• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.450.2-450.2
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• 2014

열전재료는 열-전기가 상호 가역적으로 변하는 재료로서, 최근 에너지 변환소재 분야에서 각광받고 있다. 열전재료의 특성 효율은 무차원 열전 성능지수(dimensionless figure of merit, $ZT={\alpha}2{\sigma}T/{\kappa}$)로 나타낼 수 있다. 여기서 ${\alpha}$는 제벡계수(Seebeck coefficient), ${\sigma}$는 전기전도도(electrical conductivity), ${\kappa}$는 열전도도(thermal conductivity), T는 Kelvin 온도를 나타낸다. 500 K에서 800 K까지의 중온 영역에서 우수한 열전특성을 보이는 $Mg_2X$ (X=Si, Ge, Sn)와 이들의 고용체는 성분원소가 독성이 없고, 매장량이 많아 친환경 열전 재료로 각광받고 있다. $Mg_2X$ 고용체 중 $Mg_2Si_{1-x}Ge_x$는 기존 $Mn_2Si$, $Mg_2Ge$, $Mg_2Sn$계 보다 더 우수한 열전 성능지수를 보인다. 다양한 제조 방법들이 시도되고 있으나, 조성설계 및 구조, 성능 조절의 어려움이 있고, Mg의 산화와 휘발 및 Mg, Si, Ge의 융점 차이가 크고 중력 편석과 반응하지 않은 원소들로 인해 제조가 상당히 어렵다. Sb가 도핑된 $Mg_2Si_{0.5}Ge_{0.5}Sb_y$ (y=0, 0.005, 0.01, 0.02, 0.03) 고용체를 고상반응으로 합성하고 진공열간 압축성형을 통해 성공적으로 제조하였다. 고용 상을 확인하기 위하여 X선 회절분석을 실시하였고, 고용체 형성과 도핑에 따른 전기적 특성변화를 평가하기 위해 Hall 효과를 측정하여 전자 이동특성을 분석하였고, 323~823 K까지 전기전도도, 제벡계수, 열전도도의 측정을 통해 열전 성능지수를 평가하였다.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1370-1376
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• 2018

The electronic structures, magnetic properties and half-metallicity in $Zr_2RuZ$ (Z = Ga, In, Tl, Ge, Sn, and Pb) alloys with $AlCu_2Mn-$ and $CuHg_2Ti$-type structures were investigated using first-principles density functional theory (DFT) calculations. The calculations showed that $Zr_2RuIn$, $Zr_2RuTl$, $Zr_2RuSn$, and $Zr_2RuPb$ compounds with $CuHg_2Ti$-type structures were half-metallic ferromagnets with half-metallic band gaps of 0.18, 0.24, 0.22, and 0.27 eV, respectively. The half-metallicity originated from d-d and covalent hybridizations between the transition metals Zr and Ru. The total magnetic moments of the $Zr_2RuZ$ (Z = In, Tl, Sn, and Pb) compounds with $CuHg_2Ti$-type structures were integer values of $1{\mu}B$ and $2{\mu}B$, which is in agreement with Slater-Pauling rule ($M_{tot}=Z_{tot}-18$). Among these compounds, $Zr_2RuIn$ and $Zr_2RuTl$ were half-metals over relatively wide regions of the lattice constants, indicating that these two new Heusler alloys are ideal candidates for use in spintronic devices.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.1-7
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• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.832-836
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• 2003

To extend the knowledge of triple bonding between group 6 transition metal and heavier group 14 elements, the structural and bonding aspects of ($η^5-C_5H_5$)$(CO)_2$M≡ER (M = Cr, Mo, W; E = Si, Ge, Sn, Pb) are investigated by hybrid density functional calculations at the B3PW91 level. Substituent effects are also investigated with R = H, Me, $SiH_3$, Ph, $C_6H_3-2,6-Ph_2$, $C_6H_3-2,6-(C_6H_2-2,4,6-Me_3)_2$, and $C_6H_3-2,6-(C_6H_2-2,4,6- iPr_3)_2$.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.71-71
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• 2009

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.114-114
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.661-661
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• 2013

열전재료는 열-전기가 상호 가역적으로 변하는 재료로서, 에너지 변환소재 분야에서 널리 각광받고 있다. 열전재료의 성능은 무차원 열전성능지수(dimensionless figure of merit, $ZT={\alpha}^2{\sigma}T/{\kappa}$)로 평가된다. 여기서 ${\alpha}$는 제벡계수(Seebeck coefficient), ${\sigma}$는 전기전도도(electrical conductivity), ${\kappa}$는 열전도도(thermal conductivity), T는 Kelvin 온도를 나타낸다. 500 K에서 800 K까지의 중온 영역에서 우수한 열전특성을 보이는 $Mg_2X$ (X=Si, Ge, Sn)와 이들의 고용체는 성분원소가 독성이 없고, 매장량이 많아 친환경 열전재료로 각광받고 있다. $Mg_2X$ 고용체 중 $Mg_2Si-Mg_2Sn$ 고용체는 Si와 Sn의 큰 원자량 차이로 인해 낮은 열전도도와 높은 성능지수(ZT)를 얻을 것이라 예상되며 열전발전 소자로서의 응용이 기대된다. Sb가 도핑된 $Mg_{2+x}Si_{0.7}Sn_{0.3}Sb_y$ (x=0, 0.1, 0.2, y=0, 0.01) 고용체를 고상합성과 기계적 합금화로 합성한 후, 진공 열간압축 성형을 통해 성공적으로 제조하였다. X선 회절분석으로 상합성과 고용체 형성 여부를 확인하였고, Mg의 과잉첨가와 Sb 도핑에 따른 열전특성의 변화를 조사하였다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.831-832
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• 2006

Solid-state processing via the bulk mechanical alloying enables us to directly fabricate $Mg_2X$ semi-conductive material performs. Precise control of chemical composition leads to investigation on the dilution and enrichment of X in $Mg_2X$. Two types of solid-state reactivity are introduced: e.g. synthesis of $Mg_2Si$ from elemental mixture Mg-Si is nucleation-controlled process while synthesis of $Mg_2Sn$ from Mg-Sn, diffusion-controlled process. Thermoelectricity of these $Mg_2X$ is evaluated for discussion on the validity and effectiveness of this new PM route as a reliable tool for fabrication of thermoelectric compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]