proposed and numerically investigated at optical-communication wavelengths. Surface plasmon polariton modal analysis is conducted for various thicknesses of dielectric and phase-change material layers, and the optimized condition is induced by finding the region of interest that shows a high extinction ratio of surface plasmon polariton modes before and after the phase transition. Full electromagnetic simulations show that multiple reflections inside the active region may conditionally increase the overall efficiency of the on/off ratio at a specific length of the active region. However, it is shown that the optimized geometrical condition, which shows generally large on/off ratio for any length of active region, can be distinguished by observing the multiple-reflection characteristic inside the active region. The proposed scheme shows an on/off switching ratio greater than 30 dB for a length of a few micrometers, which can be potentially applied to integrated active plasmonic systems.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.110-110
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• 2009

최근 차세대 비휘발성 메모리(NVM) 기술은 메모리의 성능과 기존의 한계점을 효과적으로 극복하며 활발한 연구를 통해 비약적으로 발전하고 있으며 특히, phase-change random access memory (PRAM)은 ferroelectric random access memory (FeRAM)과 magneto-resistive random access memory (MRAM)과 같은 다른 NVM 소자와 비교하여 기존의 DRAM과 구조적으로 비슷하고 상용화가 빠르게 진행될 수 있을 것으로 예상되는 바, PRAM에 사용되는 상변화 물질의 식각을 수행하고 X-ray photoelectron spectroscopy (XPS)를 통해 표면의 열화현상을 관찰하였다.